Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound

Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Huang, Zhe [verfasserIn] Wu, Siyuan [verfasserIn] Chen, Baishan [verfasserIn] Tang, Siwei [verfasserIn] Ma, Yunzhu [verfasserIn] Liu, Wensheng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	CZT Defects Precipitates Infrared transmittance Resistivity

Übergeordnetes Werk:	Enthalten in: Vacuum - Amsterdam [u.a.] : Elsevier Science, 1951, 217
Übergeordnetes Werk:	volume:217

DOI / URN:	10.1016/j.vacuum.2023.112519

Katalog-ID:	ELV064416127

Internformat


LEADER	01000caa a22002652 4500
001	ELV064416127
003	DE-627
005	20231117093209.0
007	cr uuu---uuuuu
008	230916s2023 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.vacuum.2023.112519 \|2 doi
035			\|a (DE-627)ELV064416127
035			\|a (ELSEVIER)S0042-207X(23)00716-9
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 530 \|q VZ
084			\|a 58.19 \|2 bkl
084			\|a 33.09 \|2 bkl
084			\|a 52.78 \|2 bkl
100	1		\|a Huang, Zhe \|e verfasserin \|4 aut
245	1	0	\|a Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound
264		1	\|c 2023
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.
650		4	\|a CZT
650		4	\|a Defects
650		4	\|a Precipitates
650		4	\|a Infrared transmittance
650		4	\|a Resistivity
700	1		\|a Wu, Siyuan \|e verfasserin \|4 aut
700	1		\|a Chen, Baishan \|e verfasserin \|4 aut
700	1		\|a Tang, Siwei \|e verfasserin \|0 (orcid)0000-0003-2903-3298 \|4 aut
700	1		\|a Ma, Yunzhu \|e verfasserin \|4 aut
700	1		\|a Liu, Wensheng \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Vacuum \|d Amsterdam [u.a.] : Elsevier Science, 1951 \|g 217 \|h Online-Ressource \|w (DE-627)271176393 \|w (DE-600)1479044-0 \|w (DE-576)114088187 \|x 0042-207X \|7 nnns
773	1	8	\|g volume:217
912			\|a GBV_USEFLAG_U
912			\|a GBV_ELV
912			\|a SYSFLAG_U
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
936	b	k	\|a 58.19 \|j Verfahrenstechnik: Sonstiges \|q VZ
936	b	k	\|a 33.09 \|j Physik unter besonderen Bedingungen \|q VZ
936	b	k	\|a 52.78 \|j Oberflächentechnik \|j Wärmebehandlung \|q VZ
951			\|a AR
952			\|d 217

Indexfelder

author_variant	z h zh s w sw b c bc s t st y m ym w l wl
matchkey_str	article:0042207X:2023----::alrnteeetadeitvticztsnlcytlioetpn
hierarchy_sort_str	2023
bklnumber	58.19 33.09 52.78
publishDate	2023
allfields	10.1016/j.vacuum.2023.112519 doi (DE-627)ELV064416127 (ELSEVIER)S0042-207X(23)00716-9 DE-627 ger DE-627 rda eng 530 VZ 58.19 bkl 33.09 bkl 52.78 bkl Huang, Zhe verfasserin aut Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies. CZT Defects Precipitates Infrared transmittance Resistivity Wu, Siyuan verfasserin aut Chen, Baishan verfasserin aut Tang, Siwei verfasserin (orcid)0000-0003-2903-3298 aut Ma, Yunzhu verfasserin aut Liu, Wensheng verfasserin aut Enthalten in Vacuum Amsterdam [u.a.] : Elsevier Science, 1951 217 Online-Ressource (DE-627)271176393 (DE-600)1479044-0 (DE-576)114088187 0042-207X nnns volume:217 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.19 Verfahrenstechnik: Sonstiges VZ 33.09 Physik unter besonderen Bedingungen VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 217
spelling	10.1016/j.vacuum.2023.112519 doi (DE-627)ELV064416127 (ELSEVIER)S0042-207X(23)00716-9 DE-627 ger DE-627 rda eng 530 VZ 58.19 bkl 33.09 bkl 52.78 bkl Huang, Zhe verfasserin aut Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies. CZT Defects Precipitates Infrared transmittance Resistivity Wu, Siyuan verfasserin aut Chen, Baishan verfasserin aut Tang, Siwei verfasserin (orcid)0000-0003-2903-3298 aut Ma, Yunzhu verfasserin aut Liu, Wensheng verfasserin aut Enthalten in Vacuum Amsterdam [u.a.] : Elsevier Science, 1951 217 Online-Ressource (DE-627)271176393 (DE-600)1479044-0 (DE-576)114088187 0042-207X nnns volume:217 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.19 Verfahrenstechnik: Sonstiges VZ 33.09 Physik unter besonderen Bedingungen VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 217
allfields_unstemmed	10.1016/j.vacuum.2023.112519 doi (DE-627)ELV064416127 (ELSEVIER)S0042-207X(23)00716-9 DE-627 ger DE-627 rda eng 530 VZ 58.19 bkl 33.09 bkl 52.78 bkl Huang, Zhe verfasserin aut Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies. CZT Defects Precipitates Infrared transmittance Resistivity Wu, Siyuan verfasserin aut Chen, Baishan verfasserin aut Tang, Siwei verfasserin (orcid)0000-0003-2903-3298 aut Ma, Yunzhu verfasserin aut Liu, Wensheng verfasserin aut Enthalten in Vacuum Amsterdam [u.a.] : Elsevier Science, 1951 217 Online-Ressource (DE-627)271176393 (DE-600)1479044-0 (DE-576)114088187 0042-207X nnns volume:217 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.19 Verfahrenstechnik: Sonstiges VZ 33.09 Physik unter besonderen Bedingungen VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 217
allfieldsGer	10.1016/j.vacuum.2023.112519 doi (DE-627)ELV064416127 (ELSEVIER)S0042-207X(23)00716-9 DE-627 ger DE-627 rda eng 530 VZ 58.19 bkl 33.09 bkl 52.78 bkl Huang, Zhe verfasserin aut Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies. CZT Defects Precipitates Infrared transmittance Resistivity Wu, Siyuan verfasserin aut Chen, Baishan verfasserin aut Tang, Siwei verfasserin (orcid)0000-0003-2903-3298 aut Ma, Yunzhu verfasserin aut Liu, Wensheng verfasserin aut Enthalten in Vacuum Amsterdam [u.a.] : Elsevier Science, 1951 217 Online-Ressource (DE-627)271176393 (DE-600)1479044-0 (DE-576)114088187 0042-207X nnns volume:217 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.19 Verfahrenstechnik: Sonstiges VZ 33.09 Physik unter besonderen Bedingungen VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 217
allfieldsSound	10.1016/j.vacuum.2023.112519 doi (DE-627)ELV064416127 (ELSEVIER)S0042-207X(23)00716-9 DE-627 ger DE-627 rda eng 530 VZ 58.19 bkl 33.09 bkl 52.78 bkl Huang, Zhe verfasserin aut Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies. CZT Defects Precipitates Infrared transmittance Resistivity Wu, Siyuan verfasserin aut Chen, Baishan verfasserin aut Tang, Siwei verfasserin (orcid)0000-0003-2903-3298 aut Ma, Yunzhu verfasserin aut Liu, Wensheng verfasserin aut Enthalten in Vacuum Amsterdam [u.a.] : Elsevier Science, 1951 217 Online-Ressource (DE-627)271176393 (DE-600)1479044-0 (DE-576)114088187 0042-207X nnns volume:217 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 58.19 Verfahrenstechnik: Sonstiges VZ 33.09 Physik unter besonderen Bedingungen VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 217
language	English
source	Enthalten in Vacuum 217 volume:217
sourceStr	Enthalten in Vacuum 217 volume:217
format_phy_str_mv	Article
bklname	Verfahrenstechnik: Sonstiges Physik unter besonderen Bedingungen Oberflächentechnik Wärmebehandlung
institution	findex.gbv.de
topic_facet	CZT Defects Precipitates Infrared transmittance Resistivity
dewey-raw	530
isfreeaccess_bool	false
container_title	Vacuum
authorswithroles_txt_mv	Huang, Zhe @@aut@@ Wu, Siyuan @@aut@@ Chen, Baishan @@aut@@ Tang, Siwei @@aut@@ Ma, Yunzhu @@aut@@ Liu, Wensheng @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	271176393
dewey-sort	3530
id	ELV064416127
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV064416127</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231117093209.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230916s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.vacuum.2023.112519</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV064416127</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0042-207X(23)00716-9</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">58.19</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.78</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Huang, Zhe</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CZT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Defects</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Precipitates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Infrared transmittance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistivity</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Siyuan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Baishan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Siwei</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-2903-3298</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Yunzhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Wensheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Vacuum</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1951</subfield><subfield code="g">217</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)271176393</subfield><subfield code="w">(DE-600)1479044-0</subfield><subfield code="w">(DE-576)114088187</subfield><subfield code="x">0042-207X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:217</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">58.19</subfield><subfield code="j">Verfahrenstechnik: Sonstiges</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.09</subfield><subfield code="j">Physik unter besonderen Bedingungen</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">52.78</subfield><subfield code="j">Oberflächentechnik</subfield><subfield code="j">Wärmebehandlung</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">217</subfield></datafield></record></collection>
author	Huang, Zhe
spellingShingle	Huang, Zhe ddc 530 bkl 58.19 bkl 33.09 bkl 52.78 misc CZT misc Defects misc Precipitates misc Infrared transmittance misc Resistivity Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound
authorStr	Huang, Zhe
ppnlink_with_tag_str_mv	@@773@@(DE-627)271176393
format	electronic Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut aut aut aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
issn	0042-207X
topic_title	530 VZ 58.19 bkl 33.09 bkl 52.78 bkl Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound CZT Defects Precipitates Infrared transmittance Resistivity
topic	ddc 530 bkl 58.19 bkl 33.09 bkl 52.78 misc CZT misc Defects misc Precipitates misc Infrared transmittance misc Resistivity
topic_unstemmed	ddc 530 bkl 58.19 bkl 33.09 bkl 52.78 misc CZT misc Defects misc Precipitates misc Infrared transmittance misc Resistivity
topic_browse	ddc 530 bkl 58.19 bkl 33.09 bkl 52.78 misc CZT misc Defects misc Precipitates misc Infrared transmittance misc Resistivity
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Vacuum
hierarchy_parent_id	271176393
dewey-tens	530 - Physics
hierarchy_top_title	Vacuum
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)271176393 (DE-600)1479044-0 (DE-576)114088187
title	Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound
ctrlnum	(DE-627)ELV064416127 (ELSEVIER)S0042-207X(23)00716-9
title_full	Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound
author_sort	Huang, Zhe
journal	Vacuum
journalStr	Vacuum
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2023
contenttype_str_mv	zzz
author_browse	Huang, Zhe Wu, Siyuan Chen, Baishan Tang, Siwei Ma, Yunzhu Liu, Wensheng
container_volume	217
class	530 VZ 58.19 bkl 33.09 bkl 52.78 bkl
format_se	Elektronische Aufsätze
author-letter	Huang, Zhe
doi_str_mv	10.1016/j.vacuum.2023.112519
normlink	(ORCID)0000-0003-2903-3298
normlink_prefix_str_mv	(orcid)0000-0003-2903-3298
dewey-full	530
author2-role	verfasserin
title_sort	tailoring the defects and resistivity in cdznte single crystal via one-step annealing with cdte compound
title_auth	Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound
abstract	Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.
abstractGer	Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.
abstract_unstemmed	Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.
collection_details	GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700
title_short	Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound
remote_bool	true
author2	Wu, Siyuan Chen, Baishan Tang, Siwei Ma, Yunzhu Liu, Wensheng
author2Str	Wu, Siyuan Chen, Baishan Tang, Siwei Ma, Yunzhu Liu, Wensheng
ppnlink	271176393
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.vacuum.2023.112519
up_date	2024-07-06T20:26:08.774Z
_version_	1803862743475814400
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV064416127</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231117093209.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">230916s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.vacuum.2023.112519</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV064416127</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0042-207X(23)00716-9</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">58.19</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.78</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Huang, Zhe</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Defects deteriorate the optical and electronic properties of the cadmium zinc telluride (CZT) single crystal. However, the growth of defects, such as vacancies and precipitation, could not be avoided in the industrial-grade preparation of CZT single crystal. Therefore, it is crucial to explore ways to eliminate defects after growth. This paper employs one-step heat treatment with the CdTe compound as an annealing atmosphere source. After annealing, some large-size Te inclusions are eliminated in CZT crystal, but nano Te precipitates still exist. At the same time, the crystal surface becomes rougher, caused by the thermal migration of Te droplets, dislocation proliferation, and aggregation. Increasing annealing time, dislocations migrate, decompose, and interact with each other to form dislocation walls, stacking faults or terminating at the surface, reducing dislocation etch pit density. In addition, a large number of ordered phases are still found in the crystal. Single annealing with CdTe significantly improved the crystal's optical and electrical properties. After 180 h annealing, the infrared (IR) transmittance of the as-grown wafer increased from 40% to 65%, and resistivity increased from 2.2 × 109 Ω cm to 1.7 × 1011 Ω cm. Compared to reducing the Te precipitation phase, these increasements were mainly dominated by replacing point defects, like Cd vacancies.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CZT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Defects</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Precipitates</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Infrared transmittance</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistivity</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Siyuan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Baishan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tang, Siwei</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-2903-3298</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ma, Yunzhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Wensheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Vacuum</subfield><subfield code="d">Amsterdam [u.a.] : Elsevier Science, 1951</subfield><subfield code="g">217</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)271176393</subfield><subfield code="w">(DE-600)1479044-0</subfield><subfield code="w">(DE-576)114088187</subfield><subfield code="x">0042-207X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:217</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">58.19</subfield><subfield code="j">Verfahrenstechnik: Sonstiges</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.09</subfield><subfield code="j">Physik unter besonderen Bedingungen</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">52.78</subfield><subfield code="j">Oberflächentechnik</subfield><subfield code="j">Wärmebehandlung</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">217</subfield></datafield></record></collection>
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Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound

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