Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis
Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointe...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chen, Fujun [verfasserIn] Qian, Hao [verfasserIn] Sun, Xiaoyuan [verfasserIn] Zheng, Tianyang [verfasserIn] Liu, Yunfei [verfasserIn] Luo, Jin [verfasserIn] Lyu, Yinong [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: No title available - 164, Seite 198-204 |
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| Übergeordnetes Werk: |
volume:164 ; pages:198-204 |
| DOI / URN: |
10.1016/j.jmst.2023.05.015 |
|---|
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ELV063332426 |
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| 245 | 1 | 0 | |a Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis |
| 264 | 1 | |c 2023 | |
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| 520 | |a Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. | ||
| 650 | 4 | |a Hydrothermal synthesis | |
| 650 | 4 | |a Growth mechanism | |
| 650 | 4 | |a Interfacial coupling | |
| 650 | 4 | |a AC-STEM | |
| 650 | 4 | |a Octahedral tilt | |
| 700 | 1 | |a Qian, Hao |e verfasserin |4 aut | |
| 700 | 1 | |a Sun, Xiaoyuan |e verfasserin |4 aut | |
| 700 | 1 | |a Zheng, Tianyang |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Yunfei |e verfasserin |4 aut | |
| 700 | 1 | |a Luo, Jin |e verfasserin |4 aut | |
| 700 | 1 | |a Lyu, Yinong |e verfasserin |4 aut | |
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10.1016/j.jmst.2023.05.015 doi (DE-627)ELV063332426 (ELSEVIER)S1005-0302(23)00486-3 DE-627 ger DE-627 rda eng Chen, Fujun verfasserin aut Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt Qian, Hao verfasserin aut Sun, Xiaoyuan verfasserin aut Zheng, Tianyang verfasserin aut Liu, Yunfei verfasserin aut Luo, Jin verfasserin aut Lyu, Yinong verfasserin aut Enthalten in No title available 164, Seite 198-204 (DE-627)569616417 1005-0302 nnns volume:164 pages:198-204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 164 198-204 |
| spelling |
10.1016/j.jmst.2023.05.015 doi (DE-627)ELV063332426 (ELSEVIER)S1005-0302(23)00486-3 DE-627 ger DE-627 rda eng Chen, Fujun verfasserin aut Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt Qian, Hao verfasserin aut Sun, Xiaoyuan verfasserin aut Zheng, Tianyang verfasserin aut Liu, Yunfei verfasserin aut Luo, Jin verfasserin aut Lyu, Yinong verfasserin aut Enthalten in No title available 164, Seite 198-204 (DE-627)569616417 1005-0302 nnns volume:164 pages:198-204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 164 198-204 |
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10.1016/j.jmst.2023.05.015 doi (DE-627)ELV063332426 (ELSEVIER)S1005-0302(23)00486-3 DE-627 ger DE-627 rda eng Chen, Fujun verfasserin aut Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt Qian, Hao verfasserin aut Sun, Xiaoyuan verfasserin aut Zheng, Tianyang verfasserin aut Liu, Yunfei verfasserin aut Luo, Jin verfasserin aut Lyu, Yinong verfasserin aut Enthalten in No title available 164, Seite 198-204 (DE-627)569616417 1005-0302 nnns volume:164 pages:198-204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 164 198-204 |
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10.1016/j.jmst.2023.05.015 doi (DE-627)ELV063332426 (ELSEVIER)S1005-0302(23)00486-3 DE-627 ger DE-627 rda eng Chen, Fujun verfasserin aut Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt Qian, Hao verfasserin aut Sun, Xiaoyuan verfasserin aut Zheng, Tianyang verfasserin aut Liu, Yunfei verfasserin aut Luo, Jin verfasserin aut Lyu, Yinong verfasserin aut Enthalten in No title available 164, Seite 198-204 (DE-627)569616417 1005-0302 nnns volume:164 pages:198-204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 164 198-204 |
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10.1016/j.jmst.2023.05.015 doi (DE-627)ELV063332426 (ELSEVIER)S1005-0302(23)00486-3 DE-627 ger DE-627 rda eng Chen, Fujun verfasserin aut Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt Qian, Hao verfasserin aut Sun, Xiaoyuan verfasserin aut Zheng, Tianyang verfasserin aut Liu, Yunfei verfasserin aut Luo, Jin verfasserin aut Lyu, Yinong verfasserin aut Enthalten in No title available 164, Seite 198-204 (DE-627)569616417 1005-0302 nnns volume:164 pages:198-204 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 164 198-204 |
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Enthalten in No title available 164, Seite 198-204 volume:164 pages:198-204 |
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Chen, Fujun @@aut@@ Qian, Hao @@aut@@ Sun, Xiaoyuan @@aut@@ Zheng, Tianyang @@aut@@ Liu, Yunfei @@aut@@ Luo, Jin @@aut@@ Lyu, Yinong @@aut@@ |
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| author |
Chen, Fujun |
| spellingShingle |
Chen, Fujun misc Hydrothermal synthesis misc Growth mechanism misc Interfacial coupling misc AC-STEM misc Octahedral tilt Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis |
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Chen, Fujun |
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1005-0302 |
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Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt |
| topic |
misc Hydrothermal synthesis misc Growth mechanism misc Interfacial coupling misc AC-STEM misc Octahedral tilt |
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misc Hydrothermal synthesis misc Growth mechanism misc Interfacial coupling misc AC-STEM misc Octahedral tilt |
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misc Hydrothermal synthesis misc Growth mechanism misc Interfacial coupling misc AC-STEM misc Octahedral tilt |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis |
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Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis |
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Chen, Fujun |
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2023 |
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198 |
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Chen, Fujun Qian, Hao Sun, Xiaoyuan Zheng, Tianyang Liu, Yunfei Luo, Jin Lyu, Yinong |
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164 |
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Elektronische Aufsätze |
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Chen, Fujun |
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10.1016/j.jmst.2023.05.015 |
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verfasserin |
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atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of bnt film prepared by hydrothermal synthesis |
| title_auth |
Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis |
| abstract |
Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. |
| abstractGer |
Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. |
| abstract_unstemmed |
Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a “structure-property” bridge for the design of microelectronic devices. Here, the epitaxial growth mechanism and the interfacial coupling in Bi0.5Na0.5TiO3/SrTiO3 (BNT/STO) heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy, which is synthesized by a hydrothermal method. The results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of elements. The uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice distortion. However, the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial strain. Additionally, the oxygen octahedral tilt exhibits continuous tilt patterns of a 0 a 0 a 0 - a − b 0 c − - a 0 a 0 c − - a 0 b − c − - a − b − c − from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation displacement. These results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films. |
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| title_short |
Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis |
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Qian, Hao Sun, Xiaoyuan Zheng, Tianyang Liu, Yunfei Luo, Jin Lyu, Yinong |
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Qian, Hao Sun, Xiaoyuan Zheng, Tianyang Liu, Yunfei Luo, Jin Lyu, Yinong |
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| doi_str |
10.1016/j.jmst.2023.05.015 |
| up_date |
2024-07-06T19:34:26.194Z |
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