New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio
Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis i...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kim, Hye Ri [verfasserIn] Lee, Jinsil [verfasserIn] Kim, Myeongju [verfasserIn] Choi, Doo Hyun [verfasserIn] Lee, Jungmin [verfasserIn] Joo, Jong Hoon [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2023 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of the European Ceramic Society - European Ceramic Society ; ID: gnd/814932-X, Amsterdam [u.a.] : Elsevier Science, 1989, 43, Seite 4290-4298 |
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| Übergeordnetes Werk: |
volume:43 ; pages:4290-4298 |
| DOI / URN: |
10.1016/j.jeurceramsoc.2023.03.032 |
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| Katalog-ID: |
ELV066256720 |
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| 245 | 1 | 0 | |a New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio |
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| 520 | |a Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. | ||
| 650 | 4 | |a Silicon carbide | |
| 650 | 4 | |a Ceramic fiber | |
| 650 | 4 | |a Impedance analysis | |
| 650 | 4 | |a Oxidation behavior | |
| 650 | 4 | |a Aspect ratio | |
| 700 | 1 | |a Lee, Jinsil |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, Myeongju |e verfasserin |4 aut | |
| 700 | 1 | |a Choi, Doo Hyun |e verfasserin |0 (orcid)0000-0001-6314-6582 |4 aut | |
| 700 | 1 | |a Lee, Jungmin |e verfasserin |4 aut | |
| 700 | 1 | |a Joo, Jong Hoon |e verfasserin |0 (orcid)0000-0002-2819-034X |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |a European Ceramic Society ; ID: gnd/814932-X |t Journal of the European Ceramic Society |d Amsterdam [u.a.] : Elsevier Science, 1989 |g 43, Seite 4290-4298 |h Online-Ressource |w (DE-627)320516237 |w (DE-600)2013983-4 |w (DE-576)096806621 |x 0955-2219 |7 nnns |
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10.1016/j.jeurceramsoc.2023.03.032 doi (DE-627)ELV066256720 (ELSEVIER)S0955-2219(23)00228-5 DE-627 ger DE-627 rda eng 660 VZ 51.60 bkl 58.45 bkl Kim, Hye Ri verfasserin aut New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. Silicon carbide Ceramic fiber Impedance analysis Oxidation behavior Aspect ratio Lee, Jinsil verfasserin aut Kim, Myeongju verfasserin aut Choi, Doo Hyun verfasserin (orcid)0000-0001-6314-6582 aut Lee, Jungmin verfasserin aut Joo, Jong Hoon verfasserin (orcid)0000-0002-2819-034X aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 43, Seite 4290-4298 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:43 pages:4290-4298 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 43 4290-4298 |
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10.1016/j.jeurceramsoc.2023.03.032 doi (DE-627)ELV066256720 (ELSEVIER)S0955-2219(23)00228-5 DE-627 ger DE-627 rda eng 660 VZ 51.60 bkl 58.45 bkl Kim, Hye Ri verfasserin aut New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. Silicon carbide Ceramic fiber Impedance analysis Oxidation behavior Aspect ratio Lee, Jinsil verfasserin aut Kim, Myeongju verfasserin aut Choi, Doo Hyun verfasserin (orcid)0000-0001-6314-6582 aut Lee, Jungmin verfasserin aut Joo, Jong Hoon verfasserin (orcid)0000-0002-2819-034X aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 43, Seite 4290-4298 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:43 pages:4290-4298 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 43 4290-4298 |
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10.1016/j.jeurceramsoc.2023.03.032 doi (DE-627)ELV066256720 (ELSEVIER)S0955-2219(23)00228-5 DE-627 ger DE-627 rda eng 660 VZ 51.60 bkl 58.45 bkl Kim, Hye Ri verfasserin aut New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. Silicon carbide Ceramic fiber Impedance analysis Oxidation behavior Aspect ratio Lee, Jinsil verfasserin aut Kim, Myeongju verfasserin aut Choi, Doo Hyun verfasserin (orcid)0000-0001-6314-6582 aut Lee, Jungmin verfasserin aut Joo, Jong Hoon verfasserin (orcid)0000-0002-2819-034X aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 43, Seite 4290-4298 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:43 pages:4290-4298 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 43 4290-4298 |
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10.1016/j.jeurceramsoc.2023.03.032 doi (DE-627)ELV066256720 (ELSEVIER)S0955-2219(23)00228-5 DE-627 ger DE-627 rda eng 660 VZ 51.60 bkl 58.45 bkl Kim, Hye Ri verfasserin aut New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. Silicon carbide Ceramic fiber Impedance analysis Oxidation behavior Aspect ratio Lee, Jinsil verfasserin aut Kim, Myeongju verfasserin aut Choi, Doo Hyun verfasserin (orcid)0000-0001-6314-6582 aut Lee, Jungmin verfasserin aut Joo, Jong Hoon verfasserin (orcid)0000-0002-2819-034X aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 43, Seite 4290-4298 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:43 pages:4290-4298 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 43 4290-4298 |
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10.1016/j.jeurceramsoc.2023.03.032 doi (DE-627)ELV066256720 (ELSEVIER)S0955-2219(23)00228-5 DE-627 ger DE-627 rda eng 660 VZ 51.60 bkl 58.45 bkl Kim, Hye Ri verfasserin aut New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio 2023 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. Silicon carbide Ceramic fiber Impedance analysis Oxidation behavior Aspect ratio Lee, Jinsil verfasserin aut Kim, Myeongju verfasserin aut Choi, Doo Hyun verfasserin (orcid)0000-0001-6314-6582 aut Lee, Jungmin verfasserin aut Joo, Jong Hoon verfasserin (orcid)0000-0002-2819-034X aut Enthalten in European Ceramic Society ; ID: gnd/814932-X Journal of the European Ceramic Society Amsterdam [u.a.] : Elsevier Science, 1989 43, Seite 4290-4298 Online-Ressource (DE-627)320516237 (DE-600)2013983-4 (DE-576)096806621 0955-2219 nnns volume:43 pages:4290-4298 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2088 GBV_ILN_2106 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2470 GBV_ILN_2507 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.60 Keramische Werkstoffe Hartstoffe Werkstoffkunde VZ 58.45 Gesteinshüttenkunde VZ AR 43 4290-4298 |
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Enthalten in Journal of the European Ceramic Society 43, Seite 4290-4298 volume:43 pages:4290-4298 |
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Kim, Hye Ri @@aut@@ Lee, Jinsil @@aut@@ Kim, Myeongju @@aut@@ Choi, Doo Hyun @@aut@@ Lee, Jungmin @@aut@@ Joo, Jong Hoon @@aut@@ |
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Kim, Hye Ri |
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Kim, Hye Ri ddc 660 bkl 51.60 bkl 58.45 misc Silicon carbide misc Ceramic fiber misc Impedance analysis misc Oxidation behavior misc Aspect ratio New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio |
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660 VZ 51.60 bkl 58.45 bkl New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio Silicon carbide Ceramic fiber Impedance analysis Oxidation behavior Aspect ratio |
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ddc 660 bkl 51.60 bkl 58.45 misc Silicon carbide misc Ceramic fiber misc Impedance analysis misc Oxidation behavior misc Aspect ratio |
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new strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio |
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New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio |
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Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. |
| abstractGer |
Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. |
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Silicon carbide fibers (SiCf) are promising materials for high-temperature applications, because of their excellent thermal and mechanical properties. Due to the inevitable oxidation of SiCf used at high-temperature, the surface and interfacial properties of SiCf can be changed. Impedance analysis is necessary to confirm the useful information for various properties. However, since single SiCf has a long length and a very small cross-section area, its capacitance is so small that impedance analysis is almost impossible. In this study, an in-situ analysis tool that can estimate the impedance of SiCf to confirm the resistance elements is proposed using bundled fiber specimens. It is confirmed that it is possible to measure the impedance of the SiCf under high-temperature and oxidation atmospheres by controlling the aspect ratio of the specimen. This tool provides a new pathway that can be applied in various systems by investigating the electrical properties according to the oxidation behavior. |
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New strategy for impedance measurement of surface oxidation characteristic in ceramic fiber by controlling aspect ratio |
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| score |
7.399208 |