To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer

Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the trans...
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Autor*in:	Sun, Feiyang [verfasserIn] Yang, Shengyi [verfasserIn] Zhang, Zhenheng [verfasserIn] Muhammad, Sulaman [verfasserIn] Ge, Zhenhua [verfasserIn] Hu, Jinming [verfasserIn] Li, Chunyang [verfasserIn] Wu, Ying [verfasserIn] Liu, Xiaoxuan [verfasserIn] Zou, Bingsuo [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer

Übergeordnetes Werk:	Enthalten in: Materials chemistry and physics - New York, NY [u.a.] : Elsevier, 1983, 306
Übergeordnetes Werk:	volume:306

DOI / URN:	10.1016/j.matchemphys.2023.128096

Katalog-ID:	ELV059963662

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100	1		\|a Sun, Feiyang \|e verfasserin \|0 (orcid)0009-0005-2003-7104 \|4 aut
245	1	0	\|a To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
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520			\|a Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface.
650		4	\|a Colloidal quantum dots
650		4	\|a Ag nanoparticles
650		4	\|a Self-driven infrared photodetectors
650		4	\|a Heterojunction interface
650		4	\|a Electron-transporting layer
700	1		\|a Yang, Shengyi \|e verfasserin \|0 (orcid)0000-0001-5038-491X \|4 aut
700	1		\|a Zhang, Zhenheng \|e verfasserin \|4 aut
700	1		\|a Muhammad, Sulaman \|e verfasserin \|4 aut
700	1		\|a Ge, Zhenhua \|e verfasserin \|4 aut
700	1		\|a Hu, Jinming \|e verfasserin \|4 aut
700	1		\|a Li, Chunyang \|e verfasserin \|4 aut
700	1		\|a Wu, Ying \|e verfasserin \|0 (orcid)0000-0002-5458-0165 \|4 aut
700	1		\|a Liu, Xiaoxuan \|e verfasserin \|4 aut
700	1		\|a Zou, Bingsuo \|e verfasserin \|4 aut
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Indexfelder

author_variant	f s fs s y sy z z zz s m sm z g zg j h jh c l cl y w yw x l xl b z bz
matchkey_str	sunfeiyangyangshengyizhangzhenhengmuhamm:2023----:omrvdvcpromnefefrvneeoucinhtdtcosynetnahnaeoslennpri
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publishDate	2023
allfields	10.1016/j.matchemphys.2023.128096 doi (DE-627)ELV059963662 (ELSEVIER)S0254-0584(23)00804-0 DE-627 ger DE-627 rda eng 540 530 VZ ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Sun, Feiyang verfasserin (orcid)0009-0005-2003-7104 aut To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface. Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer Yang, Shengyi verfasserin (orcid)0000-0001-5038-491X aut Zhang, Zhenheng verfasserin aut Muhammad, Sulaman verfasserin aut Ge, Zhenhua verfasserin aut Hu, Jinming verfasserin aut Li, Chunyang verfasserin aut Wu, Ying verfasserin (orcid)0000-0002-5458-0165 aut Liu, Xiaoxuan verfasserin aut Zou, Bingsuo verfasserin aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 306 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:306 GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ 51.00 Werkstoffkunde: Allgemeines VZ AR 306
spelling	10.1016/j.matchemphys.2023.128096 doi (DE-627)ELV059963662 (ELSEVIER)S0254-0584(23)00804-0 DE-627 ger DE-627 rda eng 540 530 VZ ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Sun, Feiyang verfasserin (orcid)0009-0005-2003-7104 aut To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface. Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer Yang, Shengyi verfasserin (orcid)0000-0001-5038-491X aut Zhang, Zhenheng verfasserin aut Muhammad, Sulaman verfasserin aut Ge, Zhenhua verfasserin aut Hu, Jinming verfasserin aut Li, Chunyang verfasserin aut Wu, Ying verfasserin (orcid)0000-0002-5458-0165 aut Liu, Xiaoxuan verfasserin aut Zou, Bingsuo verfasserin aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 306 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:306 GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ 51.00 Werkstoffkunde: Allgemeines VZ AR 306
allfields_unstemmed	10.1016/j.matchemphys.2023.128096 doi (DE-627)ELV059963662 (ELSEVIER)S0254-0584(23)00804-0 DE-627 ger DE-627 rda eng 540 530 VZ ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Sun, Feiyang verfasserin (orcid)0009-0005-2003-7104 aut To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface. Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer Yang, Shengyi verfasserin (orcid)0000-0001-5038-491X aut Zhang, Zhenheng verfasserin aut Muhammad, Sulaman verfasserin aut Ge, Zhenhua verfasserin aut Hu, Jinming verfasserin aut Li, Chunyang verfasserin aut Wu, Ying verfasserin (orcid)0000-0002-5458-0165 aut Liu, Xiaoxuan verfasserin aut Zou, Bingsuo verfasserin aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 306 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:306 GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ 51.00 Werkstoffkunde: Allgemeines VZ AR 306
allfieldsGer	10.1016/j.matchemphys.2023.128096 doi (DE-627)ELV059963662 (ELSEVIER)S0254-0584(23)00804-0 DE-627 ger DE-627 rda eng 540 530 VZ ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Sun, Feiyang verfasserin (orcid)0009-0005-2003-7104 aut To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface. Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer Yang, Shengyi verfasserin (orcid)0000-0001-5038-491X aut Zhang, Zhenheng verfasserin aut Muhammad, Sulaman verfasserin aut Ge, Zhenhua verfasserin aut Hu, Jinming verfasserin aut Li, Chunyang verfasserin aut Wu, Ying verfasserin (orcid)0000-0002-5458-0165 aut Liu, Xiaoxuan verfasserin aut Zou, Bingsuo verfasserin aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 306 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:306 GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ 51.00 Werkstoffkunde: Allgemeines VZ AR 306
allfieldsSound	10.1016/j.matchemphys.2023.128096 doi (DE-627)ELV059963662 (ELSEVIER)S0254-0584(23)00804-0 DE-627 ger DE-627 rda eng 540 530 VZ ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl Sun, Feiyang verfasserin (orcid)0009-0005-2003-7104 aut To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface. Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer Yang, Shengyi verfasserin (orcid)0000-0001-5038-491X aut Zhang, Zhenheng verfasserin aut Muhammad, Sulaman verfasserin aut Ge, Zhenhua verfasserin aut Hu, Jinming verfasserin aut Li, Chunyang verfasserin aut Wu, Ying verfasserin (orcid)0000-0002-5458-0165 aut Liu, Xiaoxuan verfasserin aut Zou, Bingsuo verfasserin aut Enthalten in Materials chemistry and physics New York, NY [u.a.] : Elsevier, 1983 306 Online-Ressource (DE-627)302719350 (DE-600)1491959-X (DE-576)096806435 nnns volume:306 GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-ASIEN SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ 51.00 Werkstoffkunde: Allgemeines VZ AR 306
language	English
source	Enthalten in Materials chemistry and physics 306 volume:306
sourceStr	Enthalten in Materials chemistry and physics 306 volume:306
format_phy_str_mv	Article
bklname	Festkörperchemie Festkörperphysik Werkstoffkunde: Allgemeines
institution	findex.gbv.de
topic_facet	Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer
dewey-raw	540
isfreeaccess_bool	false
container_title	Materials chemistry and physics
authorswithroles_txt_mv	Sun, Feiyang @@aut@@ Yang, Shengyi @@aut@@ Zhang, Zhenheng @@aut@@ Muhammad, Sulaman @@aut@@ Ge, Zhenhua @@aut@@ Hu, Jinming @@aut@@ Li, Chunyang @@aut@@ Wu, Ying @@aut@@ Liu, Xiaoxuan @@aut@@ Zou, Bingsuo @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	302719350
dewey-sort	3540
id	ELV059963662
language_de	englisch
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author	Sun, Feiyang
spellingShingle	Sun, Feiyang ddc 540 fid ASIEN ssgn 6,25 bkl 35.90 bkl 33.61 bkl 51.00 misc Colloidal quantum dots misc Ag nanoparticles misc Self-driven infrared photodetectors misc Heterojunction interface misc Electron-transporting layer To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
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topic_title	540 530 VZ ASIEN DE-1a fid 6,25 ssgn 35.90 bkl 33.61 bkl 51.00 bkl To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer Colloidal quantum dots Ag nanoparticles Self-driven infrared photodetectors Heterojunction interface Electron-transporting layer
topic	ddc 540 fid ASIEN ssgn 6,25 bkl 35.90 bkl 33.61 bkl 51.00 misc Colloidal quantum dots misc Ag nanoparticles misc Self-driven infrared photodetectors misc Heterojunction interface misc Electron-transporting layer
topic_unstemmed	ddc 540 fid ASIEN ssgn 6,25 bkl 35.90 bkl 33.61 bkl 51.00 misc Colloidal quantum dots misc Ag nanoparticles misc Self-driven infrared photodetectors misc Heterojunction interface misc Electron-transporting layer
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title	To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
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title_full	To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
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author_browse	Sun, Feiyang Yang, Shengyi Zhang, Zhenheng Muhammad, Sulaman Ge, Zhenhua Hu, Jinming Li, Chunyang Wu, Ying Liu, Xiaoxuan Zou, Bingsuo
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title_sort	to improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
title_auth	To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
abstract	Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface.
abstractGer	Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface.
abstract_unstemmed	Lead selenide colloidal quantum dots (CQDs) are widely used in infrared photodetectors due to their size-dependent bandgap tunability, facile solution-processing techniques and low cost. Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. In this way, it provides a very efficient method for enhanced-performance self-driven HJ photodetectors by inserting a thin layer of metal NPs into the electron-transporting layer close to the heterojunction interface.
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title_short	To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer
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author2	Yang, Shengyi Zhang, Zhenheng Muhammad, Sulaman Ge, Zhenhua Hu, Jinming Li, Chunyang Wu, Ying Liu, Xiaoxuan Zou, Bingsuo
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doi_str	10.1016/j.matchemphys.2023.128096
up_date	2024-07-06T23:25:09.666Z
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Heterojunctions (HJs) are usually used to construct device to facilitate the separation of excitons and the transportation of photogenerated carriers. Based on the solution-processed HJ photodetector ITO/ZnO/PbSe/Ag, in which PbSe CQDs layer acts as the active layer and ZnO nanoparticles (NPs) layer as the electron-transporting layer, a greatly enhanced-performance was obtained after inserting 10 nm Ag NPs layer within the ZnO NPs layer close to the HJ ZnO/PbSe interface. By optimizing the concentration of Ag NPs solutions and the location of Ag NPs thin layer in ZnO film, the maximum responsivity of the self-driven HJ photodetector ITO/ZnO(50 nm):Ag-NPs(10 nm):ZnO(50 nm)/PbSe(300 nm)/Ag reaches to 6.25 mA/W with a specific detectivity D* of 5.17 × 10 11 Jones under 8.5 μ W / c m ² 1550 nm illumination at zero bias. Further, the underlain physical mechanisms for the enhanced-performance were discussed in details. 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To improve device performance of self-driven heterojunction photodetectors by inserting a thin layer of silver nanoparticles into the electron-transporting layer

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