A HCI self-healing circuit of a bandgap reference circuit with curvature compensation
In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coeffi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhang, Jun-an [verfasserIn] Li, Chao [verfasserIn] Li, Dan [verfasserIn] Zhang, Chuandao [verfasserIn] Li, Tiehu [verfasserIn] Lu, Yunhua [verfasserIn] Zhang, Qingwei [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Microelectronics reliability - Amsterdam [u.a.] : Elsevier, 1962, 149 |
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| Übergeordnetes Werk: |
volume:149 |
| DOI / URN: |
10.1016/j.microrel.2023.115225 |
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| Katalog-ID: |
ELV064817571 |
|---|
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| 245 | 1 | 0 | |a A HCI self-healing circuit of a bandgap reference circuit with curvature compensation |
| 264 | 1 | |c 2023 | |
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| 337 | |a Computermedien |b c |2 rdamedia | ||
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| 520 | |a In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. | ||
| 650 | 4 | |a Bandgap reference | |
| 650 | 4 | |a Hot carrier injection | |
| 650 | 4 | |a Temperature coefficient | |
| 650 | 4 | |a Degradation | |
| 650 | 4 | |a Self-healing | |
| 700 | 1 | |a Li, Chao |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Dan |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Chuandao |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Tiehu |e verfasserin |4 aut | |
| 700 | 1 | |a Lu, Yunhua |e verfasserin |4 aut | |
| 700 | 1 | |a Zhang, Qingwei |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Microelectronics reliability |d Amsterdam [u.a.] : Elsevier, 1962 |g 149 |h Online-Ressource |w (DE-627)320616185 |w (DE-600)2022028-5 |w (DE-576)259485268 |x 0026-2714 |7 nnns |
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2023 |
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10.1016/j.microrel.2023.115225 doi (DE-627)ELV064817571 (ELSEVIER)S0026-2714(23)00325-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 50.16 bkl Zhang, Jun-an verfasserin aut A HCI self-healing circuit of a bandgap reference circuit with curvature compensation 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing Li, Chao verfasserin aut Li, Dan verfasserin aut Zhang, Chuandao verfasserin aut Li, Tiehu verfasserin aut Lu, Yunhua verfasserin aut Zhang, Qingwei verfasserin aut Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1962 149 Online-Ressource (DE-627)320616185 (DE-600)2022028-5 (DE-576)259485268 0026-2714 nnns volume:149 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 50.16 Technische Zuverlässigkeit Instandhaltung VZ AR 149 |
| spelling |
10.1016/j.microrel.2023.115225 doi (DE-627)ELV064817571 (ELSEVIER)S0026-2714(23)00325-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 50.16 bkl Zhang, Jun-an verfasserin aut A HCI self-healing circuit of a bandgap reference circuit with curvature compensation 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing Li, Chao verfasserin aut Li, Dan verfasserin aut Zhang, Chuandao verfasserin aut Li, Tiehu verfasserin aut Lu, Yunhua verfasserin aut Zhang, Qingwei verfasserin aut Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1962 149 Online-Ressource (DE-627)320616185 (DE-600)2022028-5 (DE-576)259485268 0026-2714 nnns volume:149 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 50.16 Technische Zuverlässigkeit Instandhaltung VZ AR 149 |
| allfields_unstemmed |
10.1016/j.microrel.2023.115225 doi (DE-627)ELV064817571 (ELSEVIER)S0026-2714(23)00325-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 50.16 bkl Zhang, Jun-an verfasserin aut A HCI self-healing circuit of a bandgap reference circuit with curvature compensation 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing Li, Chao verfasserin aut Li, Dan verfasserin aut Zhang, Chuandao verfasserin aut Li, Tiehu verfasserin aut Lu, Yunhua verfasserin aut Zhang, Qingwei verfasserin aut Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1962 149 Online-Ressource (DE-627)320616185 (DE-600)2022028-5 (DE-576)259485268 0026-2714 nnns volume:149 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 50.16 Technische Zuverlässigkeit Instandhaltung VZ AR 149 |
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10.1016/j.microrel.2023.115225 doi (DE-627)ELV064817571 (ELSEVIER)S0026-2714(23)00325-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 50.16 bkl Zhang, Jun-an verfasserin aut A HCI self-healing circuit of a bandgap reference circuit with curvature compensation 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing Li, Chao verfasserin aut Li, Dan verfasserin aut Zhang, Chuandao verfasserin aut Li, Tiehu verfasserin aut Lu, Yunhua verfasserin aut Zhang, Qingwei verfasserin aut Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1962 149 Online-Ressource (DE-627)320616185 (DE-600)2022028-5 (DE-576)259485268 0026-2714 nnns volume:149 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 50.16 Technische Zuverlässigkeit Instandhaltung VZ AR 149 |
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10.1016/j.microrel.2023.115225 doi (DE-627)ELV064817571 (ELSEVIER)S0026-2714(23)00325-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 50.16 bkl Zhang, Jun-an verfasserin aut A HCI self-healing circuit of a bandgap reference circuit with curvature compensation 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing Li, Chao verfasserin aut Li, Dan verfasserin aut Zhang, Chuandao verfasserin aut Li, Tiehu verfasserin aut Lu, Yunhua verfasserin aut Zhang, Qingwei verfasserin aut Enthalten in Microelectronics reliability Amsterdam [u.a.] : Elsevier, 1962 149 Online-Ressource (DE-627)320616185 (DE-600)2022028-5 (DE-576)259485268 0026-2714 nnns volume:149 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 50.16 Technische Zuverlässigkeit Instandhaltung VZ AR 149 |
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Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing |
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Zhang, Jun-an @@aut@@ Li, Chao @@aut@@ Li, Dan @@aut@@ Zhang, Chuandao @@aut@@ Li, Tiehu @@aut@@ Lu, Yunhua @@aut@@ Zhang, Qingwei @@aut@@ |
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Zhang, Jun-an |
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Zhang, Jun-an ddc 620 bkl 53.55 bkl 53.52 bkl 50.16 misc Bandgap reference misc Hot carrier injection misc Temperature coefficient misc Degradation misc Self-healing A HCI self-healing circuit of a bandgap reference circuit with curvature compensation |
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620 VZ 53.55 bkl 53.52 bkl 50.16 bkl A HCI self-healing circuit of a bandgap reference circuit with curvature compensation Bandgap reference Hot carrier injection Temperature coefficient Degradation Self-healing |
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Zhang, Jun-an Li, Chao Li, Dan Zhang, Chuandao Li, Tiehu Lu, Yunhua Zhang, Qingwei |
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a hci self-healing circuit of a bandgap reference circuit with curvature compensation |
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A HCI self-healing circuit of a bandgap reference circuit with curvature compensation |
| abstract |
In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. |
| abstractGer |
In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. |
| abstract_unstemmed |
In this paper, the performance degradation of a bandgap reference circuit with curvature compensation under the hot carrier injection (HCI) effect is studied, and a self-healing circuit is proposed. The intrinsic performance of the curvature compensation bandgap circuit achieved a temperature coefficient (TC) of 1.949 ppm/°C and an output reference voltage of 384.748 mV under a 1.2 V power supply voltage between −40 °C to 125 °C. The TC of the reference circuit will increase to 8.033 ppm/°C and the output reference voltage decreases to 384.318 mV after 50 years under the HCI effect. The study found that the gain decrease of the op-amp in the reference circuit leads to a decrease in the output voltage, and the decrease of the compensation current in the curvature compensation circuit leads to the degradation of the TC. A self-healing circuit is designed to mitigate the impact of the HCI effect. The simulation results show that the TC of the self-healing reference circuit is 3.934 ppm/°C and the output reference voltage is 384.655 mV after 50 years under the HCI effect. |
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|
| score |
7.400194 |