Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain

The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Wang, Yu [verfasserIn] Wang, Danni [verfasserIn] Ma, Zelong [verfasserIn] Chen, Wen [verfasserIn] Jing, Sicheng [verfasserIn] Pan, Jinghua [verfasserIn] Bian, Baoan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Schottky barriers In-plane heterojunction Electric field Strain

Übergeordnetes Werk:	Enthalten in: Chemical physics - Amsterdam [u.a.] : Elsevier Science, 1973, 576
Übergeordnetes Werk:	volume:576

DOI / URN:	10.1016/j.chemphys.2023.112114

Katalog-ID:	ELV065374177

Internformat


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245	1	0	\|a Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain
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520			\|a The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices.
650		4	\|a Schottky barriers
650		4	\|a In-plane heterojunction
650		4	\|a Electric field
650		4	\|a Strain
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700	1		\|a Ma, Zelong \|e verfasserin \|4 aut
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700	1		\|a Jing, Sicheng \|e verfasserin \|4 aut
700	1		\|a Pan, Jinghua \|e verfasserin \|4 aut
700	1		\|a Bian, Baoan \|e verfasserin \|0 (orcid)0000-0003-2102-7264 \|4 aut
773	0	8	\|i Enthalten in \|t Chemical physics \|d Amsterdam [u.a.] : Elsevier Science, 1973 \|g 576 \|h Online-Ressource \|w (DE-627)306717867 \|w (DE-600)1501546-4 \|w (DE-576)09408551X \|7 nnns
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912			\|a GBV_ILN_2059
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912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2106
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912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
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936	b	k	\|a 35.10 \|j Physikalische Chemie: Allgemeines \|q VZ
951			\|a AR
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Indexfelder

author_variant	y w yw d w dw z m zm w c wc s j sj j p jp b b bb
matchkey_str	wangyuwangdannimazelongchenwenjingsichen:2023----:ualshtkbrirfnlnmseoohnhtrjntosn
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bklnumber	35.10
publishDate	2023
allfields	10.1016/j.chemphys.2023.112114 doi (DE-627)ELV065374177 (ELSEVIER)S0301-0104(23)00296-3 DE-627 ger DE-627 rda eng 540 530 VZ 35.10 bkl Wang, Yu verfasserin aut Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices. Schottky barriers In-plane heterojunction Electric field Strain Wang, Danni verfasserin aut Ma, Zelong verfasserin aut Chen, Wen verfasserin aut Jing, Sicheng verfasserin aut Pan, Jinghua verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Enthalten in Chemical physics Amsterdam [u.a.] : Elsevier Science, 1973 576 Online-Ressource (DE-627)306717867 (DE-600)1501546-4 (DE-576)09408551X nnns volume:576 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.10 Physikalische Chemie: Allgemeines VZ AR 576
spelling	10.1016/j.chemphys.2023.112114 doi (DE-627)ELV065374177 (ELSEVIER)S0301-0104(23)00296-3 DE-627 ger DE-627 rda eng 540 530 VZ 35.10 bkl Wang, Yu verfasserin aut Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices. Schottky barriers In-plane heterojunction Electric field Strain Wang, Danni verfasserin aut Ma, Zelong verfasserin aut Chen, Wen verfasserin aut Jing, Sicheng verfasserin aut Pan, Jinghua verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Enthalten in Chemical physics Amsterdam [u.a.] : Elsevier Science, 1973 576 Online-Ressource (DE-627)306717867 (DE-600)1501546-4 (DE-576)09408551X nnns volume:576 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.10 Physikalische Chemie: Allgemeines VZ AR 576
allfields_unstemmed	10.1016/j.chemphys.2023.112114 doi (DE-627)ELV065374177 (ELSEVIER)S0301-0104(23)00296-3 DE-627 ger DE-627 rda eng 540 530 VZ 35.10 bkl Wang, Yu verfasserin aut Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices. Schottky barriers In-plane heterojunction Electric field Strain Wang, Danni verfasserin aut Ma, Zelong verfasserin aut Chen, Wen verfasserin aut Jing, Sicheng verfasserin aut Pan, Jinghua verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Enthalten in Chemical physics Amsterdam [u.a.] : Elsevier Science, 1973 576 Online-Ressource (DE-627)306717867 (DE-600)1501546-4 (DE-576)09408551X nnns volume:576 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.10 Physikalische Chemie: Allgemeines VZ AR 576
allfieldsGer	10.1016/j.chemphys.2023.112114 doi (DE-627)ELV065374177 (ELSEVIER)S0301-0104(23)00296-3 DE-627 ger DE-627 rda eng 540 530 VZ 35.10 bkl Wang, Yu verfasserin aut Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices. Schottky barriers In-plane heterojunction Electric field Strain Wang, Danni verfasserin aut Ma, Zelong verfasserin aut Chen, Wen verfasserin aut Jing, Sicheng verfasserin aut Pan, Jinghua verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Enthalten in Chemical physics Amsterdam [u.a.] : Elsevier Science, 1973 576 Online-Ressource (DE-627)306717867 (DE-600)1501546-4 (DE-576)09408551X nnns volume:576 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.10 Physikalische Chemie: Allgemeines VZ AR 576
allfieldsSound	10.1016/j.chemphys.2023.112114 doi (DE-627)ELV065374177 (ELSEVIER)S0301-0104(23)00296-3 DE-627 ger DE-627 rda eng 540 530 VZ 35.10 bkl Wang, Yu verfasserin aut Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices. Schottky barriers In-plane heterojunction Electric field Strain Wang, Danni verfasserin aut Ma, Zelong verfasserin aut Chen, Wen verfasserin aut Jing, Sicheng verfasserin aut Pan, Jinghua verfasserin aut Bian, Baoan verfasserin (orcid)0000-0003-2102-7264 aut Enthalten in Chemical physics Amsterdam [u.a.] : Elsevier Science, 1973 576 Online-Ressource (DE-627)306717867 (DE-600)1501546-4 (DE-576)09408551X nnns volume:576 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.10 Physikalische Chemie: Allgemeines VZ AR 576
language	English
source	Enthalten in Chemical physics 576 volume:576
sourceStr	Enthalten in Chemical physics 576 volume:576
format_phy_str_mv	Article
bklname	Physikalische Chemie: Allgemeines
institution	findex.gbv.de
topic_facet	Schottky barriers In-plane heterojunction Electric field Strain
dewey-raw	540
isfreeaccess_bool	false
container_title	Chemical physics
authorswithroles_txt_mv	Wang, Yu @@aut@@ Wang, Danni @@aut@@ Ma, Zelong @@aut@@ Chen, Wen @@aut@@ Jing, Sicheng @@aut@@ Pan, Jinghua @@aut@@ Bian, Baoan @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	306717867
dewey-sort	3540
id	ELV065374177
language_de	englisch
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author	Wang, Yu
spellingShingle	Wang, Yu ddc 540 bkl 35.10 misc Schottky barriers misc In-plane heterojunction misc Electric field misc Strain Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain
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topic_title	540 530 VZ 35.10 bkl Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain Schottky barriers In-plane heterojunction Electric field Strain
topic	ddc 540 bkl 35.10 misc Schottky barriers misc In-plane heterojunction misc Electric field misc Strain
topic_unstemmed	ddc 540 bkl 35.10 misc Schottky barriers misc In-plane heterojunction misc Electric field misc Strain
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title	Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain
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title_full	Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain
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author_browse	Wang, Yu Wang, Danni Ma, Zelong Chen, Wen Jing, Sicheng Pan, Jinghua Bian, Baoan
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title_sort	tunable schottky barrier of in-plane mosse/borophene heterojunctions under electric field and strain
title_auth	Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain
abstract	The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices.
abstractGer	The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices.
abstract_unstemmed	The electronic properties of Janus MoSSe/Borophene in-plane heterojunctions are investigated through the first principle calculations. The constructed MoSSe/Borophene heterojunctions with different structures of Borophene exhibit different electronic properties. All the heterojunctions present the p-type Schottky contact. Furthermore, the electronic properties of MoSSe/Borophene heterojunctions can be modulated by electric field and mechanical strain. Specifically, as the applied electric field changes, the band gap also changes and Ohmic contact is achieved. Additionally, the strain induces a direct to indirect band gap transition of Janus MoSSe and changed contact type. The results demonstrate that the tunable electronic properties of Janus MoSSe/Borophene heterojunction make it become a promising candidate for the electronic devices.
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title_short	Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain
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author2	Wang, Danni Ma, Zelong Chen, Wen Jing, Sicheng Pan, Jinghua Bian, Baoan
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doi_str	10.1016/j.chemphys.2023.112114
up_date	2024-07-06T22:48:36.407Z
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Tunable Schottky barrier of in-plane MoSSe/Borophene heterojunctions under electric field and strain

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