Interactions between aluminium and fired passivating contacts during fire-through metallization
Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achi...
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| Autor*in: |
Libraro, S. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers - Kim, Yohan ELSEVIER, 2021, an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:249 ; year:2023 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.solmat.2022.112051 |
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| 520 | |a Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. | ||
| 520 | |a Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. | ||
| 700 | 1 | |a Lehmann, M. |4 oth | |
| 700 | 1 | |a Leon, J.J. Diaz |4 oth | |
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| 700 | 1 | |a Ballif, C. |4 oth | |
| 700 | 1 | |a Hessler-Wyser, A. |4 oth | |
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10.1016/j.solmat.2022.112051 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001946.pica (DE-627)ELV059348003 (ELSEVIER)S0927-0248(22)00468-8 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Libraro, S. verfasserin aut Interactions between aluminium and fired passivating contacts during fire-through metallization 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Lehmann, M. oth Leon, J.J. Diaz oth Allebé, C. oth Descoeudres, A. oth Ingenito, A. oth Ballif, C. oth Hessler-Wyser, A. oth Haug, F.-J. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:249 year:2023 pages:0 https://doi.org/10.1016/j.solmat.2022.112051 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 249 2023 0 |
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10.1016/j.solmat.2022.112051 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001946.pica (DE-627)ELV059348003 (ELSEVIER)S0927-0248(22)00468-8 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Libraro, S. verfasserin aut Interactions between aluminium and fired passivating contacts during fire-through metallization 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Lehmann, M. oth Leon, J.J. Diaz oth Allebé, C. oth Descoeudres, A. oth Ingenito, A. oth Ballif, C. oth Hessler-Wyser, A. oth Haug, F.-J. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:249 year:2023 pages:0 https://doi.org/10.1016/j.solmat.2022.112051 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 249 2023 0 |
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10.1016/j.solmat.2022.112051 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001946.pica (DE-627)ELV059348003 (ELSEVIER)S0927-0248(22)00468-8 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Libraro, S. verfasserin aut Interactions between aluminium and fired passivating contacts during fire-through metallization 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Lehmann, M. oth Leon, J.J. Diaz oth Allebé, C. oth Descoeudres, A. oth Ingenito, A. oth Ballif, C. oth Hessler-Wyser, A. oth Haug, F.-J. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:249 year:2023 pages:0 https://doi.org/10.1016/j.solmat.2022.112051 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 249 2023 0 |
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10.1016/j.solmat.2022.112051 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001946.pica (DE-627)ELV059348003 (ELSEVIER)S0927-0248(22)00468-8 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Libraro, S. verfasserin aut Interactions between aluminium and fired passivating contacts during fire-through metallization 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Lehmann, M. oth Leon, J.J. Diaz oth Allebé, C. oth Descoeudres, A. oth Ingenito, A. oth Ballif, C. oth Hessler-Wyser, A. oth Haug, F.-J. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:249 year:2023 pages:0 https://doi.org/10.1016/j.solmat.2022.112051 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 249 2023 0 |
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10.1016/j.solmat.2022.112051 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001946.pica (DE-627)ELV059348003 (ELSEVIER)S0927-0248(22)00468-8 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Libraro, S. verfasserin aut Interactions between aluminium and fired passivating contacts during fire-through metallization 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. Lehmann, M. oth Leon, J.J. Diaz oth Allebé, C. oth Descoeudres, A. oth Ingenito, A. oth Ballif, C. oth Hessler-Wyser, A. oth Haug, F.-J. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:249 year:2023 pages:0 https://doi.org/10.1016/j.solmat.2022.112051 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 249 2023 0 |
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Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. |
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Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. |
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Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiNx:H, SiCx(p) and tunnel SiOx) are studied. We discuss how Al and SiNx react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiOx/SiCx stack to allow for Ag-free metallization of tunnel oxide passivating contacts. |
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