Study of slow magnetization relaxation in Hf/GdFeCo/SiN Hall bar by anomalous Hall resistance measurements
• Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the n...
Ausführliche Beschreibung
Autor*in: |
Bhatt, Ramesh Chandra [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2022 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Modular auditory decision-making behavioral task designed for intraoperative use in humans - Tekriwal, Anand ELSEVIER, 2018, MMM, Amsterdam |
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Übergeordnetes Werk: |
volume:564 ; year:2022 ; day:15 ; month:12 ; pages:0 |
Links: |
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DOI / URN: |
10.1016/j.jmmm.2022.170106 |
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Katalog-ID: |
ELV059801298 |
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10.1016/j.jmmm.2022.170106 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001999.pica (DE-627)ELV059801298 (ELSEVIER)S0304-8853(22)00991-X DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut Study of slow magnetization relaxation in Hf/GdFeCo/SiN Hall bar by anomalous Hall resistance measurements 2022 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. GdFeCo Elsevier Magnetization relaxation Elsevier Notched Hall bar Elsevier Anomalous Hall effect Elsevier Delayed propagation Elsevier Ye, Lin-Xiu oth Lin, Li-Ren oth Hai, Ngo Trong oth Wu, Jong-Ching oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:564 year:2022 day:15 month:12 pages:0 https://doi.org/10.1016/j.jmmm.2022.170106 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 564 2022 15 1215 0 |
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10.1016/j.jmmm.2022.170106 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001999.pica (DE-627)ELV059801298 (ELSEVIER)S0304-8853(22)00991-X DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut Study of slow magnetization relaxation in Hf/GdFeCo/SiN Hall bar by anomalous Hall resistance measurements 2022 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. GdFeCo Elsevier Magnetization relaxation Elsevier Notched Hall bar Elsevier Anomalous Hall effect Elsevier Delayed propagation Elsevier Ye, Lin-Xiu oth Lin, Li-Ren oth Hai, Ngo Trong oth Wu, Jong-Ching oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:564 year:2022 day:15 month:12 pages:0 https://doi.org/10.1016/j.jmmm.2022.170106 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 564 2022 15 1215 0 |
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10.1016/j.jmmm.2022.170106 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001999.pica (DE-627)ELV059801298 (ELSEVIER)S0304-8853(22)00991-X DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut Study of slow magnetization relaxation in Hf/GdFeCo/SiN Hall bar by anomalous Hall resistance measurements 2022 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. GdFeCo Elsevier Magnetization relaxation Elsevier Notched Hall bar Elsevier Anomalous Hall effect Elsevier Delayed propagation Elsevier Ye, Lin-Xiu oth Lin, Li-Ren oth Hai, Ngo Trong oth Wu, Jong-Ching oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:564 year:2022 day:15 month:12 pages:0 https://doi.org/10.1016/j.jmmm.2022.170106 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 564 2022 15 1215 0 |
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10.1016/j.jmmm.2022.170106 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001999.pica (DE-627)ELV059801298 (ELSEVIER)S0304-8853(22)00991-X DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut Study of slow magnetization relaxation in Hf/GdFeCo/SiN Hall bar by anomalous Hall resistance measurements 2022 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. GdFeCo Elsevier Magnetization relaxation Elsevier Notched Hall bar Elsevier Anomalous Hall effect Elsevier Delayed propagation Elsevier Ye, Lin-Xiu oth Lin, Li-Ren oth Hai, Ngo Trong oth Wu, Jong-Ching oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:564 year:2022 day:15 month:12 pages:0 https://doi.org/10.1016/j.jmmm.2022.170106 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 564 2022 15 1215 0 |
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Study of slow magnetization relaxation in Hf/GdFeCo/SiN Hall bar by anomalous Hall resistance measurements |
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• Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. |
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• Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. |
abstract_unstemmed |
• Magnetization relaxation in Hf/GdFeCo/SiN as a function of current polarity, probe widths, and notch in the device. • In notched Hall bar, the smaller HC for positive current seems due to valve-like behavior from notch. • Notch provides smaller delays for nucleation and switching compared to the no-notch Hall bar. • Narrow probe shows the advantage of comparatively faster and less stochastic switching. • Sense current is another important key to controlling the nucleation delay. |
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