Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs

The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Shen, Jingyu [verfasserIn] Jing, Liang [verfasserIn] Qiu, Jinpeng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2023

Schlagwörter:	AlGaN/GaN HEMTs Reliability Current collapse Hot electrons

Übergeordnetes Werk:	Enthalten in: Microelectronics journal - Amsterdam [u.a.] : Elsevier Science, 1989, 142
Übergeordnetes Werk:	volume:142

DOI / URN:	10.1016/j.mejo.2023.106023

Katalog-ID:	ELV065850491

Internformat


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100	1		\|a Shen, Jingyu \|e verfasserin \|0 (orcid)0000-0002-4472-5105 \|4 aut
245	1	0	\|a Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs
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520			\|a The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V.
650		4	\|a AlGaN/GaN
650		4	\|a HEMTs
650		4	\|a Reliability
650		4	\|a Current collapse
650		4	\|a Hot electrons
700	1		\|a Jing, Liang \|e verfasserin \|4 aut
700	1		\|a Qiu, Jinpeng \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Microelectronics journal \|d Amsterdam [u.a.] : Elsevier Science, 1989 \|g 142 \|h Online-Ressource \|w (DE-627)320405079 \|w (DE-600)2000567-2 \|w (DE-576)259484350 \|7 nnns
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952			\|d 142

Indexfelder

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publishDate	2023
allfields	10.1016/j.mejo.2023.106023 doi (DE-627)ELV065850491 (ELSEVIER)S0026-2692(23)00336-1 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Shen, Jingyu verfasserin (orcid)0000-0002-4472-5105 aut Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V. AlGaN/GaN HEMTs Reliability Current collapse Hot electrons Jing, Liang verfasserin aut Qiu, Jinpeng verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 142 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 142
spelling	10.1016/j.mejo.2023.106023 doi (DE-627)ELV065850491 (ELSEVIER)S0026-2692(23)00336-1 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Shen, Jingyu verfasserin (orcid)0000-0002-4472-5105 aut Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V. AlGaN/GaN HEMTs Reliability Current collapse Hot electrons Jing, Liang verfasserin aut Qiu, Jinpeng verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 142 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 142
allfields_unstemmed	10.1016/j.mejo.2023.106023 doi (DE-627)ELV065850491 (ELSEVIER)S0026-2692(23)00336-1 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Shen, Jingyu verfasserin (orcid)0000-0002-4472-5105 aut Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V. AlGaN/GaN HEMTs Reliability Current collapse Hot electrons Jing, Liang verfasserin aut Qiu, Jinpeng verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 142 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 142
allfieldsGer	10.1016/j.mejo.2023.106023 doi (DE-627)ELV065850491 (ELSEVIER)S0026-2692(23)00336-1 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Shen, Jingyu verfasserin (orcid)0000-0002-4472-5105 aut Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V. AlGaN/GaN HEMTs Reliability Current collapse Hot electrons Jing, Liang verfasserin aut Qiu, Jinpeng verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 142 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 142
allfieldsSound	10.1016/j.mejo.2023.106023 doi (DE-627)ELV065850491 (ELSEVIER)S0026-2692(23)00336-1 DE-627 ger DE-627 rda eng 620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Shen, Jingyu verfasserin (orcid)0000-0002-4472-5105 aut Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V. AlGaN/GaN HEMTs Reliability Current collapse Hot electrons Jing, Liang verfasserin aut Qiu, Jinpeng verfasserin aut Enthalten in Microelectronics journal Amsterdam [u.a.] : Elsevier Science, 1989 142 Online-Ressource (DE-627)320405079 (DE-600)2000567-2 (DE-576)259484350 nnns volume:142 GBV_USEFLAG_U GBV_ELV SYSFLAG_U GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 Mikroelektronik VZ 53.52 Elektronische Schaltungen VZ 33.61 Festkörperphysik VZ 33.72 Halbleiterphysik VZ AR 142
language	English
source	Enthalten in Microelectronics journal 142 volume:142
sourceStr	Enthalten in Microelectronics journal 142 volume:142
format_phy_str_mv	Article
bklname	Mikroelektronik Elektronische Schaltungen Festkörperphysik Halbleiterphysik
institution	findex.gbv.de
topic_facet	AlGaN/GaN HEMTs Reliability Current collapse Hot electrons
dewey-raw	620
isfreeaccess_bool	false
container_title	Microelectronics journal
authorswithroles_txt_mv	Shen, Jingyu @@aut@@ Jing, Liang @@aut@@ Qiu, Jinpeng @@aut@@
publishDateDaySort_date	2023-01-01T00:00:00Z
hierarchy_top_id	320405079
dewey-sort	3620
id	ELV065850491
language_de	englisch
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author	Shen, Jingyu
spellingShingle	Shen, Jingyu ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc AlGaN/GaN misc HEMTs misc Reliability misc Current collapse misc Hot electrons Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs
authorStr	Shen, Jingyu
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topic_title	620 VZ 53.55 bkl 53.52 bkl 33.61 bkl 33.72 bkl Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs AlGaN/GaN HEMTs Reliability Current collapse Hot electrons
topic	ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc AlGaN/GaN misc HEMTs misc Reliability misc Current collapse misc Hot electrons
topic_unstemmed	ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc AlGaN/GaN misc HEMTs misc Reliability misc Current collapse misc Hot electrons
topic_browse	ddc 620 bkl 53.55 bkl 53.52 bkl 33.61 bkl 33.72 misc AlGaN/GaN misc HEMTs misc Reliability misc Current collapse misc Hot electrons
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title	Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs
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title_full	Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs
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title_sort	investigation of dynamic r on stability and hot electrons reliability in normally-off algan/gan power hemts
title_auth	Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs
abstract	The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V.
abstractGer	The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V.
abstract_unstemmed	The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic R on ) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic R on stability of 100 V GaN power HEMT is qualified (R on /R ini, static < 1.2) when the drain-source off-state voltage (V dsoff ) is less than 80 V. It is shown that the dynamic R on degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the V th drift and R on degradation are extraordinary serious under semi on-state stress condition with V dsoff = 60 V.
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title_short	Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs
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doi_str	10.1016/j.mejo.2023.106023
up_date	2024-07-07T00:28:11.725Z
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Investigation of dynamic r on stability and hot electrons reliability in normally-off AlGaN/GaN power HEMTs

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