On the capacitance of n-V"2O"5/p-Si heterojunctions
The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines sh...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1986 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Thin Solid Films - Amsterdam : Elsevier, 139(1986), 3, Seite 233-246 |
| Übergeordnetes Werk: |
volume:139 ; year:1986 ; number:3 ; pages:233-246 |
| Links: |
|---|
| Katalog-ID: |
NLEJ177759518 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLEJ177759518 | ||
| 003 | DE-627 | ||
| 005 | 20210706060728.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 070505s1986 xx |||||o 00| ||eng c | ||
| 035 | |a (DE-627)NLEJ177759518 | ||
| 035 | |a (DE-599)GBVNLZ177759518 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a On the capacitance of n-V"2O"5/p-Si heterojunctions |
| 264 | 1 | |c 1986 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. | ||
| 533 | |f Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 | ||
| 700 | 1 | |a Suli, A. |4 oth | |
| 700 | 1 | |a Torok, M.I. |4 oth | |
| 700 | 1 | |a Hevesi, I. |4 oth | |
| 773 | 0 | 8 | |i in |t Thin Solid Films |d Amsterdam : Elsevier |g 139(1986), 3, Seite 233-246 |w (DE-627)NLEJ177331380 |w (DE-600)1482896-0 |x 0040-6090 |7 nnns |
| 773 | 1 | 8 | |g volume:139 |g year:1986 |g number:3 |g pages:233-246 |
| 856 | 4 | 0 | |u http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 |
| 912 | |a GBV_USEFLAG_H | ||
| 912 | |a ZDB-1-SDJ | ||
| 912 | |a GBV_NL_ARTICLE | ||
| 951 | |a AR | ||
| 952 | |d 139 |j 1986 |e 3 |h 233-246 | ||
| matchkey_str |
article:00406090:1986----::nhcpctnefvopiee |
|---|---|
| hierarchy_sort_str |
1986 |
| publishDate |
1986 |
| allfields |
(DE-627)NLEJ177759518 (DE-599)GBVNLZ177759518 DE-627 ger DE-627 rakwb eng On the capacitance of n-V"2O"5/p-Si heterojunctions 1986 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 139(1986), 3, Seite 233-246 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:139 year:1986 number:3 pages:233-246 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 139 1986 3 233-246 |
| spelling |
(DE-627)NLEJ177759518 (DE-599)GBVNLZ177759518 DE-627 ger DE-627 rakwb eng On the capacitance of n-V"2O"5/p-Si heterojunctions 1986 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 139(1986), 3, Seite 233-246 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:139 year:1986 number:3 pages:233-246 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 139 1986 3 233-246 |
| allfields_unstemmed |
(DE-627)NLEJ177759518 (DE-599)GBVNLZ177759518 DE-627 ger DE-627 rakwb eng On the capacitance of n-V"2O"5/p-Si heterojunctions 1986 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 139(1986), 3, Seite 233-246 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:139 year:1986 number:3 pages:233-246 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 139 1986 3 233-246 |
| allfieldsGer |
(DE-627)NLEJ177759518 (DE-599)GBVNLZ177759518 DE-627 ger DE-627 rakwb eng On the capacitance of n-V"2O"5/p-Si heterojunctions 1986 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 139(1986), 3, Seite 233-246 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:139 year:1986 number:3 pages:233-246 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 139 1986 3 233-246 |
| allfieldsSound |
(DE-627)NLEJ177759518 (DE-599)GBVNLZ177759518 DE-627 ger DE-627 rakwb eng On the capacitance of n-V"2O"5/p-Si heterojunctions 1986 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 139(1986), 3, Seite 233-246 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:139 year:1986 number:3 pages:233-246 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 139 1986 3 233-246 |
| language |
English |
| source |
in Thin Solid Films 139(1986), 3, Seite 233-246 volume:139 year:1986 number:3 pages:233-246 |
| sourceStr |
in Thin Solid Films 139(1986), 3, Seite 233-246 volume:139 year:1986 number:3 pages:233-246 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| isfreeaccess_bool |
false |
| container_title |
Thin Solid Films |
| authorswithroles_txt_mv |
Suli, A. @@oth@@ Torok, M.I. @@oth@@ Hevesi, I. @@oth@@ |
| publishDateDaySort_date |
1986-01-01T00:00:00Z |
| hierarchy_top_id |
NLEJ177331380 |
| id |
NLEJ177759518 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ177759518</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706060728.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1986 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ177759518</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ177759518</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the capacitance of n-V"2O"5/p-Si heterojunctions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1986</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suli, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Torok, M.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hevesi, I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Thin Solid Films</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">139(1986), 3, Seite 233-246</subfield><subfield code="w">(DE-627)NLEJ177331380</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="x">0040-6090</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:139</subfield><subfield code="g">year:1986</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:233-246</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">139</subfield><subfield code="j">1986</subfield><subfield code="e">3</subfield><subfield code="h">233-246</subfield></datafield></record></collection>
|
| series2 |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)NLEJ177331380 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| collection |
NL |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0040-6090 |
| topic_title |
On the capacitance of n-V"2O"5/p-Si heterojunctions |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
a s as m t mt i h ih |
| hierarchy_parent_title |
Thin Solid Films |
| hierarchy_parent_id |
NLEJ177331380 |
| hierarchy_top_title |
Thin Solid Films |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)NLEJ177331380 (DE-600)1482896-0 |
| title |
On the capacitance of n-V"2O"5/p-Si heterojunctions |
| spellingShingle |
On the capacitance of n-V"2O"5/p-Si heterojunctions |
| ctrlnum |
(DE-627)NLEJ177759518 (DE-599)GBVNLZ177759518 |
| title_full |
On the capacitance of n-V"2O"5/p-Si heterojunctions |
| journal |
Thin Solid Films |
| journalStr |
Thin Solid Films |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1986 |
| contenttype_str_mv |
zzz |
| container_start_page |
233 |
| container_volume |
139 |
| format_se |
Elektronische Aufsätze |
| title_sort |
on the capacitance of n-v"2o"5/p-si heterojunctions |
| title_auth |
On the capacitance of n-V"2O"5/p-Si heterojunctions |
| abstract |
The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. |
| abstractGer |
The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. |
| abstract_unstemmed |
The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined. |
| collection_details |
GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE |
| container_issue |
3 |
| title_short |
On the capacitance of n-V"2O"5/p-Si heterojunctions |
| url |
http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4 |
| remote_bool |
true |
| author2 |
Suli, A. Torok, M.I. Hevesi, I. |
| author2Str |
Suli, A. Torok, M.I. Hevesi, I. |
| ppnlink |
NLEJ177331380 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth |
| up_date |
2024-07-06T09:57:13.481Z |
| _version_ |
1803823175152173056 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ177759518</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706060728.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1986 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ177759518</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ177759518</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">On the capacitance of n-V"2O"5/p-Si heterojunctions</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1986</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The capacitance and a.c. conductance of n-V "2O"5/p-Si heterojunctions were investigated in the frequency range from 5 x 10^3 to 10^5 Hz. Plots of C^-^2 against the reverse bias U yielded two straight lines for a given frequency. Both the capacitance and the slopes of the straight lines showed a frequency dependence. A break in the straight lines of C^-^2 versus U curves was interpreted as due tothe total depletion of the thin V "2O"5 layer at a certain reverse bias. It was shown that the frequency dependence of the capacitance was due to the effect of minority carriers in the depletion layer of silicon and to the effect of interface states. Equations are given to describe the capacitance under reverse bias. The existence of an SiO"2 layer of thickness 2.3 x 10^-^9 m was obtained from the saturation value of the capacitance measured under forward bias. From the results of the measurements, the concentrations of donors and acceptors and of surface states, the energy band diagram and other parameters of the heterojunction were determined.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suli, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Torok, M.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hevesi, I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Thin Solid Films</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">139(1986), 3, Seite 233-246</subfield><subfield code="w">(DE-627)NLEJ177331380</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="x">0040-6090</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:139</subfield><subfield code="g">year:1986</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:233-246</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0040-6090(86)90054-4</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">139</subfield><subfield code="j">1986</subfield><subfield code="e">3</subfield><subfield code="h">233-246</subfield></datafield></record></collection>
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