Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma
Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the positio...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1983 |
|---|
| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Thin Solid Films - Amsterdam : Elsevier, 107(1983), 2, Seite 181-189 |
| Übergeordnetes Werk: |
volume:107 ; year:1983 ; number:2 ; pages:181-189 |
| Links: |
|---|
| Katalog-ID: |
NLEJ17775625X |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLEJ17775625X | ||
| 003 | DE-627 | ||
| 005 | 20210706060648.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 070505s1983 xx |||||o 00| ||eng c | ||
| 035 | |a (DE-627)NLEJ17775625X | ||
| 035 | |a (DE-599)GBVNLZ17775625X | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| 264 | 1 | |c 1983 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. | ||
| 533 | |f Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 | ||
| 700 | 1 | |a Ron, Y. |4 oth | |
| 700 | 1 | |a Raveh, A. |4 oth | |
| 700 | 1 | |a Carmi, U. |4 oth | |
| 700 | 1 | |a Inspektor, A. |4 oth | |
| 700 | 1 | |a Avni, R. |4 oth | |
| 773 | 0 | 8 | |i in |t Thin Solid Films |d Amsterdam : Elsevier |g 107(1983), 2, Seite 181-189 |w (DE-627)NLEJ177331380 |w (DE-600)1482896-0 |x 0040-6090 |7 nnns |
| 773 | 1 | 8 | |g volume:107 |g year:1983 |g number:2 |g pages:181-189 |
| 856 | 4 | 0 | |u http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 |
| 912 | |a GBV_USEFLAG_H | ||
| 912 | |a ZDB-1-SDJ | ||
| 912 | |a GBV_NL_ARTICLE | ||
| 951 | |a AR | ||
| 952 | |d 107 |j 1983 |e 2 |h 181-189 | ||
| matchkey_str |
article:00406090:1983----::eoiinfiiontiermiladhia |
|---|---|
| hierarchy_sort_str |
1983 |
| publishDate |
1983 |
| allfields |
(DE-627)NLEJ17775625X (DE-599)GBVNLZ17775625X DE-627 ger DE-627 rakwb eng Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Ron, Y. oth Raveh, A. oth Carmi, U. oth Inspektor, A. oth Avni, R. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 2, Seite 181-189 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:2 pages:181-189 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 2 181-189 |
| spelling |
(DE-627)NLEJ17775625X (DE-599)GBVNLZ17775625X DE-627 ger DE-627 rakwb eng Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Ron, Y. oth Raveh, A. oth Carmi, U. oth Inspektor, A. oth Avni, R. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 2, Seite 181-189 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:2 pages:181-189 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 2 181-189 |
| allfields_unstemmed |
(DE-627)NLEJ17775625X (DE-599)GBVNLZ17775625X DE-627 ger DE-627 rakwb eng Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Ron, Y. oth Raveh, A. oth Carmi, U. oth Inspektor, A. oth Avni, R. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 2, Seite 181-189 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:2 pages:181-189 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 2 181-189 |
| allfieldsGer |
(DE-627)NLEJ17775625X (DE-599)GBVNLZ17775625X DE-627 ger DE-627 rakwb eng Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Ron, Y. oth Raveh, A. oth Carmi, U. oth Inspektor, A. oth Avni, R. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 2, Seite 181-189 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:2 pages:181-189 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 2 181-189 |
| allfieldsSound |
(DE-627)NLEJ17775625X (DE-599)GBVNLZ17775625X DE-627 ger DE-627 rakwb eng Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Ron, Y. oth Raveh, A. oth Carmi, U. oth Inspektor, A. oth Avni, R. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 2, Seite 181-189 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:2 pages:181-189 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 2 181-189 |
| language |
English |
| source |
in Thin Solid Films 107(1983), 2, Seite 181-189 volume:107 year:1983 number:2 pages:181-189 |
| sourceStr |
in Thin Solid Films 107(1983), 2, Seite 181-189 volume:107 year:1983 number:2 pages:181-189 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| isfreeaccess_bool |
false |
| container_title |
Thin Solid Films |
| authorswithroles_txt_mv |
Ron, Y. @@oth@@ Raveh, A. @@oth@@ Carmi, U. @@oth@@ Inspektor, A. @@oth@@ Avni, R. @@oth@@ |
| publishDateDaySort_date |
1983-01-01T00:00:00Z |
| hierarchy_top_id |
NLEJ177331380 |
| id |
NLEJ17775625X |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ17775625X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706060648.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1983 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ17775625X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ17775625X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1983</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ron, Y.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Raveh, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carmi, U.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Inspektor, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Avni, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Thin Solid Films</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">107(1983), 2, Seite 181-189</subfield><subfield code="w">(DE-627)NLEJ177331380</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="x">0040-6090</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:107</subfield><subfield code="g">year:1983</subfield><subfield code="g">number:2</subfield><subfield code="g">pages:181-189</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">107</subfield><subfield code="j">1983</subfield><subfield code="e">2</subfield><subfield code="h">181-189</subfield></datafield></record></collection>
|
| series2 |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)NLEJ177331380 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| collection |
NL |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0040-6090 |
| topic_title |
Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
y r yr a r ar u c uc a i ai r a ra |
| hierarchy_parent_title |
Thin Solid Films |
| hierarchy_parent_id |
NLEJ177331380 |
| hierarchy_top_title |
Thin Solid Films |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)NLEJ177331380 (DE-600)1482896-0 |
| title |
Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| spellingShingle |
Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| ctrlnum |
(DE-627)NLEJ17775625X (DE-599)GBVNLZ17775625X |
| title_full |
Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| journal |
Thin Solid Films |
| journalStr |
Thin Solid Films |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1983 |
| contenttype_str_mv |
zzz |
| container_start_page |
181 |
| container_volume |
107 |
| format_se |
Elektronische Aufsätze |
| title_sort |
deposition of silicon nitride from sicl"4 and nh"3 in a low pressure r.f. plasma |
| title_auth |
Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| abstract |
Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. |
| abstractGer |
Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. |
| abstract_unstemmed |
Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality. |
| collection_details |
GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE |
| container_issue |
2 |
| title_short |
Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma |
| url |
http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2 |
| remote_bool |
true |
| author2 |
Ron, Y. Raveh, A. Carmi, U. Inspektor, A. Avni, R. |
| author2Str |
Ron, Y. Raveh, A. Carmi, U. Inspektor, A. Avni, R. |
| ppnlink |
NLEJ177331380 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth |
| up_date |
2024-07-06T09:56:42.063Z |
| _version_ |
1803823142206963713 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ17775625X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706060648.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1983 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ17775625X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ17775625X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Deposition of silicon nitride from SiCl"4 and NH"3 in a low pressure r.f. plasma</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1983</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Silicon nitride coatings were deposited in a low pressure (1-10 Torr) r.f. plasma from SiCl"4 and NH"3 in the presence of argon onto stainless martensitic steel grounded and floating substrates at 300 ^oC and 440 ^oC respectively. The heating of the substrates depends mainly on the position and the induced r.f. power. The coatings were identified as silicon nitride by X-ray investigation and were found to contain chlorine by energy-dispersive analysis of X-rays. The growth rate, the microhardness and the chlorine concentration of the coatings were determined as a function of the total gas pressure, the r.f. power input and the NH"3-to-SiCl"4 ratio. It was observed that the coatings on the floating substrates have higher deposition rates and are of superior quality.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ron, Y.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Raveh, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carmi, U.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Inspektor, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Avni, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Thin Solid Films</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">107(1983), 2, Seite 181-189</subfield><subfield code="w">(DE-627)NLEJ177331380</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="x">0040-6090</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:107</subfield><subfield code="g">year:1983</subfield><subfield code="g">number:2</subfield><subfield code="g">pages:181-189</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90020-2</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">107</subfield><subfield code="j">1983</subfield><subfield code="e">2</subfield><subfield code="h">181-189</subfield></datafield></record></collection>
|
| score |
7.4005013 |