Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors
In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics suc...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, Hee Jun [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2023transfer abstract |
|---|
| Schlagwörter: |
|---|
| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:153 ; year:2023 ; pages:0 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.mssp.2022.107183 |
|---|
| Katalog-ID: |
ELV059430621 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV059430621 | ||
| 003 | DE-627 | ||
| 005 | 20230626052903.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 221219s2023 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.mssp.2022.107183 |2 doi | |
| 028 | 5 | 2 | |a /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica |
| 035 | |a (DE-627)ELV059430621 | ||
| 035 | |a (ELSEVIER)S1369-8001(22)00709-0 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 690 |q VZ |
| 084 | |a 56.45 |2 bkl | ||
| 100 | 1 | |a Lee, Hee Jun |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors |
| 264 | 1 | |c 2023transfer abstract | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. | ||
| 520 | |a In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. | ||
| 650 | 7 | |a Neuromorphic system |2 Elsevier | |
| 650 | 7 | |a Indium gallium zinc oxide |2 Elsevier | |
| 650 | 7 | |a Neuromorphic simulation |2 Elsevier | |
| 650 | 7 | |a Memristor |2 Elsevier | |
| 650 | 7 | |a Synaptic device |2 Elsevier | |
| 700 | 1 | |a Kim, Donguk |4 oth | |
| 700 | 1 | |a Choi, Woo Sik |4 oth | |
| 700 | 1 | |a Kim, Changwook |4 oth | |
| 700 | 1 | |a Choi, Sung-Jin |4 oth | |
| 700 | 1 | |a Bae, Jong-Ho |4 oth | |
| 700 | 1 | |a Kim, Dong Myong |4 oth | |
| 700 | 1 | |a Kim, Sungjun |4 oth | |
| 700 | 1 | |a Kim, Dae Hwan |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Narattha, Chalermphan ELSEVIER |t Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |d 2022 |g Amsterdam [u.a.] |w (DE-627)ELV007709056 |
| 773 | 1 | 8 | |g volume:153 |g year:2023 |g pages:0 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.mssp.2022.107183 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 936 | b | k | |a 56.45 |j Baustoffkunde |q VZ |
| 951 | |a AR | ||
| 952 | |d 153 |j 2023 |h 0 | ||
| author_variant |
h j l hj hjl |
|---|---|
| matchkey_str |
leeheejunkimdongukchoiwoosikkimchangwook:2023----:fetfxgnlwaenogemnsotemcotyaremdlto |
| hierarchy_sort_str |
2023transfer abstract |
| bklnumber |
56.45 |
| publishDate |
2023 |
| allfields |
10.1016/j.mssp.2022.107183 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica (DE-627)ELV059430621 (ELSEVIER)S1369-8001(22)00709-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Lee, Hee Jun verfasserin aut Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Elsevier Kim, Donguk oth Choi, Woo Sik oth Kim, Changwook oth Choi, Sung-Jin oth Bae, Jong-Ho oth Kim, Dong Myong oth Kim, Sungjun oth Kim, Dae Hwan oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:153 year:2023 pages:0 https://doi.org/10.1016/j.mssp.2022.107183 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 153 2023 0 |
| spelling |
10.1016/j.mssp.2022.107183 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica (DE-627)ELV059430621 (ELSEVIER)S1369-8001(22)00709-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Lee, Hee Jun verfasserin aut Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Elsevier Kim, Donguk oth Choi, Woo Sik oth Kim, Changwook oth Choi, Sung-Jin oth Bae, Jong-Ho oth Kim, Dong Myong oth Kim, Sungjun oth Kim, Dae Hwan oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:153 year:2023 pages:0 https://doi.org/10.1016/j.mssp.2022.107183 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 153 2023 0 |
| allfields_unstemmed |
10.1016/j.mssp.2022.107183 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica (DE-627)ELV059430621 (ELSEVIER)S1369-8001(22)00709-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Lee, Hee Jun verfasserin aut Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Elsevier Kim, Donguk oth Choi, Woo Sik oth Kim, Changwook oth Choi, Sung-Jin oth Bae, Jong-Ho oth Kim, Dong Myong oth Kim, Sungjun oth Kim, Dae Hwan oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:153 year:2023 pages:0 https://doi.org/10.1016/j.mssp.2022.107183 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 153 2023 0 |
| allfieldsGer |
10.1016/j.mssp.2022.107183 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica (DE-627)ELV059430621 (ELSEVIER)S1369-8001(22)00709-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Lee, Hee Jun verfasserin aut Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Elsevier Kim, Donguk oth Choi, Woo Sik oth Kim, Changwook oth Choi, Sung-Jin oth Bae, Jong-Ho oth Kim, Dong Myong oth Kim, Sungjun oth Kim, Dae Hwan oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:153 year:2023 pages:0 https://doi.org/10.1016/j.mssp.2022.107183 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 153 2023 0 |
| allfieldsSound |
10.1016/j.mssp.2022.107183 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica (DE-627)ELV059430621 (ELSEVIER)S1369-8001(22)00709-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Lee, Hee Jun verfasserin aut Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors 2023transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Elsevier Kim, Donguk oth Choi, Woo Sik oth Kim, Changwook oth Choi, Sung-Jin oth Bae, Jong-Ho oth Kim, Dong Myong oth Kim, Sungjun oth Kim, Dae Hwan oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:153 year:2023 pages:0 https://doi.org/10.1016/j.mssp.2022.107183 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 153 2023 0 |
| language |
English |
| source |
Enthalten in Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate Amsterdam [u.a.] volume:153 year:2023 pages:0 |
| sourceStr |
Enthalten in Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate Amsterdam [u.a.] volume:153 year:2023 pages:0 |
| format_phy_str_mv |
Article |
| bklname |
Baustoffkunde |
| institution |
findex.gbv.de |
| topic_facet |
Neuromorphic system Indium gallium zinc oxide Neuromorphic simulation Memristor Synaptic device |
| dewey-raw |
690 |
| isfreeaccess_bool |
false |
| container_title |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| authorswithroles_txt_mv |
Lee, Hee Jun @@aut@@ Kim, Donguk @@oth@@ Choi, Woo Sik @@oth@@ Kim, Changwook @@oth@@ Choi, Sung-Jin @@oth@@ Bae, Jong-Ho @@oth@@ Kim, Dong Myong @@oth@@ Kim, Sungjun @@oth@@ Kim, Dae Hwan @@oth@@ |
| publishDateDaySort_date |
2023-01-01T00:00:00Z |
| hierarchy_top_id |
ELV007709056 |
| dewey-sort |
3690 |
| id |
ELV059430621 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV059430621</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626052903.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">221219s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.mssp.2022.107183</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV059430621</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1369-8001(22)00709-0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">690</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">56.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, Hee Jun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023transfer abstract</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Neuromorphic system</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Indium gallium zinc oxide</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Neuromorphic simulation</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Memristor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Synaptic device</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Donguk</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Choi, Woo Sik</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Changwook</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Choi, Sung-Jin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bae, Jong-Ho</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Dong Myong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Sungjun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Dae Hwan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Narattha, Chalermphan ELSEVIER</subfield><subfield code="t">Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate</subfield><subfield code="d">2022</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV007709056</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:153</subfield><subfield code="g">year:2023</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.mssp.2022.107183</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">56.45</subfield><subfield code="j">Baustoffkunde</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">153</subfield><subfield code="j">2023</subfield><subfield code="h">0</subfield></datafield></record></collection>
|
| author |
Lee, Hee Jun |
| spellingShingle |
Lee, Hee Jun ddc 690 bkl 56.45 Elsevier Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors |
| authorStr |
Lee, Hee Jun |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV007709056 |
| format |
electronic Article |
| dewey-ones |
690 - Buildings |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
690 VZ 56.45 bkl Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device Elsevier |
| topic |
ddc 690 bkl 56.45 Elsevier Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device |
| topic_unstemmed |
ddc 690 bkl 56.45 Elsevier Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device |
| topic_browse |
ddc 690 bkl 56.45 Elsevier Neuromorphic system Elsevier Indium gallium zinc oxide Elsevier Neuromorphic simulation Elsevier Memristor Elsevier Synaptic device |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
d k dk w s c ws wsc c k ck s j c sjc j h b jhb d m k dm dmk s k sk d h k dh dhk |
| hierarchy_parent_title |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| hierarchy_parent_id |
ELV007709056 |
| dewey-tens |
690 - Building & construction |
| hierarchy_top_title |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV007709056 |
| title |
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors |
| ctrlnum |
(DE-627)ELV059430621 (ELSEVIER)S1369-8001(22)00709-0 |
| title_full |
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors |
| author_sort |
Lee, Hee Jun |
| journal |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| journalStr |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2023 |
| contenttype_str_mv |
zzz |
| container_start_page |
0 |
| author_browse |
Lee, Hee Jun |
| container_volume |
153 |
| class |
690 VZ 56.45 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Lee, Hee Jun |
| doi_str_mv |
10.1016/j.mssp.2022.107183 |
| dewey-full |
690 |
| title_sort |
effect of oxygen flow rate on long-term and short-term schottky barrier modulations in pd/igzo/sio2/p+-si memristors |
| title_auth |
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors |
| abstract |
In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. |
| abstractGer |
In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. |
| abstract_unstemmed |
In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors |
| url |
https://doi.org/10.1016/j.mssp.2022.107183 |
| remote_bool |
true |
| author2 |
Kim, Donguk Choi, Woo Sik Kim, Changwook Choi, Sung-Jin Bae, Jong-Ho Kim, Dong Myong Kim, Sungjun Kim, Dae Hwan |
| author2Str |
Kim, Donguk Choi, Woo Sik Kim, Changwook Choi, Sung-Jin Bae, Jong-Ho Kim, Dong Myong Kim, Sungjun Kim, Dae Hwan |
| ppnlink |
ELV007709056 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth oth oth |
| doi_str |
10.1016/j.mssp.2022.107183 |
| up_date |
2024-07-06T21:58:56.261Z |
| _version_ |
1803868581409062912 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV059430621</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626052903.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">221219s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.mssp.2022.107183</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001957.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV059430621</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1369-8001(22)00709-0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">690</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">56.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, Hee Jun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023transfer abstract</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we investigate the long- and short-term Schottky barrier modulations in a Pd/IGZO/SiO2/p+-Si memristor under oxygen flow rate (OFR) control. The thickness of the SiO2 layer verified using transmission electron microscopy (TEM) was found to affect resistive-switching characteristics such as the on/off ratio. A high barrier was observed corresponding to a high OFR in the thermionic emission model. In addition, we present an energy band diagram considering traps and oxygen vacancies for oxygen-rich (O-rich) and oxygen-poor (O-poor) devices. Moreover, physical parameters such as a change in barrier height, activation energy, and potentiation/depression were experimentally extracted through various pulse schemes. Experimental results reveal that an O-rich device has high accuracy with a neural network on the MNIST dataset. In this study, we optimized the resistive-switching characteristics by varying OFR as an experimental factor. Further, we provide guidelines for designing hardware-based neuromorphic systems by separating short- and long-term components.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Neuromorphic system</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Indium gallium zinc oxide</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Neuromorphic simulation</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Memristor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Synaptic device</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Donguk</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Choi, Woo Sik</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Changwook</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Choi, Sung-Jin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bae, Jong-Ho</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Dong Myong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Sungjun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Dae Hwan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Narattha, Chalermphan ELSEVIER</subfield><subfield code="t">Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate</subfield><subfield code="d">2022</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV007709056</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:153</subfield><subfield code="g">year:2023</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.mssp.2022.107183</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">56.45</subfield><subfield code="j">Baustoffkunde</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">153</subfield><subfield code="j">2023</subfield><subfield code="h">0</subfield></datafield></record></collection>
|
| score |
7.4018974 |