Numerical analysis of abrupt heterojunction bipolar transistors
This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnell...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1998 |
|---|
| Umfang: |
6 Ill. ; 1 Tab. 9 |
|---|
| Reproduktion: |
Wiley InterScience Backfile Collection 1832-2000 |
|---|---|
| Übergeordnetes Werk: |
in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields - Chichester [u.a.] : Wiley, 11(1998) vom: Apr., Seite 221-229 |
| Übergeordnetes Werk: |
volume:11 ; year:1998 ; month:04 ; pages:221-229 ; extent:9 |
| Links: |
|---|
| Katalog-ID: |
NLEJ163338310 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLEJ163338310 | ||
| 003 | DE-627 | ||
| 005 | 20210707113005.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 070201s1998 xx |||||o 00| ||eng c | ||
| 035 | |a (DE-627)NLEJ163338310 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Numerical analysis of abrupt heterojunction bipolar transistors |
| 264 | 1 | |c 1998 | |
| 300 | |b 6 Ill. |b 1 Tab. | ||
| 300 | |a 9 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. | ||
| 533 | |f Wiley InterScience Backfile Collection 1832-2000 | ||
| 700 | 1 | |a Garcia-Loureiro, Antonio J. |4 oth | |
| 700 | 1 | |a Lopez-Gonzalez, Juan M. |4 oth | |
| 700 | 1 | |a Pena, Tomas F. |4 oth | |
| 700 | 1 | |a Prat, Lluis |4 oth | |
| 773 | 0 | 8 | |i in |t International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |d Chichester [u.a.] : Wiley |g 11(1998) vom: Apr., Seite 221-229 |w (DE-627)NLEJ159071313 |w (DE-600)2030930-2 |x 0894-3370 |7 nnns |
| 773 | 1 | 8 | |g volume:11 |g year:1998 |g month:04 |g pages:221-229 |g extent:9 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V |q text/html |z Deutschlandweit zugänglich |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a ZDB-1-WIS | ||
| 912 | |a GBV_NL_ARTICLE | ||
| 951 | |a AR | ||
| 952 | |d 11 |j 1998 |c 4 |h 221-229 |g 9 | ||
| matchkey_str |
article:08943370:1998----::ueiaaayioarphtrjntobp |
|---|---|
| hierarchy_sort_str |
1998 |
| publishDate |
1998 |
| allfields |
(DE-627)NLEJ163338310 DE-627 ger DE-627 rakwb eng Numerical analysis of abrupt heterojunction bipolar transistors 1998 6 Ill. 1 Tab. 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. Wiley InterScience Backfile Collection 1832-2000 Garcia-Loureiro, Antonio J. oth Lopez-Gonzalez, Juan M. oth Pena, Tomas F. oth Prat, Lluis oth in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Chichester [u.a.] : Wiley 11(1998) vom: Apr., Seite 221-229 (DE-627)NLEJ159071313 (DE-600)2030930-2 0894-3370 nnns volume:11 year:1998 month:04 pages:221-229 extent:9 http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V text/html Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-WIS GBV_NL_ARTICLE AR 11 1998 4 221-229 9 |
| spelling |
(DE-627)NLEJ163338310 DE-627 ger DE-627 rakwb eng Numerical analysis of abrupt heterojunction bipolar transistors 1998 6 Ill. 1 Tab. 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. Wiley InterScience Backfile Collection 1832-2000 Garcia-Loureiro, Antonio J. oth Lopez-Gonzalez, Juan M. oth Pena, Tomas F. oth Prat, Lluis oth in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Chichester [u.a.] : Wiley 11(1998) vom: Apr., Seite 221-229 (DE-627)NLEJ159071313 (DE-600)2030930-2 0894-3370 nnns volume:11 year:1998 month:04 pages:221-229 extent:9 http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V text/html Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-WIS GBV_NL_ARTICLE AR 11 1998 4 221-229 9 |
| allfields_unstemmed |
(DE-627)NLEJ163338310 DE-627 ger DE-627 rakwb eng Numerical analysis of abrupt heterojunction bipolar transistors 1998 6 Ill. 1 Tab. 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. Wiley InterScience Backfile Collection 1832-2000 Garcia-Loureiro, Antonio J. oth Lopez-Gonzalez, Juan M. oth Pena, Tomas F. oth Prat, Lluis oth in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Chichester [u.a.] : Wiley 11(1998) vom: Apr., Seite 221-229 (DE-627)NLEJ159071313 (DE-600)2030930-2 0894-3370 nnns volume:11 year:1998 month:04 pages:221-229 extent:9 http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V text/html Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-WIS GBV_NL_ARTICLE AR 11 1998 4 221-229 9 |
| allfieldsGer |
(DE-627)NLEJ163338310 DE-627 ger DE-627 rakwb eng Numerical analysis of abrupt heterojunction bipolar transistors 1998 6 Ill. 1 Tab. 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. Wiley InterScience Backfile Collection 1832-2000 Garcia-Loureiro, Antonio J. oth Lopez-Gonzalez, Juan M. oth Pena, Tomas F. oth Prat, Lluis oth in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Chichester [u.a.] : Wiley 11(1998) vom: Apr., Seite 221-229 (DE-627)NLEJ159071313 (DE-600)2030930-2 0894-3370 nnns volume:11 year:1998 month:04 pages:221-229 extent:9 http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V text/html Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-WIS GBV_NL_ARTICLE AR 11 1998 4 221-229 9 |
| allfieldsSound |
(DE-627)NLEJ163338310 DE-627 ger DE-627 rakwb eng Numerical analysis of abrupt heterojunction bipolar transistors 1998 6 Ill. 1 Tab. 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. Wiley InterScience Backfile Collection 1832-2000 Garcia-Loureiro, Antonio J. oth Lopez-Gonzalez, Juan M. oth Pena, Tomas F. oth Prat, Lluis oth in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields Chichester [u.a.] : Wiley 11(1998) vom: Apr., Seite 221-229 (DE-627)NLEJ159071313 (DE-600)2030930-2 0894-3370 nnns volume:11 year:1998 month:04 pages:221-229 extent:9 http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V text/html Deutschlandweit zugänglich GBV_USEFLAG_U ZDB-1-WIS GBV_NL_ARTICLE AR 11 1998 4 221-229 9 |
| language |
English |
| source |
in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 11(1998) vom: Apr., Seite 221-229 volume:11 year:1998 month:04 pages:221-229 extent:9 |
| sourceStr |
in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 11(1998) vom: Apr., Seite 221-229 volume:11 year:1998 month:04 pages:221-229 extent:9 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| isfreeaccess_bool |
false |
| container_title |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
| authorswithroles_txt_mv |
Garcia-Loureiro, Antonio J. @@oth@@ Lopez-Gonzalez, Juan M. @@oth@@ Pena, Tomas F. @@oth@@ Prat, Lluis @@oth@@ |
| publishDateDaySort_date |
1998-04-01T00:00:00Z |
| hierarchy_top_id |
NLEJ159071313 |
| id |
NLEJ163338310 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ163338310</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707113005.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070201s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ163338310</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Numerical analysis of abrupt heterojunction bipolar transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="b">6 Ill.</subfield><subfield code="b">1 Tab.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">9</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Wiley InterScience Backfile Collection 1832-2000</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Garcia-Loureiro, Antonio J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lopez-Gonzalez, Juan M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pena, Tomas F.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Prat, Lluis</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">International Journal of Numerical Modelling: Electronic Networks, Devices and Fields</subfield><subfield code="d">Chichester [u.a.] : Wiley</subfield><subfield code="g">11(1998) vom: Apr., Seite 221-229</subfield><subfield code="w">(DE-627)NLEJ159071313</subfield><subfield code="w">(DE-600)2030930-2</subfield><subfield code="x">0894-3370</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:1998</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:221-229</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V</subfield><subfield code="q">text/html</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-WIS</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">1998</subfield><subfield code="c">4</subfield><subfield code="h">221-229</subfield><subfield code="g">9</subfield></datafield></record></collection>
|
| series2 |
Wiley InterScience Backfile Collection 1832-2000 |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)NLEJ159071313 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| collection |
NL |
| remote_str |
true |
| illustrated |
Illustrated |
| issn |
0894-3370 |
| topic_title |
Numerical analysis of abrupt heterojunction bipolar transistors |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
a j g l ajg ajgl j m l g jml jmlg t f p tf tfp l p lp |
| hierarchy_parent_title |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
| hierarchy_parent_id |
NLEJ159071313 |
| hierarchy_top_title |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)NLEJ159071313 (DE-600)2030930-2 |
| title |
Numerical analysis of abrupt heterojunction bipolar transistors |
| spellingShingle |
Numerical analysis of abrupt heterojunction bipolar transistors |
| ctrlnum |
(DE-627)NLEJ163338310 |
| title_full |
Numerical analysis of abrupt heterojunction bipolar transistors |
| journal |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
| journalStr |
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1998 |
| contenttype_str_mv |
zzz |
| container_start_page |
221 |
| container_volume |
11 |
| physical |
6 Ill. 1 Tab. 9 |
| format_se |
Elektronische Aufsätze |
| title_sort |
numerical analysis of abrupt heterojunction bipolar transistors |
| title_auth |
Numerical analysis of abrupt heterojunction bipolar transistors |
| abstract |
This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. |
| abstractGer |
This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. |
| abstract_unstemmed |
This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd. |
| collection_details |
GBV_USEFLAG_U ZDB-1-WIS GBV_NL_ARTICLE |
| title_short |
Numerical analysis of abrupt heterojunction bipolar transistors |
| url |
http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V |
| remote_bool |
true |
| author2 |
Garcia-Loureiro, Antonio J. Lopez-Gonzalez, Juan M. Pena, Tomas F. Prat, Lluis |
| author2Str |
Garcia-Loureiro, Antonio J. Lopez-Gonzalez, Juan M. Pena, Tomas F. Prat, Lluis |
| ppnlink |
NLEJ159071313 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth |
| up_date |
2024-07-06T08:03:36.986Z |
| _version_ |
1803816027541209088 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ163338310</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707113005.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070201s1998 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ163338310</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Numerical analysis of abrupt heterojunction bipolar transistors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1998</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="b">6 Ill.</subfield><subfield code="b">1 Tab.</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">9</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Wiley InterScience Backfile Collection 1832-2000</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Garcia-Loureiro, Antonio J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lopez-Gonzalez, Juan M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pena, Tomas F.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Prat, Lluis</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">International Journal of Numerical Modelling: Electronic Networks, Devices and Fields</subfield><subfield code="d">Chichester [u.a.] : Wiley</subfield><subfield code="g">11(1998) vom: Apr., Seite 221-229</subfield><subfield code="w">(DE-627)NLEJ159071313</subfield><subfield code="w">(DE-600)2030930-2</subfield><subfield code="x">0894-3370</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:11</subfield><subfield code="g">year:1998</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:221-229</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1002/(SICI)1099-1204(199807/08)11:4<221::AID-JNM303>3.0.CO;2-V</subfield><subfield code="q">text/html</subfield><subfield code="z">Deutschlandweit zugänglich</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-WIS</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">11</subfield><subfield code="j">1998</subfield><subfield code="c">4</subfield><subfield code="h">221-229</subfield><subfield code="g">9</subfield></datafield></record></collection>
|
| score |
7.402275 |