ARCADIA FD-MAPS: Simulation, characterization and perspectives for high resolution timing applications
Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve c...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Neubüser, C. [verfasserIn] Corradino, T. [verfasserIn] Dalla Betta, G.-F. [verfasserIn] Pancheri, L. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Nuclear instruments & methods in physics research / A - Amsterdam : North-Holland Publ. Co., 1984, 1048 |
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| Übergeordnetes Werk: |
volume:1048 |
| DOI / URN: |
10.1016/j.nima.2022.167946 |
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| Katalog-ID: |
ELV060028386 |
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| 520 | |a Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. | ||
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| 700 | 1 | |a Corradino, T. |e verfasserin |0 (orcid)0000-0003-0236-6834 |4 aut | |
| 700 | 1 | |a Dalla Betta, G.-F. |e verfasserin |0 (orcid)0000-0001-5516-9282 |4 aut | |
| 700 | 1 | |a Pancheri, L. |e verfasserin |4 aut | |
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10.1016/j.nima.2022.167946 doi (DE-627)ELV060028386 (ELSEVIER)S0168-9002(22)01238-4 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Neubüser, C. verfasserin (orcid)0000-0002-2008-8404 aut ARCADIA FD-MAPS: Simulation, characterization and perspectives for high resolution timing applications 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. MAPS Radiation detectors Pixel detectors CMOS TCAD simulations Corradino, T. verfasserin (orcid)0000-0003-0236-6834 aut Dalla Betta, G.-F. verfasserin (orcid)0000-0001-5516-9282 aut Pancheri, L. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1048 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1048 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1048 |
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10.1016/j.nima.2022.167946 doi (DE-627)ELV060028386 (ELSEVIER)S0168-9002(22)01238-4 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Neubüser, C. verfasserin (orcid)0000-0002-2008-8404 aut ARCADIA FD-MAPS: Simulation, characterization and perspectives for high resolution timing applications 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. MAPS Radiation detectors Pixel detectors CMOS TCAD simulations Corradino, T. verfasserin (orcid)0000-0003-0236-6834 aut Dalla Betta, G.-F. verfasserin (orcid)0000-0001-5516-9282 aut Pancheri, L. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1048 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1048 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1048 |
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10.1016/j.nima.2022.167946 doi (DE-627)ELV060028386 (ELSEVIER)S0168-9002(22)01238-4 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Neubüser, C. verfasserin (orcid)0000-0002-2008-8404 aut ARCADIA FD-MAPS: Simulation, characterization and perspectives for high resolution timing applications 2022 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. MAPS Radiation detectors Pixel detectors CMOS TCAD simulations Corradino, T. verfasserin (orcid)0000-0003-0236-6834 aut Dalla Betta, G.-F. verfasserin (orcid)0000-0001-5516-9282 aut Pancheri, L. verfasserin aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1048 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1048 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1048 |
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ARCADIA FD-MAPS: Simulation, characterization and perspectives for high resolution timing applications |
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arcadia fd-maps: simulation, characterization and perspectives for high resolution timing applications |
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ARCADIA FD-MAPS: Simulation, characterization and perspectives for high resolution timing applications |
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Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. |
| abstractGer |
Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. |
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Monolithic Active Pixel Sensors (MAPS) are a promising technology that provides large sensitive areas at potentially low power consumption and low material budget. The ARCADIA project is developing Fully Depleted MAPS (FD-MAPS) with an innovative sensor design, that uses a backside bias to improve charge collection efficiency and timing over a wide range of operational and environmental conditions. The ARCADIA collaboration has produced a large set of prototypes in the first two engineering runs, with the main design consisting of a 512 × 512 pixel matrix with 25 μ m pixel pitch and other smaller active sensor arrays. Test structures of pixel matrices with pixel pitches ranging from 10 to 50 μ m and total thicknesses of 50 to 200 μ m have also been included, to ease the characterization of the sensors independently from integrated electronics. We give an overview of the status of the project and then focus on the characterization of the passive pixel matrices which include Capacitance–Voltage (CV) and Current–Voltage (IV), as well as Transient Current Technique (TCT) measurements with a red and an infrared laser. We could confirm a single pixel capacitance below 5fF for pixels with 25 μ m pitch, and a 90% charge collection of MIP-like charge depositions within 12ns in 100 μ m active thickness. These results are complemented and supported by Technology Computer Aided Design (TCAD) simulations. |
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