VO2 thin film based highly responsive and fast VIS/IR photodetector
The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition tech...
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| Autor*in: |
Umar, Z.A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving - Lu, Li ELSEVIER, 2020, including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science, New York, NY [u.a.] |
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| Übergeordnetes Werk: |
volume:290 ; year:2022 ; day:15 ; month:10 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.matchemphys.2022.126655 |
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ELV058751467 |
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| 245 | 1 | 0 | |a VO2 thin film based highly responsive and fast VIS/IR photodetector |
| 264 | 1 | |c 2022transfer abstract | |
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| 520 | |a The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. | ||
| 520 | |a The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. | ||
| 650 | 7 | |a VO2 (M1) thin film |2 Elsevier | |
| 650 | 7 | |a Semiconductor to metal transition |2 Elsevier | |
| 650 | 7 | |a Surface morphology |2 Elsevier | |
| 650 | 7 | |a Pulsed laser deposition |2 Elsevier | |
| 650 | 7 | |a Raman spectroscopy |2 Elsevier | |
| 650 | 7 | |a Photo-detection |2 Elsevier | |
| 700 | 1 | |a Ahmed, R. |4 oth | |
| 700 | 1 | |a Asghar, H. |4 oth | |
| 700 | 1 | |a Liaqat, U. |4 oth | |
| 700 | 1 | |a Fayyaz, A. |4 oth | |
| 700 | 1 | |a Baig, M.A. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Lu, Li ELSEVIER |t Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving |d 2020 |d including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science |g New York, NY [u.a.] |w (DE-627)ELV005250781 |
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10.1016/j.matchemphys.2022.126655 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001885.pica (DE-627)ELV058751467 (ELSEVIER)S0254-0584(22)00961-0 DE-627 ger DE-627 rakwb eng 610 VZ 44.38 bkl 44.91 bkl Umar, Z.A. verfasserin aut VO2 thin film based highly responsive and fast VIS/IR photodetector 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. VO2 (M1) thin film Elsevier Semiconductor to metal transition Elsevier Surface morphology Elsevier Pulsed laser deposition Elsevier Raman spectroscopy Elsevier Photo-detection Elsevier Ahmed, R. oth Asghar, H. oth Liaqat, U. oth Fayyaz, A. oth Baig, M.A. oth Enthalten in Elsevier Lu, Li ELSEVIER Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving 2020 including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science New York, NY [u.a.] (DE-627)ELV005250781 volume:290 year:2022 day:15 month:10 pages:0 https://doi.org/10.1016/j.matchemphys.2022.126655 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.38 Pharmakologie VZ 44.91 Psychiatrie Psychopathologie VZ AR 290 2022 15 1015 0 |
| spelling |
10.1016/j.matchemphys.2022.126655 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001885.pica (DE-627)ELV058751467 (ELSEVIER)S0254-0584(22)00961-0 DE-627 ger DE-627 rakwb eng 610 VZ 44.38 bkl 44.91 bkl Umar, Z.A. verfasserin aut VO2 thin film based highly responsive and fast VIS/IR photodetector 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. VO2 (M1) thin film Elsevier Semiconductor to metal transition Elsevier Surface morphology Elsevier Pulsed laser deposition Elsevier Raman spectroscopy Elsevier Photo-detection Elsevier Ahmed, R. oth Asghar, H. oth Liaqat, U. oth Fayyaz, A. oth Baig, M.A. oth Enthalten in Elsevier Lu, Li ELSEVIER Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving 2020 including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science New York, NY [u.a.] (DE-627)ELV005250781 volume:290 year:2022 day:15 month:10 pages:0 https://doi.org/10.1016/j.matchemphys.2022.126655 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.38 Pharmakologie VZ 44.91 Psychiatrie Psychopathologie VZ AR 290 2022 15 1015 0 |
| allfields_unstemmed |
10.1016/j.matchemphys.2022.126655 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001885.pica (DE-627)ELV058751467 (ELSEVIER)S0254-0584(22)00961-0 DE-627 ger DE-627 rakwb eng 610 VZ 44.38 bkl 44.91 bkl Umar, Z.A. verfasserin aut VO2 thin film based highly responsive and fast VIS/IR photodetector 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. VO2 (M1) thin film Elsevier Semiconductor to metal transition Elsevier Surface morphology Elsevier Pulsed laser deposition Elsevier Raman spectroscopy Elsevier Photo-detection Elsevier Ahmed, R. oth Asghar, H. oth Liaqat, U. oth Fayyaz, A. oth Baig, M.A. oth Enthalten in Elsevier Lu, Li ELSEVIER Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving 2020 including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science New York, NY [u.a.] (DE-627)ELV005250781 volume:290 year:2022 day:15 month:10 pages:0 https://doi.org/10.1016/j.matchemphys.2022.126655 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.38 Pharmakologie VZ 44.91 Psychiatrie Psychopathologie VZ AR 290 2022 15 1015 0 |
| allfieldsGer |
10.1016/j.matchemphys.2022.126655 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001885.pica (DE-627)ELV058751467 (ELSEVIER)S0254-0584(22)00961-0 DE-627 ger DE-627 rakwb eng 610 VZ 44.38 bkl 44.91 bkl Umar, Z.A. verfasserin aut VO2 thin film based highly responsive and fast VIS/IR photodetector 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. VO2 (M1) thin film Elsevier Semiconductor to metal transition Elsevier Surface morphology Elsevier Pulsed laser deposition Elsevier Raman spectroscopy Elsevier Photo-detection Elsevier Ahmed, R. oth Asghar, H. oth Liaqat, U. oth Fayyaz, A. oth Baig, M.A. oth Enthalten in Elsevier Lu, Li ELSEVIER Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving 2020 including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science New York, NY [u.a.] (DE-627)ELV005250781 volume:290 year:2022 day:15 month:10 pages:0 https://doi.org/10.1016/j.matchemphys.2022.126655 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.38 Pharmakologie VZ 44.91 Psychiatrie Psychopathologie VZ AR 290 2022 15 1015 0 |
| allfieldsSound |
10.1016/j.matchemphys.2022.126655 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001885.pica (DE-627)ELV058751467 (ELSEVIER)S0254-0584(22)00961-0 DE-627 ger DE-627 rakwb eng 610 VZ 44.38 bkl 44.91 bkl Umar, Z.A. verfasserin aut VO2 thin film based highly responsive and fast VIS/IR photodetector 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. VO2 (M1) thin film Elsevier Semiconductor to metal transition Elsevier Surface morphology Elsevier Pulsed laser deposition Elsevier Raman spectroscopy Elsevier Photo-detection Elsevier Ahmed, R. oth Asghar, H. oth Liaqat, U. oth Fayyaz, A. oth Baig, M.A. oth Enthalten in Elsevier Lu, Li ELSEVIER Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving 2020 including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science New York, NY [u.a.] (DE-627)ELV005250781 volume:290 year:2022 day:15 month:10 pages:0 https://doi.org/10.1016/j.matchemphys.2022.126655 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.38 Pharmakologie VZ 44.91 Psychiatrie Psychopathologie VZ AR 290 2022 15 1015 0 |
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The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. |
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The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. |
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The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV058751467</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626051522.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">221103s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.matchemphys.2022.126655</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001885.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV058751467</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0254-0584(22)00961-0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.38</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.91</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Umar, Z.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">VO2 thin film based highly responsive and fast VIS/IR photodetector</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022transfer abstract</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The VO2 (M1) thin film has attracted significant attention due to its abrupt semiconductor to metal transition (SMT) near room temperature and diverse optoelectronic applications. In this work, pure VO2 (M1) phase thin film has been grown on the silicon substrate using a pulsed laser deposition technique. The Raman spectroscopy results confirmed the deposition of pure VO2 (M1) phase thin film. The X-ray photoelectron spectroscopy (XPS) showed that the deposited vanadium oxide thin film is mainly composed of VO2. The field emission scanning electron microscopy (FESEM) showed a smooth, continuous, and well-covered surface morphology. The elemental composition analysis of the deposited thin film using energy-dispersive X-ray spectroscopy (EDX) exhibited the presence of V and O in the deposited thin film. The VO2 (M1) thin-film device with a simple planar structure displayed resistance change of more than two orders of magnitude with increasing and decreasing temperature displaying a sharp semiconductor to metal transition (SMT) behavior with a transition width of ∼10 °C and transition temperature of ∼67 °C; a property associated with VO2 (M1). The photo-detection results of the VO2 (M1) based device revealed a better response upon illumination with 650 nm light at 0.15 mW/cm2 compared to 980 nm light at 0.34 mW/cm2. The rise time (tr) and fall time (tf) of ∼1.57 and ∼1.64 ms were achieved upon illumination with 650 nm light at 0.15 mW/cm2 while ∼1.67 and ∼4.12 ms upon illumination with 980 nm light at 0.34 mW/cm2. The photo-responsivity has been measured as ∼353 mA/W and ∼78 mA/W for 650 nm and 980 nm light, respectively. The response time and responsivity of the phase pure VO2 (M1) thin film for the Visible and IR light has been significantly improved compared to the earlier reported vanadium dioxide thin films based photodetectors.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">VO2 (M1) thin film</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductor to metal transition</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Surface morphology</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Pulsed laser deposition</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Raman spectroscopy</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Photo-detection</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ahmed, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Asghar, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liaqat, U.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fayyaz, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Baig, M.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="a">Lu, Li ELSEVIER</subfield><subfield code="t">Road traffic crash characteristics of drivers who take prescription medicines that carry a risk to driving</subfield><subfield code="d">2020</subfield><subfield code="d">including materials science communications : an international, interdisciplinary journal on science characterization and processing of advanced materials : the international journal of the Chinese Society for Materials Science</subfield><subfield code="g">New York, NY [u.a.]</subfield><subfield code="w">(DE-627)ELV005250781</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:290</subfield><subfield code="g">year:2022</subfield><subfield code="g">day:15</subfield><subfield code="g">month:10</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.matchemphys.2022.126655</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.38</subfield><subfield code="j">Pharmakologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.91</subfield><subfield code="j">Psychiatrie</subfield><subfield code="j">Psychopathologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">290</subfield><subfield code="j">2022</subfield><subfield code="b">15</subfield><subfield code="c">1015</subfield><subfield code="h">0</subfield></datafield></record></collection>
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