A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance

A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Qi, Yu [verfasserIn] Kines, Michael [verfasserIn] Ellicott, Samuel [verfasserIn] Khalil, Waleed [verfasserIn] Lavasani, Hossein Miri [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based

Übergeordnetes Werk:	Enthalten in: Microelectronics journal - Amsterdam [u.a.] : Elsevier Science, 1989, 140
Übergeordnetes Werk:	volume:140

DOI / URN:	10.1016/j.mejo.2023.105914

Katalog-ID:	ELV064849694

Internformat


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024	7		\|a 10.1016/j.mejo.2023.105914 \|2 doi
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100	1		\|a Qi, Yu \|e verfasserin \|0 (orcid)0000-0001-9538-4278 \|4 aut
245	1	0	\|a A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance
264		1	\|c 2023
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range.
650		4	\|a Phase shifter
650		4	\|a Miller capacitance
650		4	\|a Low-power
650		4	\|a Compact
650		4	\|a CMOS
650		4	\|a Inverter-based
700	1		\|a Kines, Michael \|e verfasserin \|4 aut
700	1		\|a Ellicott, Samuel \|e verfasserin \|4 aut
700	1		\|a Khalil, Waleed \|e verfasserin \|4 aut
700	1		\|a Lavasani, Hossein Miri \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Microelectronics journal \|d Amsterdam [u.a.] : Elsevier Science, 1989 \|g 140 \|h Online-Ressource \|w (DE-627)320405079 \|w (DE-600)2000567-2 \|w (DE-576)259484350 \|7 nnns
773	1	8	\|g volume:140
912			\|a GBV_USEFLAG_U
912			\|a GBV_ELV
912			\|a SYSFLAG_U
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
936	b	k	\|a 53.55 \|j Mikroelektronik \|q VZ
936	b	k	\|a 53.52 \|j Elektronische Schaltungen \|q VZ
936	b	k	\|a 33.61 \|j Festkörperphysik \|q VZ
936	b	k	\|a 33.72 \|j Halbleiterphysik \|q VZ
951			\|a AR
952			\|d 140

Indexfelder

author_variant	y q yq m k mk s e se w k wk h m l hm hml
matchkey_str	qiyukinesmichaelellicottsamuelkhalilwale:2023----:2gzopwrncmatbtciehssitrtlzn
hierarchy_sort_str	2023
bklnumber	53.55 53.52 33.61 33.72
publishDate	2023
allfields	10.1016/j.mejo.2023.105914 doi (DE-627)ELV064849694 (ELSEVIER)S0026-2692(23)00227-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Qi, Yu verfasserin (orcid)0000-0001-9538-4278 aut A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range. Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based Kines, Michael verfasserin aut Ellicott, Samuel verfasserin aut Khalil, Waleed verfasserin aut Lavasani, Hossein Miri verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 140 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:140 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 140
spelling	10.1016/j.mejo.2023.105914 doi (DE-627)ELV064849694 (ELSEVIER)S0026-2692(23)00227-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Qi, Yu verfasserin (orcid)0000-0001-9538-4278 aut A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range. Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based Kines, Michael verfasserin aut Ellicott, Samuel verfasserin aut Khalil, Waleed verfasserin aut Lavasani, Hossein Miri verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 140 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:140 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 140
allfields_unstemmed	10.1016/j.mejo.2023.105914 doi (DE-627)ELV064849694 (ELSEVIER)S0026-2692(23)00227-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Qi, Yu verfasserin (orcid)0000-0001-9538-4278 aut A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range. Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based Kines, Michael verfasserin aut Ellicott, Samuel verfasserin aut Khalil, Waleed verfasserin aut Lavasani, Hossein Miri verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 140 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:140 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 140
allfieldsGer	10.1016/j.mejo.2023.105914 doi (DE-627)ELV064849694 (ELSEVIER)S0026-2692(23)00227-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Qi, Yu verfasserin (orcid)0000-0001-9538-4278 aut A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range. Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based Kines, Michael verfasserin aut Ellicott, Samuel verfasserin aut Khalil, Waleed verfasserin aut Lavasani, Hossein Miri verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 140 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:140 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 140
allfieldsSound	10.1016/j.mejo.2023.105914 doi (DE-627)ELV064849694 (ELSEVIER)S0026-2692(23)00227-6 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Qi, Yu verfasserin (orcid)0000-0001-9538-4278 aut A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range. Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based Kines, Michael verfasserin aut Ellicott, Samuel verfasserin aut Khalil, Waleed verfasserin aut Lavasani, Hossein Miri verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 140 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:140 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 140
language	English
source	Enthalten in Microelectronics journal 140 volume:140
sourceStr	Enthalten in Microelectronics journal 140 volume:140
format_phy_str_mv	Article
bklname	Mikroelektronik Elektronische Schaltungen Festkörperphysik Halbleiterphysik
institution	findex.gbv.de
topic_facet	Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronics journal
authorswithroles_txt_mv	Qi, Yu @@aut@@ Kines, Michael @@aut@@ Ellicott, Samuel @@aut@@ Khalil, Waleed @@aut@@ Lavasani, Hossein Miri @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	320405079
dewey-sort	3620
id	ELV064849694
language_de	englisch
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author	Qi, Yu
spellingShingle	Qi, Yu ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc Phase shifter misc Miller capacitance misc Low-power misc Compact misc CMOS misc Inverter-based A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance
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topic_title	620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance Phase shifter Miller capacitance Low-power Compact CMOS Inverter-based
topic	ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc Phase shifter misc Miller capacitance misc Low-power misc Compact misc CMOS misc Inverter-based
topic_unstemmed	ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc Phase shifter misc Miller capacitance misc Low-power misc Compact misc CMOS misc Inverter-based
topic_browse	ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc Phase shifter misc Miller capacitance misc Low-power misc Compact misc CMOS misc Inverter-based
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title	A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance
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title_full	A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance
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author_browse	Qi, Yu Kines, Michael Ellicott, Samuel Khalil, Waleed Lavasani, Hossein Miri
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doi_str_mv	10.1016/j.mejo.2023.105914
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title_sort	a 2.4 ghz low-power and compact 3-bit active phase shifter utilizing miller capacitance
title_auth	A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance
abstract	A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range.
abstractGer	A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range.
abstract_unstemmed	A low-power and compact 3-bit active phase shifter is designed and implemented in a 22 nm FDSOI CMOS process. A modified inverter-based topology, which takes advantage of miller capacitance, is used to create a compact and low-power solution, resulting in ∼ 10 × and ∼ 90 × reduction in the power and chip area, respectively, for a given phase shift, compared to the standard inverter-based topology. At the same time, the proposed phase shifter exhibits less sensitivity to device mismatch. The proposed design measures ∼ 0.004 mm 2 , consumes 1.8 mW, and delivers up to 65°of phase shift with RMS phase and amplitude error of 3.85°and ±0.34 dB, respectively. The measured die-to-die variation is also confined to ±6.2°, which is < 10% of the full range.
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title_short	A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance
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author2	Kines, Michael Ellicott, Samuel Khalil, Waleed Lavasani, Hossein Miri
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doi_str	10.1016/j.mejo.2023.105914
up_date	2024-07-06T20:57:38.988Z
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A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance

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