Design and simulation of 4H-SiC low gain avalanche diode
In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yang, Tao [verfasserIn] Fu, Chenxi [verfasserIn] Song, Weimin [verfasserIn] Tan, Yuhang [verfasserIn] Xiao, Suyu [verfasserIn] Wang, Congcong [verfasserIn] Liu, Kai [verfasserIn] Zhang, Xiyuan [verfasserIn] Shi, Xin [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2023 |
|---|
| Schlagwörter: |
|---|
| Übergeordnetes Werk: |
Enthalten in: Nuclear instruments & methods in physics research / A - Amsterdam : North-Holland Publ. Co., 1984, 1056 |
|---|---|
| Übergeordnetes Werk: |
volume:1056 |
| DOI / URN: |
10.1016/j.nima.2023.168677 |
|---|
| Katalog-ID: |
ELV065122011 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV065122011 | ||
| 003 | DE-627 | ||
| 005 | 20231203093207.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 231014s2023 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.nima.2023.168677 |2 doi | |
| 035 | |a (DE-627)ELV065122011 | ||
| 035 | |a (ELSEVIER)S0168-9002(23)00667-8 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rda | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 530 |q VZ |
| 084 | |a 33.05 |2 bkl | ||
| 084 | |a 33.07 |2 bkl | ||
| 084 | |a 33.40 |2 bkl | ||
| 100 | 1 | |a Yang, Tao |e verfasserin |0 (orcid)0000-0003-2161-5808 |4 aut | |
| 245 | 1 | 0 | |a Design and simulation of 4H-SiC low gain avalanche diode |
| 264 | 1 | |c 2023 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 520 | |a In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. | ||
| 650 | 4 | |a LGAD | |
| 650 | 4 | |a 4H-siC | |
| 650 | 4 | |a Semiconductor particle detector | |
| 650 | 4 | |a TCAD | |
| 700 | 1 | |a Fu, Chenxi |e verfasserin |4 aut | |
| 700 | 1 | |a Song, Weimin |e verfasserin |0 (orcid)0000-0003-1376-2293 |4 aut | |
| 700 | 1 | |a Tan, Yuhang |e verfasserin |4 aut | |
| 700 | 1 | |a Xiao, Suyu |e verfasserin |0 (orcid)0000-0002-1292-8143 |4 aut | |
| 700 | 1 | |a Wang, Congcong |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Kai |e verfasserin |0 (orcid)0000-0003-4529-3356 |4 aut | |
| 700 | 1 | |a Zhang, Xiyuan |e verfasserin |4 aut | |
| 700 | 1 | |a Shi, Xin |e verfasserin |0 (orcid)0000-0001-9910-9345 |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Nuclear instruments & methods in physics research / A |d Amsterdam : North-Holland Publ. Co., 1984 |g 1056 |h Online-Ressource |w (DE-627)266014666 |w (DE-600)1466532-3 |w (DE-576)074959743 |x 0168-9002 |7 nnns |
| 773 | 1 | 8 | |g volume:1056 |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_65 | ||
| 912 | |a GBV_ILN_69 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_73 | ||
| 912 | |a GBV_ILN_74 | ||
| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_101 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
| 912 | |a GBV_ILN_150 | ||
| 912 | |a GBV_ILN_151 | ||
| 912 | |a GBV_ILN_187 | ||
| 912 | |a GBV_ILN_213 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_230 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2001 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2007 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2009 | ||
| 912 | |a GBV_ILN_2010 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2026 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2056 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2232 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4249 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4307 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 912 | |a GBV_ILN_4700 | ||
| 936 | b | k | |a 33.05 |j Experimentalphysik |q VZ |
| 936 | b | k | |a 33.07 |j Spektroskopie |q VZ |
| 936 | b | k | |a 33.40 |j Kernphysik |q VZ |
| 951 | |a AR | ||
| 952 | |d 1056 | ||
| author_variant |
t y ty c f cf w s ws y t yt s x sx c w cw k l kl x z xz x s xs |
|---|---|
| matchkey_str |
article:01689002:2023----::einnsmltoo4scogi |
| hierarchy_sort_str |
2023 |
| bklnumber |
33.05 33.07 33.40 |
| publishDate |
2023 |
| allfields |
10.1016/j.nima.2023.168677 doi (DE-627)ELV065122011 (ELSEVIER)S0168-9002(23)00667-8 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Yang, Tao verfasserin (orcid)0000-0003-2161-5808 aut Design and simulation of 4H-SiC low gain avalanche diode 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. LGAD 4H-siC Semiconductor particle detector TCAD Fu, Chenxi verfasserin aut Song, Weimin verfasserin (orcid)0000-0003-1376-2293 aut Tan, Yuhang verfasserin aut Xiao, Suyu verfasserin (orcid)0000-0002-1292-8143 aut Wang, Congcong verfasserin aut Liu, Kai verfasserin (orcid)0000-0003-4529-3356 aut Zhang, Xiyuan verfasserin aut Shi, Xin verfasserin (orcid)0000-0001-9910-9345 aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1056 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1056 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1056 |
| spelling |
10.1016/j.nima.2023.168677 doi (DE-627)ELV065122011 (ELSEVIER)S0168-9002(23)00667-8 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Yang, Tao verfasserin (orcid)0000-0003-2161-5808 aut Design and simulation of 4H-SiC low gain avalanche diode 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. LGAD 4H-siC Semiconductor particle detector TCAD Fu, Chenxi verfasserin aut Song, Weimin verfasserin (orcid)0000-0003-1376-2293 aut Tan, Yuhang verfasserin aut Xiao, Suyu verfasserin (orcid)0000-0002-1292-8143 aut Wang, Congcong verfasserin aut Liu, Kai verfasserin (orcid)0000-0003-4529-3356 aut Zhang, Xiyuan verfasserin aut Shi, Xin verfasserin (orcid)0000-0001-9910-9345 aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1056 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1056 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1056 |
| allfields_unstemmed |
10.1016/j.nima.2023.168677 doi (DE-627)ELV065122011 (ELSEVIER)S0168-9002(23)00667-8 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Yang, Tao verfasserin (orcid)0000-0003-2161-5808 aut Design and simulation of 4H-SiC low gain avalanche diode 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. LGAD 4H-siC Semiconductor particle detector TCAD Fu, Chenxi verfasserin aut Song, Weimin verfasserin (orcid)0000-0003-1376-2293 aut Tan, Yuhang verfasserin aut Xiao, Suyu verfasserin (orcid)0000-0002-1292-8143 aut Wang, Congcong verfasserin aut Liu, Kai verfasserin (orcid)0000-0003-4529-3356 aut Zhang, Xiyuan verfasserin aut Shi, Xin verfasserin (orcid)0000-0001-9910-9345 aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1056 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1056 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1056 |
| allfieldsGer |
10.1016/j.nima.2023.168677 doi (DE-627)ELV065122011 (ELSEVIER)S0168-9002(23)00667-8 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Yang, Tao verfasserin (orcid)0000-0003-2161-5808 aut Design and simulation of 4H-SiC low gain avalanche diode 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. LGAD 4H-siC Semiconductor particle detector TCAD Fu, Chenxi verfasserin aut Song, Weimin verfasserin (orcid)0000-0003-1376-2293 aut Tan, Yuhang verfasserin aut Xiao, Suyu verfasserin (orcid)0000-0002-1292-8143 aut Wang, Congcong verfasserin aut Liu, Kai verfasserin (orcid)0000-0003-4529-3356 aut Zhang, Xiyuan verfasserin aut Shi, Xin verfasserin (orcid)0000-0001-9910-9345 aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1056 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1056 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1056 |
| allfieldsSound |
10.1016/j.nima.2023.168677 doi (DE-627)ELV065122011 (ELSEVIER)S0168-9002(23)00667-8 DE-627 ger DE-627 rda eng 530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Yang, Tao verfasserin (orcid)0000-0003-2161-5808 aut Design and simulation of 4H-SiC low gain avalanche diode 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. LGAD 4H-siC Semiconductor particle detector TCAD Fu, Chenxi verfasserin aut Song, Weimin verfasserin (orcid)0000-0003-1376-2293 aut Tan, Yuhang verfasserin aut Xiao, Suyu verfasserin (orcid)0000-0002-1292-8143 aut Wang, Congcong verfasserin aut Liu, Kai verfasserin (orcid)0000-0003-4529-3356 aut Zhang, Xiyuan verfasserin aut Shi, Xin verfasserin (orcid)0000-0001-9910-9345 aut Enthalten in Nuclear instruments & methods in physics research / A Amsterdam : North-Holland Publ. Co., 1984 1056 Online-Ressource (DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 0168-9002 nnns volume:1056 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.05 Experimentalphysik VZ 33.07 Spektroskopie VZ 33.40 Kernphysik VZ AR 1056 |
| language |
English |
| source |
Enthalten in Nuclear instruments & methods in physics research / A 1056 volume:1056 |
| sourceStr |
Enthalten in Nuclear instruments & methods in physics research / A 1056 volume:1056 |
| format_phy_str_mv |
Article |
| bklname |
Experimentalphysik Spektroskopie Kernphysik |
| institution |
findex.gbv.de |
| topic_facet |
LGAD 4H-siC Semiconductor particle detector TCAD |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Nuclear instruments & methods in physics research / A |
| authorswithroles_txt_mv |
Yang, Tao @@aut@@ Fu, Chenxi @@aut@@ Song, Weimin @@aut@@ Tan, Yuhang @@aut@@ Xiao, Suyu @@aut@@ Wang, Congcong @@aut@@ Liu, Kai @@aut@@ Zhang, Xiyuan @@aut@@ Shi, Xin @@aut@@ |
| publishDateDaySort_date |
2023-01-01T00:00:00Z |
| hierarchy_top_id |
266014666 |
| dewey-sort |
3530 |
| id |
ELV065122011 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV065122011</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231203093207.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231014s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nima.2023.168677</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV065122011</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-9002(23)00667-8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.05</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.07</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Tao</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-2161-5808</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Design and simulation of 4H-SiC low gain avalanche diode</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">LGAD</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">4H-siC</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor particle detector</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TCAD</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fu, Chenxi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, Weimin</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-1376-2293</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tan, Yuhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Xiao, Suyu</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-1292-8143</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Congcong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Kai</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-4529-3356</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Xiyuan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shi, Xin</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-9910-9345</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nuclear instruments & methods in physics research / A</subfield><subfield code="d">Amsterdam : North-Holland Publ. Co., 1984</subfield><subfield code="g">1056</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)266014666</subfield><subfield code="w">(DE-600)1466532-3</subfield><subfield code="w">(DE-576)074959743</subfield><subfield code="x">0168-9002</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.05</subfield><subfield code="j">Experimentalphysik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.07</subfield><subfield code="j">Spektroskopie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.40</subfield><subfield code="j">Kernphysik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1056</subfield></datafield></record></collection>
|
| author |
Yang, Tao |
| spellingShingle |
Yang, Tao ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc LGAD misc 4H-siC misc Semiconductor particle detector misc TCAD Design and simulation of 4H-SiC low gain avalanche diode |
| authorStr |
Yang, Tao |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)266014666 |
| format |
electronic Article |
| dewey-ones |
530 - Physics |
| delete_txt_mv |
keep |
| author_role |
aut aut aut aut aut aut aut aut aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0168-9002 |
| topic_title |
530 VZ 33.05 bkl 33.07 bkl 33.40 bkl Design and simulation of 4H-SiC low gain avalanche diode LGAD 4H-siC Semiconductor particle detector TCAD |
| topic |
ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc LGAD misc 4H-siC misc Semiconductor particle detector misc TCAD |
| topic_unstemmed |
ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc LGAD misc 4H-siC misc Semiconductor particle detector misc TCAD |
| topic_browse |
ddc 530 bkl 33.05 bkl 33.07 bkl 33.40 misc LGAD misc 4H-siC misc Semiconductor particle detector misc TCAD |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
cr |
| hierarchy_parent_title |
Nuclear instruments & methods in physics research / A |
| hierarchy_parent_id |
266014666 |
| dewey-tens |
530 - Physics |
| hierarchy_top_title |
Nuclear instruments & methods in physics research / A |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)266014666 (DE-600)1466532-3 (DE-576)074959743 |
| title |
Design and simulation of 4H-SiC low gain avalanche diode |
| ctrlnum |
(DE-627)ELV065122011 (ELSEVIER)S0168-9002(23)00667-8 |
| title_full |
Design and simulation of 4H-SiC low gain avalanche diode |
| author_sort |
Yang, Tao |
| journal |
Nuclear instruments & methods in physics research / A |
| journalStr |
Nuclear instruments & methods in physics research / A |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science |
| recordtype |
marc |
| publishDateSort |
2023 |
| contenttype_str_mv |
zzz |
| author_browse |
Yang, Tao Fu, Chenxi Song, Weimin Tan, Yuhang Xiao, Suyu Wang, Congcong Liu, Kai Zhang, Xiyuan Shi, Xin |
| container_volume |
1056 |
| class |
530 VZ 33.05 bkl 33.07 bkl 33.40 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Yang, Tao |
| doi_str_mv |
10.1016/j.nima.2023.168677 |
| normlink |
(ORCID)0000-0003-2161-5808 (ORCID)0000-0003-1376-2293 (ORCID)0000-0002-1292-8143 (ORCID)0000-0003-4529-3356 (ORCID)0000-0001-9910-9345 |
| normlink_prefix_str_mv |
(orcid)0000-0003-2161-5808 (orcid)0000-0003-1376-2293 (orcid)0000-0002-1292-8143 (orcid)0000-0003-4529-3356 (orcid)0000-0001-9910-9345 |
| dewey-full |
530 |
| author2-role |
verfasserin |
| title_sort |
design and simulation of 4h-sic low gain avalanche diode |
| title_auth |
Design and simulation of 4H-SiC low gain avalanche diode |
| abstract |
In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. |
| abstractGer |
In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. |
| abstract_unstemmed |
In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 |
| title_short |
Design and simulation of 4H-SiC low gain avalanche diode |
| remote_bool |
true |
| author2 |
Fu, Chenxi Song, Weimin Tan, Yuhang Xiao, Suyu Wang, Congcong Liu, Kai Zhang, Xiyuan Shi, Xin |
| author2Str |
Fu, Chenxi Song, Weimin Tan, Yuhang Xiao, Suyu Wang, Congcong Liu, Kai Zhang, Xiyuan Shi, Xin |
| ppnlink |
266014666 |
| mediatype_str_mv |
c |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| doi_str |
10.1016/j.nima.2023.168677 |
| up_date |
2024-07-06T21:54:34.877Z |
| _version_ |
1803868307330170880 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV065122011</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231203093207.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231014s2023 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nima.2023.168677</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV065122011</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-9002(23)00667-8</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.05</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.07</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yang, Tao</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-2161-5808</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Design and simulation of 4H-SiC low gain avalanche diode</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In the applications of nuclear and high-energy physics, Silicon Low Gain Avalanche Diodes (Si LGAD) as particle detectors have been shown to perform well in time resolution. Compared with silicon, 4H Silicon Carbide (4H-SiC) has a wider band gap, better radiation resistance, higher saturated carrier velocity and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for the detection of Minimum Ionization Particles (MIPs) under extreme radiation and temperature. However, due to the complexity of SiC device design and production, high performance SiC LGAD devices have not yet been produced. In this work, we use TCAD tools to design and simulate two n-type 4H-SiC LGAD structures with different electric field profiles, I/V and C/V characteristics and gain efficiencies. Through the analysis of simulation results, the LGAD with a triangle electric field profile in the gain layer has a higher gain efficiency, while the design with a trapezoid electric field profile is less affected by the gain layer thickness and more stable at high temperature. Subsequently, we will develop a set of SiC production processes under the guidance of this work.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">LGAD</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">4H-siC</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor particle detector</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">TCAD</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Fu, Chenxi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, Weimin</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-1376-2293</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tan, Yuhang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Xiao, Suyu</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0002-1292-8143</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Congcong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Kai</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0003-4529-3356</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Xiyuan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shi, Xin</subfield><subfield code="e">verfasserin</subfield><subfield code="0">(orcid)0000-0001-9910-9345</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Nuclear instruments & methods in physics research / A</subfield><subfield code="d">Amsterdam : North-Holland Publ. Co., 1984</subfield><subfield code="g">1056</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)266014666</subfield><subfield code="w">(DE-600)1466532-3</subfield><subfield code="w">(DE-576)074959743</subfield><subfield code="x">0168-9002</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:1056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2008</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.05</subfield><subfield code="j">Experimentalphysik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.07</subfield><subfield code="j">Spektroskopie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.40</subfield><subfield code="j">Kernphysik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">1056</subfield></datafield></record></collection>
|
| score |
7.401165 |