Effective measurement of magnetic tunneling junction noise based on the equivalent noise model
The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements...
Ausführliche Beschreibung
Autor*in: |
Zhang, Xinmiao [verfasserIn] Ji, Minhui [verfasserIn] Pan, Mengchun [verfasserIn] Sun, Kun [verfasserIn] Hu, Yueguo [verfasserIn] Du, Qingfa [verfasserIn] Li, Peisen [verfasserIn] Peng, Junping [verfasserIn] Hu, Jiafei [verfasserIn] Qiu, Weicheng [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Journal of magnetism and magnetic materials - Amsterdam : North-Holland Publ. Co., 1975, 580 |
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Übergeordnetes Werk: |
volume:580 |
DOI / URN: |
10.1016/j.jmmm.2023.170930 |
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Katalog-ID: |
ELV060095210 |
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245 | 1 | 0 | |a Effective measurement of magnetic tunneling junction noise based on the equivalent noise model |
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520 | |a The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. | ||
650 | 4 | |a Magnetic tunneling junction (MTJ) | |
650 | 4 | |a Noise measurement | |
650 | 4 | |a The equivalent noise model | |
700 | 1 | |a Ji, Minhui |e verfasserin |4 aut | |
700 | 1 | |a Pan, Mengchun |e verfasserin |4 aut | |
700 | 1 | |a Sun, Kun |e verfasserin |4 aut | |
700 | 1 | |a Hu, Yueguo |e verfasserin |4 aut | |
700 | 1 | |a Du, Qingfa |e verfasserin |4 aut | |
700 | 1 | |a Li, Peisen |e verfasserin |4 aut | |
700 | 1 | |a Peng, Junping |e verfasserin |4 aut | |
700 | 1 | |a Hu, Jiafei |e verfasserin |4 aut | |
700 | 1 | |a Qiu, Weicheng |e verfasserin |0 (orcid)0000-0003-3507-6745 |4 aut | |
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10.1016/j.jmmm.2023.170930 doi (DE-627)ELV060095210 (ELSEVIER)S0304-8853(23)00580-2 DE-627 ger DE-627 rda eng 530 VZ 33.16 bkl Zhang, Xinmiao verfasserin aut Effective measurement of magnetic tunneling junction noise based on the equivalent noise model 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model Ji, Minhui verfasserin aut Pan, Mengchun verfasserin aut Sun, Kun verfasserin aut Hu, Yueguo verfasserin aut Du, Qingfa verfasserin aut Li, Peisen verfasserin aut Peng, Junping verfasserin aut Hu, Jiafei verfasserin aut Qiu, Weicheng verfasserin (orcid)0000-0003-3507-6745 aut Enthalten in Journal of magnetism and magnetic materials Amsterdam : North-Holland Publ. Co., 1975 580 Online-Ressource (DE-627)271175958 (DE-600)1479000-2 (DE-576)078412331 0304-8853 nnns volume:580 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.16 Elektrizität Magnetismus VZ AR 580 |
spelling |
10.1016/j.jmmm.2023.170930 doi (DE-627)ELV060095210 (ELSEVIER)S0304-8853(23)00580-2 DE-627 ger DE-627 rda eng 530 VZ 33.16 bkl Zhang, Xinmiao verfasserin aut Effective measurement of magnetic tunneling junction noise based on the equivalent noise model 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model Ji, Minhui verfasserin aut Pan, Mengchun verfasserin aut Sun, Kun verfasserin aut Hu, Yueguo verfasserin aut Du, Qingfa verfasserin aut Li, Peisen verfasserin aut Peng, Junping verfasserin aut Hu, Jiafei verfasserin aut Qiu, Weicheng verfasserin (orcid)0000-0003-3507-6745 aut Enthalten in Journal of magnetism and magnetic materials Amsterdam : North-Holland Publ. Co., 1975 580 Online-Ressource (DE-627)271175958 (DE-600)1479000-2 (DE-576)078412331 0304-8853 nnns volume:580 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.16 Elektrizität Magnetismus VZ AR 580 |
allfields_unstemmed |
10.1016/j.jmmm.2023.170930 doi (DE-627)ELV060095210 (ELSEVIER)S0304-8853(23)00580-2 DE-627 ger DE-627 rda eng 530 VZ 33.16 bkl Zhang, Xinmiao verfasserin aut Effective measurement of magnetic tunneling junction noise based on the equivalent noise model 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model Ji, Minhui verfasserin aut Pan, Mengchun verfasserin aut Sun, Kun verfasserin aut Hu, Yueguo verfasserin aut Du, Qingfa verfasserin aut Li, Peisen verfasserin aut Peng, Junping verfasserin aut Hu, Jiafei verfasserin aut Qiu, Weicheng verfasserin (orcid)0000-0003-3507-6745 aut Enthalten in Journal of magnetism and magnetic materials Amsterdam : North-Holland Publ. Co., 1975 580 Online-Ressource (DE-627)271175958 (DE-600)1479000-2 (DE-576)078412331 0304-8853 nnns volume:580 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.16 Elektrizität Magnetismus VZ AR 580 |
allfieldsGer |
10.1016/j.jmmm.2023.170930 doi (DE-627)ELV060095210 (ELSEVIER)S0304-8853(23)00580-2 DE-627 ger DE-627 rda eng 530 VZ 33.16 bkl Zhang, Xinmiao verfasserin aut Effective measurement of magnetic tunneling junction noise based on the equivalent noise model 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model Ji, Minhui verfasserin aut Pan, Mengchun verfasserin aut Sun, Kun verfasserin aut Hu, Yueguo verfasserin aut Du, Qingfa verfasserin aut Li, Peisen verfasserin aut Peng, Junping verfasserin aut Hu, Jiafei verfasserin aut Qiu, Weicheng verfasserin (orcid)0000-0003-3507-6745 aut Enthalten in Journal of magnetism and magnetic materials Amsterdam : North-Holland Publ. Co., 1975 580 Online-Ressource (DE-627)271175958 (DE-600)1479000-2 (DE-576)078412331 0304-8853 nnns volume:580 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.16 Elektrizität Magnetismus VZ AR 580 |
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10.1016/j.jmmm.2023.170930 doi (DE-627)ELV060095210 (ELSEVIER)S0304-8853(23)00580-2 DE-627 ger DE-627 rda eng 530 VZ 33.16 bkl Zhang, Xinmiao verfasserin aut Effective measurement of magnetic tunneling junction noise based on the equivalent noise model 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model Ji, Minhui verfasserin aut Pan, Mengchun verfasserin aut Sun, Kun verfasserin aut Hu, Yueguo verfasserin aut Du, Qingfa verfasserin aut Li, Peisen verfasserin aut Peng, Junping verfasserin aut Hu, Jiafei verfasserin aut Qiu, Weicheng verfasserin (orcid)0000-0003-3507-6745 aut Enthalten in Journal of magnetism and magnetic materials Amsterdam : North-Holland Publ. Co., 1975 580 Online-Ressource (DE-627)271175958 (DE-600)1479000-2 (DE-576)078412331 0304-8853 nnns volume:580 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.16 Elektrizität Magnetismus VZ AR 580 |
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Enthalten in Journal of magnetism and magnetic materials 580 volume:580 |
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Enthalten in Journal of magnetism and magnetic materials 580 volume:580 |
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Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model |
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Zhang, Xinmiao @@aut@@ Ji, Minhui @@aut@@ Pan, Mengchun @@aut@@ Sun, Kun @@aut@@ Hu, Yueguo @@aut@@ Du, Qingfa @@aut@@ Li, Peisen @@aut@@ Peng, Junping @@aut@@ Hu, Jiafei @@aut@@ Qiu, Weicheng @@aut@@ |
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Zhang, Xinmiao |
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Zhang, Xinmiao ddc 530 bkl 33.16 misc Magnetic tunneling junction (MTJ) misc Noise measurement misc The equivalent noise model Effective measurement of magnetic tunneling junction noise based on the equivalent noise model |
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530 VZ 33.16 bkl Effective measurement of magnetic tunneling junction noise based on the equivalent noise model Magnetic tunneling junction (MTJ) Noise measurement The equivalent noise model |
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Effective measurement of magnetic tunneling junction noise based on the equivalent noise model |
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Zhang, Xinmiao Ji, Minhui Pan, Mengchun Sun, Kun Hu, Yueguo Du, Qingfa Li, Peisen Peng, Junping Hu, Jiafei Qiu, Weicheng |
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effective measurement of magnetic tunneling junction noise based on the equivalent noise model |
title_auth |
Effective measurement of magnetic tunneling junction noise based on the equivalent noise model |
abstract |
The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. |
abstractGer |
The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. |
abstract_unstemmed |
The intrinsic noise of magnetic tunneling junctions (MTJs) limits the detectivity of tunneling magnetoresistance (TMR) sensors, as a key factor. Therefore, researches into the intrinsic MTJ noise are essential to enhance the TMR detectivity. However, the noise measurement result of the MTJ elements usually deviates from the intrinsic noise, especially when the MTJ resistance exceeds the range of impedance matching. This deviation results in the difficulty to enhance the TMR detectivity efficiently. In this paper, we propose an equivalent noise model to deal with the deviation between the output and the intrinsic noise. The model demonstrates the noise sources and the corresponding transfer functions in a normal noise measurement system. After calibrating the model parameters, we extract the thermal noise of some metal film resistors based on the model to indicate the model’s reliability. Furthermore, we apply the model to extract the intrinsic noise of MTJ elements with different resistances. The result indicates it is realizable to measure the intrinsic MTJ noise without considering the MTJ resistance range. Our work provides an effective way to obtain the intrinsic MTJ noise from the experimental output, which is important for the noise investigation on TMR sensors. |
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title_short |
Effective measurement of magnetic tunneling junction noise based on the equivalent noise model |
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Ji, Minhui Pan, Mengchun Sun, Kun Hu, Yueguo Du, Qingfa Li, Peisen Peng, Junping Hu, Jiafei Qiu, Weicheng |
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up_date |
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|
score |
7.4008074 |