Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells

Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catal...
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Autor*in:	Deng, Jianping [verfasserIn] Yang, Pan [verfasserIn] Wei, Kang [verfasserIn] Wang, Yili [verfasserIn] Lv, Wenlei [verfasserIn] Huang, Wendeng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	P-doped CuS Counter electrode Phosphating Solar cells

Übergeordnetes Werk:	Enthalten in: Solid state sciences - Amsterdam [u.a.] : Elsevier, 1999, 142
Übergeordnetes Werk:	volume:142

DOI / URN:	10.1016/j.solidstatesciences.2023.107254

Katalog-ID:	ELV060987251

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520			\|a Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor.
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publishDate	2023
allfields	10.1016/j.solidstatesciences.2023.107254 doi (DE-627)ELV060987251 (ELSEVIER)S1293-2558(23)00146-2 DE-627 ger DE-627 rda eng 550 VZ 35.90 bkl 33.61 bkl Deng, Jianping verfasserin (orcid)0000-0002-0975-4883 aut Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor. P-doped CuS Counter electrode Phosphating Solar cells Yang, Pan verfasserin aut Wei, Kang verfasserin aut Wang, Yili verfasserin aut Lv, Wenlei verfasserin aut Huang, Wendeng verfasserin aut Enthalten in Solid state sciences Amsterdam [u.a.] : Elsevier, 1999 142 Online-Ressource (DE-627)325294852 (DE-600)2035101-X (DE-576)094081069 1293-2558 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ AR 142
spelling	10.1016/j.solidstatesciences.2023.107254 doi (DE-627)ELV060987251 (ELSEVIER)S1293-2558(23)00146-2 DE-627 ger DE-627 rda eng 550 VZ 35.90 bkl 33.61 bkl Deng, Jianping verfasserin (orcid)0000-0002-0975-4883 aut Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor. P-doped CuS Counter electrode Phosphating Solar cells Yang, Pan verfasserin aut Wei, Kang verfasserin aut Wang, Yili verfasserin aut Lv, Wenlei verfasserin aut Huang, Wendeng verfasserin aut Enthalten in Solid state sciences Amsterdam [u.a.] : Elsevier, 1999 142 Online-Ressource (DE-627)325294852 (DE-600)2035101-X (DE-576)094081069 1293-2558 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ AR 142
allfields_unstemmed	10.1016/j.solidstatesciences.2023.107254 doi (DE-627)ELV060987251 (ELSEVIER)S1293-2558(23)00146-2 DE-627 ger DE-627 rda eng 550 VZ 35.90 bkl 33.61 bkl Deng, Jianping verfasserin (orcid)0000-0002-0975-4883 aut Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor. P-doped CuS Counter electrode Phosphating Solar cells Yang, Pan verfasserin aut Wei, Kang verfasserin aut Wang, Yili verfasserin aut Lv, Wenlei verfasserin aut Huang, Wendeng verfasserin aut Enthalten in Solid state sciences Amsterdam [u.a.] : Elsevier, 1999 142 Online-Ressource (DE-627)325294852 (DE-600)2035101-X (DE-576)094081069 1293-2558 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ AR 142
allfieldsGer	10.1016/j.solidstatesciences.2023.107254 doi (DE-627)ELV060987251 (ELSEVIER)S1293-2558(23)00146-2 DE-627 ger DE-627 rda eng 550 VZ 35.90 bkl 33.61 bkl Deng, Jianping verfasserin (orcid)0000-0002-0975-4883 aut Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor. P-doped CuS Counter electrode Phosphating Solar cells Yang, Pan verfasserin aut Wei, Kang verfasserin aut Wang, Yili verfasserin aut Lv, Wenlei verfasserin aut Huang, Wendeng verfasserin aut Enthalten in Solid state sciences Amsterdam [u.a.] : Elsevier, 1999 142 Online-Ressource (DE-627)325294852 (DE-600)2035101-X (DE-576)094081069 1293-2558 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ AR 142
allfieldsSound	10.1016/j.solidstatesciences.2023.107254 doi (DE-627)ELV060987251 (ELSEVIER)S1293-2558(23)00146-2 DE-627 ger DE-627 rda eng 550 VZ 35.90 bkl 33.61 bkl Deng, Jianping verfasserin (orcid)0000-0002-0975-4883 aut Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor. P-doped CuS Counter electrode Phosphating Solar cells Yang, Pan verfasserin aut Wei, Kang verfasserin aut Wang, Yili verfasserin aut Lv, Wenlei verfasserin aut Huang, Wendeng verfasserin aut Enthalten in Solid state sciences Amsterdam [u.a.] : Elsevier, 1999 142 Online-Ressource (DE-627)325294852 (DE-600)2035101-X (DE-576)094081069 1293-2558 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.90 Festkörperchemie VZ 33.61 Festkörperphysik VZ AR 142
language	English
source	Enthalten in Solid state sciences 142 volume:142
sourceStr	Enthalten in Solid state sciences 142 volume:142
format_phy_str_mv	Article
bklname	Festkörperchemie Festkörperphysik
institution	findex.gbv.de
topic_facet	P-doped CuS Counter electrode Phosphating Solar cells
dewey-raw	550
isfreeaccess_bool	false
container_title	Solid state sciences
authorswithroles_txt_mv	Deng, Jianping @@aut@@ Yang, Pan @@aut@@ Wei, Kang @@aut@@ Wang, Yili @@aut@@ Lv, Wenlei @@aut@@ Huang, Wendeng @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	325294852
dewey-sort	3550
id	ELV060987251
language_de	englisch
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author	Deng, Jianping
spellingShingle	Deng, Jianping ddc 550 bkl 35.90 bkl 33.61 misc P-doped CuS misc Counter electrode misc Phosphating misc Solar cells Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells
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topic_title	550 VZ 35.90 bkl 33.61 bkl Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells P-doped CuS Counter electrode Phosphating Solar cells
topic	ddc 550 bkl 35.90 bkl 33.61 misc P-doped CuS misc Counter electrode misc Phosphating misc Solar cells
topic_unstemmed	ddc 550 bkl 35.90 bkl 33.61 misc P-doped CuS misc Counter electrode misc Phosphating misc Solar cells
topic_browse	ddc 550 bkl 35.90 bkl 33.61 misc P-doped CuS misc Counter electrode misc Phosphating misc Solar cells
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title	Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells
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title_full	Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells
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author_browse	Deng, Jianping Yang, Pan Wei, Kang Wang, Yili Lv, Wenlei Huang, Wendeng
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author-letter	Deng, Jianping
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title_sort	phosphorus doped cus as an advanced counter electrode for quantum dot-sensitized solar cells
title_auth	Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells
abstract	Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor.
abstractGer	Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor.
abstract_unstemmed	Developing an efficient material as a counter electrode (CE) with excellent catalytic activity and low cost is essential for the commercial application of quantum dot-sensitized solar cells (QDSSCs). Transition metal phosphides and sulfides have been demonstrated as outstanding multifunctional catalysts in a broad range of energy conversion technologies. Herein, we exploited an advanced phosphorus doped copper sulfide (P-doped CuS) as CEs in QDSSCs. P-doped CuS was synthesized by a hydrothermal process and subsequently a process for phosphatizing CuS in a tube furnace at 270 °C with NaH2PO2 as the phosphorus source. The morphology, composition and crystalline phase of P-doped CuS have been studied by X-ray and electron-based characterizations (XRD, SEM, TEM and XPS). The photovoltaic parameters of QDSSCs based on P-doped CuS CEs show an obvious dependence on the P-doping concentration, and QDSSCs based on the P-doped CuS CE with 1.9% P-doping yield a maximum power conversion efficiency of 3.45%, a 36% improvement over the QDSSCs based on the CuS CEs. Electrochemical impedance spectroscopy, Tafel polarization and cyclic voltammetry measurements showed that the electrocatalytic activity of P-doped CuS CEs in the S2−/Sn 2− redox reaction was higher than that of CuS CEs, which supported the results of enhanced short-circuit current density, open circuit voltage and filling factor.
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title_short	Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells
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author2	Yang, Pan Wei, Kang Wang, Yili Lv, Wenlei Huang, Wendeng
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up_date	2024-07-06T17:04:41.730Z
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Phosphorus doped CuS as an advanced counter electrode for quantum dot-sensitized solar cells

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