Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization

As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage curre...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Yue, Zhi Yun [verfasserIn] Zhang, Zhi Dong [verfasserIn] Wang, Zhan Jie [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching

Übergeordnetes Werk:	Enthalten in: No title available - 171, Seite 139-146
Übergeordnetes Werk:	volume:171 ; pages:139-146

DOI / URN:	10.1016/j.jmst.2023.07.007

Katalog-ID:	ELV065530462

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100	1		\|a Yue, Zhi Yun \|e verfasserin \|4 aut
245	1	0	\|a Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
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520			\|a As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices.
650		4	\|a Ferroelectric memristor
650		4	\|a Ca-doped PZT
650		4	\|a Ferroelectric polarization
650		4	\|a Oxygen vacancies
650		4	\|a Resistive switching
700	1		\|a Zhang, Zhi Dong \|e verfasserin \|0 (orcid)0000-0002-6203-0171 \|4 aut
700	1		\|a Wang, Zhan Jie \|e verfasserin \|0 (orcid)0000-0002-9288-4928 \|4 aut
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allfields	10.1016/j.jmst.2023.07.007 doi (DE-627)ELV065530462 (ELSEVIER)S1005-0302(23)00623-0 DE-627 ger DE-627 rda eng Yue, Zhi Yun verfasserin aut Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching Zhang, Zhi Dong verfasserin (orcid)0000-0002-6203-0171 aut Wang, Zhan Jie verfasserin (orcid)0000-0002-9288-4928 aut Enthalten in No title available 171, Seite 139-146 (DE-627)569616417 1005-0302 nnns volume:171 pages:139-146 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 171 139-146
spelling	10.1016/j.jmst.2023.07.007 doi (DE-627)ELV065530462 (ELSEVIER)S1005-0302(23)00623-0 DE-627 ger DE-627 rda eng Yue, Zhi Yun verfasserin aut Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching Zhang, Zhi Dong verfasserin (orcid)0000-0002-6203-0171 aut Wang, Zhan Jie verfasserin (orcid)0000-0002-9288-4928 aut Enthalten in No title available 171, Seite 139-146 (DE-627)569616417 1005-0302 nnns volume:171 pages:139-146 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 171 139-146
allfields_unstemmed	10.1016/j.jmst.2023.07.007 doi (DE-627)ELV065530462 (ELSEVIER)S1005-0302(23)00623-0 DE-627 ger DE-627 rda eng Yue, Zhi Yun verfasserin aut Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching Zhang, Zhi Dong verfasserin (orcid)0000-0002-6203-0171 aut Wang, Zhan Jie verfasserin (orcid)0000-0002-9288-4928 aut Enthalten in No title available 171, Seite 139-146 (DE-627)569616417 1005-0302 nnns volume:171 pages:139-146 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 171 139-146
allfieldsGer	10.1016/j.jmst.2023.07.007 doi (DE-627)ELV065530462 (ELSEVIER)S1005-0302(23)00623-0 DE-627 ger DE-627 rda eng Yue, Zhi Yun verfasserin aut Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching Zhang, Zhi Dong verfasserin (orcid)0000-0002-6203-0171 aut Wang, Zhan Jie verfasserin (orcid)0000-0002-9288-4928 aut Enthalten in No title available 171, Seite 139-146 (DE-627)569616417 1005-0302 nnns volume:171 pages:139-146 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 171 139-146
allfieldsSound	10.1016/j.jmst.2023.07.007 doi (DE-627)ELV065530462 (ELSEVIER)S1005-0302(23)00623-0 DE-627 ger DE-627 rda eng Yue, Zhi Yun verfasserin aut Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices. Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching Zhang, Zhi Dong verfasserin (orcid)0000-0002-6203-0171 aut Wang, Zhan Jie verfasserin (orcid)0000-0002-9288-4928 aut Enthalten in No title available 171, Seite 139-146 (DE-627)569616417 1005-0302 nnns volume:171 pages:139-146 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2036 GBV_ILN_2037 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2700 GBV_ILN_2817 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4392 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 171 139-146
language	English
source	Enthalten in No title available 171, Seite 139-146 volume:171 pages:139-146
sourceStr	Enthalten in No title available 171, Seite 139-146 volume:171 pages:139-146
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching
isfreeaccess_bool	false
container_title	No title available
authorswithroles_txt_mv	Yue, Zhi Yun @@aut@@ Zhang, Zhi Dong @@aut@@ Wang, Zhan Jie @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	569616417
id	ELV065530462
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">ELV065530462</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231111093140.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231111s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jmst.2023.07.007</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV065530462</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1005-0302(23)00623-0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yue, Zhi Yun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. 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author	Yue, Zhi Yun
spellingShingle	Yue, Zhi Yun misc Ferroelectric memristor misc Ca-doped PZT misc Ferroelectric polarization misc Oxygen vacancies misc Resistive switching Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
authorStr	Yue, Zhi Yun
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topic_title	Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization Ferroelectric memristor Ca-doped PZT Ferroelectric polarization Oxygen vacancies Resistive switching
topic	misc Ferroelectric memristor misc Ca-doped PZT misc Ferroelectric polarization misc Oxygen vacancies misc Resistive switching
topic_unstemmed	misc Ferroelectric memristor misc Ca-doped PZT misc Ferroelectric polarization misc Oxygen vacancies misc Resistive switching
topic_browse	misc Ferroelectric memristor misc Ca-doped PZT misc Ferroelectric polarization misc Oxygen vacancies misc Resistive switching
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
ctrlnum	(DE-627)ELV065530462 (ELSEVIER)S1005-0302(23)00623-0
title_full	Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
author_sort	Yue, Zhi Yun
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container_start_page	139
author_browse	Yue, Zhi Yun Zhang, Zhi Dong Wang, Zhan Jie
container_volume	171
format_se	Elektronische Aufsätze
author-letter	Yue, Zhi Yun
doi_str_mv	10.1016/j.jmst.2023.07.007
normlink	(ORCID)0000-0002-6203-0171 (ORCID)0000-0002-9288-4928
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title_sort	enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
title_auth	Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
abstract	As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices.
abstractGer	As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices.
abstract_unstemmed	As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices.
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title_short	Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization
remote_bool	true
author2	Zhang, Zhi Dong Wang, Zhan Jie
author2Str	Zhang, Zhi Dong Wang, Zhan Jie
ppnlink	569616417
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.jmst.2023.07.007
up_date	2024-07-06T23:21:04.387Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000naa a22002652 4500</leader><controlfield tag="001">ELV065530462</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20231111093140.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">231111s2023 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jmst.2023.07.007</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV065530462</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1005-0302(23)00623-0</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Yue, Zhi Yun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2023</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">As a new type of nonvolatile memory, the resistive memristor has broad application prospects in information storage and neural computing based on its excellent resistive switching (RS) performance. At present, it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/off ratio of ferroelectric memristors. Herein, epitaxial Pb(Zr0.40Ti0.60)O3 (PZT) thin films with low content Ca doping were deposited on the Nb:SrTiO3 substrate to prepare PCZT/NSTO heterostructures and their RS behaviors were studied. The research findings show that compared with pure PZT film, the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved, while the leakage current is increased by three orders of magnitude. Therefore, the RS on/off ratio reaches 2.5 × 105, about three orders of magnitude higher than pure PZT films. The theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current mechanism. Our results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance, which provides a good reference for the development of high-performance ferroelectric memristor devices.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric memristor</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ca-doped PZT</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric polarization</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxygen vacancies</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Resistive switching</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Zhi Dong</subfield><subfield code="e">verfasserin</subfield><subfield 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