Gas sensing with Nb(V) doped nanocrystalline TiO

The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operati...
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Autor*in:	Kuranov, Dmitriy [verfasserIn] Platonov, Vadim [verfasserIn] Konstantinova, Elizaveta [verfasserIn] Grebenkina, Anastasia [verfasserIn] Rumyantseva, Marina [verfasserIn] Polomoshnov, Sergei [verfasserIn] Krivetskiy, Valeriy [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone

Übergeordnetes Werk:	Enthalten in: Sensors and actuators / B - Amsterdam [u.a.] : Elsevier Science, 1990, 396
Übergeordnetes Werk:	volume:396

DOI / URN:	10.1016/j.snb.2023.134618

Katalog-ID:	ELV064868907

Internformat


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520			\|a The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation.
650		4	\|a Gas sensors
650		4	\|a Semiconductors
650		4	\|a Titanium dioxide
650		4	\|a Niobium
650		4	\|a Doping
650		4	\|a Stability
650		4	\|a Sub-ppm concentration
650		4	\|a Acetone
700	1		\|a Platonov, Vadim \|e verfasserin \|4 aut
700	1		\|a Konstantinova, Elizaveta \|e verfasserin \|4 aut
700	1		\|a Grebenkina, Anastasia \|e verfasserin \|4 aut
700	1		\|a Rumyantseva, Marina \|e verfasserin \|4 aut
700	1		\|a Polomoshnov, Sergei \|e verfasserin \|4 aut
700	1		\|a Krivetskiy, Valeriy \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Sensors and actuators <Lausanne> / B \|d Amsterdam [u.a.] : Elsevier Science, 1990 \|g 396 \|h Online-Ressource \|w (DE-627)306710358 \|w (DE-600)1500731-5 \|w (DE-576)082435855 \|x 0925-4005 \|7 nnns
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912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
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936	b	k	\|a 50.22 \|j Sensorik \|q VZ
936	b	k	\|a 35.07 \|j Chemisches Labor \|j chemische Methoden \|q VZ
951			\|a AR
952			\|d 396

Indexfelder

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bklnumber	50.22 35.07
publishDate	2023
allfields	10.1016/j.snb.2023.134618 doi (DE-627)ELV064868907 (ELSEVIER)S0925-4005(23)01333-3 DE-627 ger DE-627 rda eng 530 620 VZ 50.22 bkl 35.07 bkl Kuranov, Dmitriy verfasserin aut Gas sensing with Nb(V) doped nanocrystalline TiO 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation. Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone Platonov, Vadim verfasserin aut Konstantinova, Elizaveta verfasserin aut Grebenkina, Anastasia verfasserin aut Rumyantseva, Marina verfasserin aut Polomoshnov, Sergei verfasserin aut Krivetskiy, Valeriy verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 396 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:396 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.22 Sensorik VZ 35.07 Chemisches Labor chemische Methoden VZ AR 396
spelling	10.1016/j.snb.2023.134618 doi (DE-627)ELV064868907 (ELSEVIER)S0925-4005(23)01333-3 DE-627 ger DE-627 rda eng 530 620 VZ 50.22 bkl 35.07 bkl Kuranov, Dmitriy verfasserin aut Gas sensing with Nb(V) doped nanocrystalline TiO 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation. Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone Platonov, Vadim verfasserin aut Konstantinova, Elizaveta verfasserin aut Grebenkina, Anastasia verfasserin aut Rumyantseva, Marina verfasserin aut Polomoshnov, Sergei verfasserin aut Krivetskiy, Valeriy verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 396 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:396 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.22 Sensorik VZ 35.07 Chemisches Labor chemische Methoden VZ AR 396
allfields_unstemmed	10.1016/j.snb.2023.134618 doi (DE-627)ELV064868907 (ELSEVIER)S0925-4005(23)01333-3 DE-627 ger DE-627 rda eng 530 620 VZ 50.22 bkl 35.07 bkl Kuranov, Dmitriy verfasserin aut Gas sensing with Nb(V) doped nanocrystalline TiO 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation. Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone Platonov, Vadim verfasserin aut Konstantinova, Elizaveta verfasserin aut Grebenkina, Anastasia verfasserin aut Rumyantseva, Marina verfasserin aut Polomoshnov, Sergei verfasserin aut Krivetskiy, Valeriy verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 396 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:396 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.22 Sensorik VZ 35.07 Chemisches Labor chemische Methoden VZ AR 396
allfieldsGer	10.1016/j.snb.2023.134618 doi (DE-627)ELV064868907 (ELSEVIER)S0925-4005(23)01333-3 DE-627 ger DE-627 rda eng 530 620 VZ 50.22 bkl 35.07 bkl Kuranov, Dmitriy verfasserin aut Gas sensing with Nb(V) doped nanocrystalline TiO 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation. Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone Platonov, Vadim verfasserin aut Konstantinova, Elizaveta verfasserin aut Grebenkina, Anastasia verfasserin aut Rumyantseva, Marina verfasserin aut Polomoshnov, Sergei verfasserin aut Krivetskiy, Valeriy verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 396 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:396 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.22 Sensorik VZ 35.07 Chemisches Labor chemische Methoden VZ AR 396
allfieldsSound	10.1016/j.snb.2023.134618 doi (DE-627)ELV064868907 (ELSEVIER)S0925-4005(23)01333-3 DE-627 ger DE-627 rda eng 530 620 VZ 50.22 bkl 35.07 bkl Kuranov, Dmitriy verfasserin aut Gas sensing with Nb(V) doped nanocrystalline TiO 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation. Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone Platonov, Vadim verfasserin aut Konstantinova, Elizaveta verfasserin aut Grebenkina, Anastasia verfasserin aut Rumyantseva, Marina verfasserin aut Polomoshnov, Sergei verfasserin aut Krivetskiy, Valeriy verfasserin aut Enthalten in Sensors and actuators <Lausanne> / B Amsterdam [u.a.] : Elsevier Science, 1990 396 Online-Ressource (DE-627)306710358 (DE-600)1500731-5 (DE-576)082435855 0925-4005 nnns volume:396 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.22 Sensorik VZ 35.07 Chemisches Labor chemische Methoden VZ AR 396
language	English
source	Enthalten in Sensors and actuators <Lausanne> / B 396 volume:396
sourceStr	Enthalten in Sensors and actuators <Lausanne> / B 396 volume:396
format_phy_str_mv	Article
bklname	Sensorik Chemisches Labor chemische Methoden
institution	findex.gbv.de
topic_facet	Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone
dewey-raw	530
isfreeaccess_bool	false
container_title	Sensors and actuators <Lausanne> / B
authorswithroles_txt_mv	Kuranov, Dmitriy @@aut@@ Platonov, Vadim @@aut@@ Konstantinova, Elizaveta @@aut@@ Grebenkina, Anastasia @@aut@@ Rumyantseva, Marina @@aut@@ Polomoshnov, Sergei @@aut@@ Krivetskiy, Valeriy @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	306710358
dewey-sort	3530
id	ELV064868907
language_de	englisch
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author	Kuranov, Dmitriy
spellingShingle	Kuranov, Dmitriy ddc 530 bkl 50.22 bkl 35.07 misc Gas sensors misc Semiconductors misc Titanium dioxide misc Niobium misc Doping misc Stability misc Sub-ppm concentration misc Acetone Gas sensing with Nb(V) doped nanocrystalline TiO
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topic_title	530 620 VZ 50.22 bkl 35.07 bkl Gas sensing with Nb(V) doped nanocrystalline TiO Gas sensors Semiconductors Titanium dioxide Niobium Doping Stability Sub-ppm concentration Acetone
topic	ddc 530 bkl 50.22 bkl 35.07 misc Gas sensors misc Semiconductors misc Titanium dioxide misc Niobium misc Doping misc Stability misc Sub-ppm concentration misc Acetone
topic_unstemmed	ddc 530 bkl 50.22 bkl 35.07 misc Gas sensors misc Semiconductors misc Titanium dioxide misc Niobium misc Doping misc Stability misc Sub-ppm concentration misc Acetone
topic_browse	ddc 530 bkl 50.22 bkl 35.07 misc Gas sensors misc Semiconductors misc Titanium dioxide misc Niobium misc Doping misc Stability misc Sub-ppm concentration misc Acetone
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title	Gas sensing with Nb(V) doped nanocrystalline TiO
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title_full	Gas sensing with Nb(V) doped nanocrystalline TiO
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author_browse	Kuranov, Dmitriy Platonov, Vadim Konstantinova, Elizaveta Grebenkina, Anastasia Rumyantseva, Marina Polomoshnov, Sergei Krivetskiy, Valeriy
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doi_str_mv	10.1016/j.snb.2023.134618
dewey-full	530 620
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title_sort	gas sensing with nb(v) doped nanocrystalline tio
title_auth	Gas sensing with Nb(V) doped nanocrystalline TiO
abstract	The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation.
abstractGer	The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation.
abstract_unstemmed	The work addresses the problem of long- term stability of metal oxide materials gas sensor performance and deals with Nb(V) doped nanocrystalline TiO2 which is characterized by reasonable response values for practical application alongside with the absence of response decay during continuous operation. The TiO2 nanomaterials containing up to 4 at% Nb were synthesized using flame spray pyrolysis. Materials are investigated by XRD and EPR methods. The sensor properties were studied by in situ electrical conductivity measurements. Nb(V) reduces the electrical resistance of TiO2 due to the formation of oxygen vacancies and increase in conduction electron concentration, but this effect is limited by the appearance of a significant number of charge traps. Pure TiO2 tended to transform into rutile phase during annealing in the analyte gas mixture, while Nb stabilized the anatase phase. Both pure and doped TiO2 demonstrate stable sensor performance in long-term, however slow growth of baseline resistance and sensor response are observed which is, according to EPR data, connected with slow processes of defect annealing and intergrain contact formation.
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title_short	Gas sensing with Nb(V) doped nanocrystalline TiO
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author2	Platonov, Vadim Konstantinova, Elizaveta Grebenkina, Anastasia Rumyantseva, Marina Polomoshnov, Sergei Krivetskiy, Valeriy
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up_date	2024-07-06T21:01:40.011Z
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Gas sensing with Nb(V) doped nanocrystalline TiO

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