Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application
• The plasma power effect on Si-rich PECVD SiO x N y :H electronic structure is studied. • An increase in plasma generator power leads to a decrease in the content of Si and O. • The a-Si/SiO x N y interface energy diagram is constructed within DFT simulation. • The studied films are suitable for th...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Perevalov, T.V. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Übergeordnetes Werk: |
Enthalten in: Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms - Schweiger, G. ELSEVIER, 2019, a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:598 ; year:2022 ; day:15 ; month:12 ; pages:0 |
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| DOI / URN: |
10.1016/j.jnoncrysol.2022.121925 |
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| 520 | |a • The plasma power effect on Si-rich PECVD SiO x N y :H electronic structure is studied. • An increase in plasma generator power leads to a decrease in the content of Si and O. • The a-Si/SiO x N y interface energy diagram is constructed within DFT simulation. • The studied films are suitable for the use as active medium of a forming-free RRAM. | ||
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electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application |
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Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application |
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• The plasma power effect on Si-rich PECVD SiO x N y :H electronic structure is studied. • An increase in plasma generator power leads to a decrease in the content of Si and O. • The a-Si/SiO x N y interface energy diagram is constructed within DFT simulation. • The studied films are suitable for the use as active medium of a forming-free RRAM. |
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• The plasma power effect on Si-rich PECVD SiO x N y :H electronic structure is studied. • An increase in plasma generator power leads to a decrease in the content of Si and O. • The a-Si/SiO x N y interface energy diagram is constructed within DFT simulation. • The studied films are suitable for the use as active medium of a forming-free RRAM. |
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• The plasma power effect on Si-rich PECVD SiO x N y :H electronic structure is studied. • An increase in plasma generator power leads to a decrease in the content of Si and O. • The a-Si/SiO x N y interface energy diagram is constructed within DFT simulation. • The studied films are suitable for the use as active medium of a forming-free RRAM. |
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Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application |
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Volodin, V.A. Kamaev, G.N. Gismatulin, A.A. Cherkova, S.G. Prosvirin, I.P. Astankova, K.N. Gritsenko, V.A. |
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Volodin, V.A. Kamaev, G.N. Gismatulin, A.A. Cherkova, S.G. Prosvirin, I.P. Astankova, K.N. Gritsenko, V.A. |
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| doi_str |
10.1016/j.jnoncrysol.2022.121925 |
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2024-07-06T21:21:07.360Z |
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