Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance

The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin laye...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Samuel, A. [verfasserIn] Kuo, Y. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy

Übergeordnetes Werk:	Enthalten in: Solid state electronics - Oxford [u.a.] : Pergamon, Elsevier Science, 1960, 204
Übergeordnetes Werk:	volume:204

DOI / URN:	10.1016/j.sse.2023.108651

Katalog-ID:	ELV061109894

Internformat


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245	1	0	\|a Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
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520			\|a The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide.
650		4	\|a Solid state incandescent light emitting device
650		4	\|a Dielectric breakdown
650		4	\|a Optical emission spectroscopy
700	1		\|a Kuo, Y. \|e verfasserin \|0 (orcid)0000-0003-2757-1842 \|4 aut
773	0	8	\|i Enthalten in \|t Solid state electronics \|d Oxford [u.a.] : Pergamon, Elsevier Science, 1960 \|g 204 \|h Online-Ressource \|w (DE-627)32050591X \|w (DE-600)2012825-3 \|w (DE-576)098474189 \|7 nnns
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Indexfelder

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matchkey_str	samuelakuoy:2023----:siainfheisocaatrsisfoisaenadsetiheitndvcsyi
hierarchy_sort_str	2023
bklnumber	33.72 33.61 53.56 53.52
publishDate	2023
allfields	10.1016/j.sse.2023.108651 doi (DE-627)ELV061109894 (ELSEVIER)S0038-1101(23)00064-3 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Samuel, A. verfasserin (orcid)0000-0003-1912-2000 aut Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide. Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy Kuo, Y. verfasserin (orcid)0000-0003-2757-1842 aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 204 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 204
spelling	10.1016/j.sse.2023.108651 doi (DE-627)ELV061109894 (ELSEVIER)S0038-1101(23)00064-3 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Samuel, A. verfasserin (orcid)0000-0003-1912-2000 aut Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide. Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy Kuo, Y. verfasserin (orcid)0000-0003-2757-1842 aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 204 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 204
allfields_unstemmed	10.1016/j.sse.2023.108651 doi (DE-627)ELV061109894 (ELSEVIER)S0038-1101(23)00064-3 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Samuel, A. verfasserin (orcid)0000-0003-1912-2000 aut Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide. Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy Kuo, Y. verfasserin (orcid)0000-0003-2757-1842 aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 204 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 204
allfieldsGer	10.1016/j.sse.2023.108651 doi (DE-627)ELV061109894 (ELSEVIER)S0038-1101(23)00064-3 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Samuel, A. verfasserin (orcid)0000-0003-1912-2000 aut Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide. Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy Kuo, Y. verfasserin (orcid)0000-0003-2757-1842 aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 204 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 204
allfieldsSound	10.1016/j.sse.2023.108651 doi (DE-627)ELV061109894 (ELSEVIER)S0038-1101(23)00064-3 DE-627 ger DE-627 rda eng 530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Samuel, A. verfasserin (orcid)0000-0003-1912-2000 aut Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide. Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy Kuo, Y. verfasserin (orcid)0000-0003-2757-1842 aut Enthalten in Solid state electronics Oxford [u.a.] : Pergamon, Elsevier Science, 1960 204 Online-Ressource (DE-627)32050591X (DE-600)2012825-3 (DE-576)098474189 nnns volume:204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.72 Halbleiterphysik VZ 33.61 Festkörperphysik VZ 53.56 Halbleitertechnologie VZ 53.52 Elektronische Schaltungen VZ AR 204
language	English
source	Enthalten in Solid state electronics 204 volume:204
sourceStr	Enthalten in Solid state electronics 204 volume:204
format_phy_str_mv	Article
bklname	Halbleiterphysik Festkörperphysik Halbleitertechnologie Elektronische Schaltungen
institution	findex.gbv.de
topic_facet	Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy
dewey-raw	530
isfreeaccess_bool	false
container_title	Solid state electronics
authorswithroles_txt_mv	Samuel, A. @@aut@@ Kuo, Y. @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	32050591X
dewey-sort	3530
id	ELV061109894
language_de	englisch
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author	Samuel, A.
spellingShingle	Samuel, A. ddc 530 bkl 33.72 bkl 33.61 bkl 53.56 bkl 53.52 misc Solid state incandescent light emitting device misc Dielectric breakdown misc Optical emission spectroscopy Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
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topic_title	530 620 VZ 33.72 bkl 33.61 bkl 53.56 bkl 53.52 bkl Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance Solid state incandescent light emitting device Dielectric breakdown Optical emission spectroscopy
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title	Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
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title_full	Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
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title_sort	estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
title_auth	Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
abstract	The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide.
abstractGer	The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide.
abstract_unstemmed	The Solid-State Incandescent Light Emitting Device is a broad-band, white-light emitting device that functions by the Joule heating of nano-resistors. The effect of tungsten on the emissive properties of the device was explored by comparing the spectral irradiance of samples made from ultrathin layers of tungsten embedded in zirconium doped hafnium oxide gate dielectrics in single-layer and tri-layer structures. Through linear regression fitting of this data to Planck’s law alongside C-V measurements, the relative emissivity of nano-resistors, the radiant power, the total nano-resistor area as well the color corrected temperature were calculated. The embedded tungsten greatly increased the emissivity of the device without negatively affecting interface properties and hysteresis. At the same time, it caused increases in leakage current and charge trapping numbers as well as fewer but large nano-resistors formation due to material mismatch between tungsten and zirconium doped hafnium oxide.
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title_short	Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance
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doi_str	10.1016/j.sse.2023.108651
up_date	2024-07-06T17:13:39.788Z
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Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance

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