Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy

The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by dep...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Zhang, Chengwei [verfasserIn] Wen, Kai [verfasserIn] Gao, Yan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding

Übergeordnetes Werk:	Enthalten in: Applied surface science - Amsterdam : Elsevier, 1985, 617
Übergeordnetes Werk:	volume:617

DOI / URN:	10.1016/j.apsusc.2023.156614

Katalog-ID:	ELV063353563

Internformat


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520			\|a The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth.
650		4	\|a TA17 titanium alloy
650		4	\|a Surface nanocrystallization
650		4	\|a Active screen plasma nitriding
700	1		\|a Wen, Kai \|e verfasserin \|4 aut
700	1		\|a Gao, Yan \|e verfasserin \|4 aut
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publishDate	2023
allfields	10.1016/j.apsusc.2023.156614 doi (DE-627)ELV063353563 (ELSEVIER)S0169-4332(23)00290-8 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Zhang, Chengwei verfasserin aut Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth. TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding Wen, Kai verfasserin aut Gao, Yan verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 617 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:617 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 617
spelling	10.1016/j.apsusc.2023.156614 doi (DE-627)ELV063353563 (ELSEVIER)S0169-4332(23)00290-8 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Zhang, Chengwei verfasserin aut Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth. TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding Wen, Kai verfasserin aut Gao, Yan verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 617 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:617 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 617
allfields_unstemmed	10.1016/j.apsusc.2023.156614 doi (DE-627)ELV063353563 (ELSEVIER)S0169-4332(23)00290-8 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Zhang, Chengwei verfasserin aut Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth. TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding Wen, Kai verfasserin aut Gao, Yan verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 617 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:617 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 617
allfieldsGer	10.1016/j.apsusc.2023.156614 doi (DE-627)ELV063353563 (ELSEVIER)S0169-4332(23)00290-8 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Zhang, Chengwei verfasserin aut Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth. TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding Wen, Kai verfasserin aut Gao, Yan verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 617 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:617 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 617
allfieldsSound	10.1016/j.apsusc.2023.156614 doi (DE-627)ELV063353563 (ELSEVIER)S0169-4332(23)00290-8 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Zhang, Chengwei verfasserin aut Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth. TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding Wen, Kai verfasserin aut Gao, Yan verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 617 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:617 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 617
language	English
source	Enthalten in Applied surface science 617 volume:617
sourceStr	Enthalten in Applied surface science 617 volume:617
format_phy_str_mv	Article
bklname	Oberflächen Dünne Schichten Grenzflächen Kolloidchemie Grenzflächenchemie Oberflächentechnik Wärmebehandlung
institution	findex.gbv.de
topic_facet	TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding
dewey-raw	670
isfreeaccess_bool	false
container_title	Applied surface science
authorswithroles_txt_mv	Zhang, Chengwei @@aut@@ Wen, Kai @@aut@@ Gao, Yan @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	312151128
dewey-sort	3670
id	ELV063353563
language_de	englisch
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author	Zhang, Chengwei
spellingShingle	Zhang, Chengwei ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc TA17 titanium alloy misc Surface nanocrystallization misc Active screen plasma nitriding Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy
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topic_title	670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy TA17 titanium alloy Surface nanocrystallization Active screen plasma nitriding
topic	ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc TA17 titanium alloy misc Surface nanocrystallization misc Active screen plasma nitriding
topic_unstemmed	ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc TA17 titanium alloy misc Surface nanocrystallization misc Active screen plasma nitriding
topic_browse	ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc TA17 titanium alloy misc Surface nanocrystallization misc Active screen plasma nitriding
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title	Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy
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title_full	Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy
author_sort	Zhang, Chengwei
journal	Applied surface science
journalStr	Applied surface science
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author_browse	Zhang, Chengwei Wen, Kai Gao, Yan
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class	670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl
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author-letter	Zhang, Chengwei
doi_str_mv	10.1016/j.apsusc.2023.156614
dewey-full	670 530 660
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title_sort	columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy
title_auth	Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy
abstract	The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth.
abstractGer	The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth.
abstract_unstemmed	The microstructure and formation mechanism of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline TA17 titanium alloy were studied by TEM. The nitrided layer of both the original and shot-peened TA17 samples was composed of two sublayers: the outer TiN layer formed by deposition of titanium nitride particles and the inner Ti2N layer formed by nitrogen diffusion into the titanium substrate. The Ti2N layer was found to be an Al-depleted zone, which was a proof for its formation mode of nitrogen diffusion. Compared with the TiN layer of the original sample filled with columnar grains, the TiN layer of the shot-peened sample was composed of mainly equiaxed nanograins and a small amount of columnar grains. The large number of high-energy grain boundaries on the shot-peened surface provided numerous nucleation sites, resulting in the formation of equiaxed nanocrystalline TiN. During long term nitriding, most of the nano-scale TiN grains were maintained due to their high thermal stability, while the nano grains of the shot-peened substrate surface grew into microscale due to their low thermal stability. With the thickening of the nitrided layer, some equiaxed TiN nanograins grew into columns perpendicular to the substrate surface due to competitive growth.
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title_short	Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy
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up_date	2024-07-06T19:35:33.490Z
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Columnar and nanocrystalline combined microstructure of the nitrided layer by active screen plasma nitriding on surface-nanocrystalline titanium alloy

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