Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant
Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitr...
Ausführliche Beschreibung
Autor*in: |
Zhao, Ke [verfasserIn] Wei, Siyu [verfasserIn] Wang, Meng [verfasserIn] Chen, Yingbo [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2023 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Ceramics international - Amsterdam [u.a.] : Elsevier Science, 1995, 49, Seite 32577-32587 |
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Übergeordnetes Werk: |
volume:49 ; pages:32577-32587 |
DOI / URN: |
10.1016/j.ceramint.2023.07.224 |
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Katalog-ID: |
ELV062685805 |
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520 | |a Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. | ||
650 | 4 | |a Hexagonal boron nitride | |
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allfields |
10.1016/j.ceramint.2023.07.224 doi (DE-627)ELV062685805 (ELSEVIER)S0272-8842(23)02158-2 DE-627 ger DE-627 rda eng 670 VZ 51.60 bkl 58.45 bkl Zhao, Ke verfasserin aut Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. Hexagonal boron nitride Polyimide Dielectric Thermal conductivity Wei, Siyu verfasserin aut Wang, Meng verfasserin aut Chen, Yingbo verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 49, Seite 32577-32587 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:49 pages:32577-32587 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 49 32577-32587 |
spelling |
10.1016/j.ceramint.2023.07.224 doi (DE-627)ELV062685805 (ELSEVIER)S0272-8842(23)02158-2 DE-627 ger DE-627 rda eng 670 VZ 51.60 bkl 58.45 bkl Zhao, Ke verfasserin aut Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. Hexagonal boron nitride Polyimide Dielectric Thermal conductivity Wei, Siyu verfasserin aut Wang, Meng verfasserin aut Chen, Yingbo verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 49, Seite 32577-32587 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:49 pages:32577-32587 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 49 32577-32587 |
allfields_unstemmed |
10.1016/j.ceramint.2023.07.224 doi (DE-627)ELV062685805 (ELSEVIER)S0272-8842(23)02158-2 DE-627 ger DE-627 rda eng 670 VZ 51.60 bkl 58.45 bkl Zhao, Ke verfasserin aut Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. Hexagonal boron nitride Polyimide Dielectric Thermal conductivity Wei, Siyu verfasserin aut Wang, Meng verfasserin aut Chen, Yingbo verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 49, Seite 32577-32587 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:49 pages:32577-32587 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 49 32577-32587 |
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10.1016/j.ceramint.2023.07.224 doi (DE-627)ELV062685805 (ELSEVIER)S0272-8842(23)02158-2 DE-627 ger DE-627 rda eng 670 VZ 51.60 bkl 58.45 bkl Zhao, Ke verfasserin aut Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. Hexagonal boron nitride Polyimide Dielectric Thermal conductivity Wei, Siyu verfasserin aut Wang, Meng verfasserin aut Chen, Yingbo verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 49, Seite 32577-32587 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:49 pages:32577-32587 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 49 32577-32587 |
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10.1016/j.ceramint.2023.07.224 doi (DE-627)ELV062685805 (ELSEVIER)S0272-8842(23)02158-2 DE-627 ger DE-627 rda eng 670 VZ 51.60 bkl 58.45 bkl Zhao, Ke verfasserin aut Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. Hexagonal boron nitride Polyimide Dielectric Thermal conductivity Wei, Siyu verfasserin aut Wang, Meng verfasserin aut Chen, Yingbo verfasserin aut Enthalten in Ceramics international Amsterdam [u.a.] : Elsevier Science, 1995 49, Seite 32577-32587 Online-Ressource (DE-627)320584305 (DE-600)2018052-4 (DE-576)25523063X 0272-8842 nnns volume:49 pages:32577-32587 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 49 32577-32587 |
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670 VZ 51.60 bkl 58.45 bkl Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant Hexagonal boron nitride Polyimide Dielectric Thermal conductivity |
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Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant |
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Zhao, Ke Wei, Siyu Wang, Meng Chen, Yingbo |
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10.1016/j.ceramint.2023.07.224 |
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alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant |
title_auth |
Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant |
abstract |
Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. |
abstractGer |
Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. |
abstract_unstemmed |
Owing to the rapid development of the latest micro-electronic devices, polymer composite materials that combine high thermal conductivity and low permittivity have aroused the interest of researchers. However, it is a huge challenge to balance the above parameters. In this work, hexagonal boron nitride (h-BN) powder was ultrasonically exfoliated to obtain alkylated boron nitride nanosheets (Alkyl-BNNS). Then, a series of polyimide (PI) composites were synthesized with different amounts of Alkyl-BNNS. Attributed to more robust interfacial non-covalent interactions between Alkyl-BNNS and polymer chains to inhibit interfacial polarization, Alkyl-BNNS can be scattered well in PI substrate. Thus, the obtained PI composite behaved a high thermal conductivity of 6.21 W/(mK) and a low dielectric constant (3.23) under the load of 20 wt%. Besides, Alkyl-BNNS/PI composites have efficient thermal management capability, low water absorption, favorable electrical resistance, and prominent tensile strength. Importantly, these composite films are expected to be excellent candidates in the field of microelectronics. |
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title_short |
Alkylated modified boron nitride nanosheets/polyimide composite films with advanced thermal conductivity and low dielectric constant |
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