Defects, diffusion and activation in ion implanted HgCdTe
The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced...
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1990 |
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Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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in: Journal of Crystal Growth - Amsterdam : Elsevier, 86(1990), 1-4, Seite 723-734 |
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volume:86 ; year:1990 ; number:1-4 ; pages:723-734 |
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| 520 | |a The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. | ||
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(DE-627)NLEJ177762926 (DE-599)GBVNLZ177762926 DE-627 ger DE-627 rakwb eng Defects, diffusion and activation in ion implanted HgCdTe 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Bubulac, L.O. oth in Journal of Crystal Growth Amsterdam : Elsevier 86(1990), 1-4, Seite 723-734 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:86 year:1990 number:1-4 pages:723-734 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90799-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 86 1990 1-4 723-734 |
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(DE-627)NLEJ177762926 (DE-599)GBVNLZ177762926 DE-627 ger DE-627 rakwb eng Defects, diffusion and activation in ion implanted HgCdTe 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Bubulac, L.O. oth in Journal of Crystal Growth Amsterdam : Elsevier 86(1990), 1-4, Seite 723-734 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:86 year:1990 number:1-4 pages:723-734 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90799-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 86 1990 1-4 723-734 |
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(DE-627)NLEJ177762926 (DE-599)GBVNLZ177762926 DE-627 ger DE-627 rakwb eng Defects, diffusion and activation in ion implanted HgCdTe 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Bubulac, L.O. oth in Journal of Crystal Growth Amsterdam : Elsevier 86(1990), 1-4, Seite 723-734 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:86 year:1990 number:1-4 pages:723-734 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90799-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 86 1990 1-4 723-734 |
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(DE-627)NLEJ177762926 (DE-599)GBVNLZ177762926 DE-627 ger DE-627 rakwb eng Defects, diffusion and activation in ion implanted HgCdTe 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Bubulac, L.O. oth in Journal of Crystal Growth Amsterdam : Elsevier 86(1990), 1-4, Seite 723-734 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:86 year:1990 number:1-4 pages:723-734 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90799-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 86 1990 1-4 723-734 |
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(DE-627)NLEJ177762926 (DE-599)GBVNLZ177762926 DE-627 ger DE-627 rakwb eng Defects, diffusion and activation in ion implanted HgCdTe 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Bubulac, L.O. oth in Journal of Crystal Growth Amsterdam : Elsevier 86(1990), 1-4, Seite 723-734 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:86 year:1990 number:1-4 pages:723-734 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90799-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 86 1990 1-4 723-734 |
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Defects, diffusion and activation in ion implanted HgCdTe |
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The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. |
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The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. |
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The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ177762926</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706060807.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1990 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ177762926</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ177762926</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Defects, diffusion and activation in ion implanted HgCdTe</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1990</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The current understanding in junction formation by ion implantation in HgCdTe material is discussed. Two major techniques are available for junction formation: a traditional technique that consists of an ion implantation process (usually B or Be) followed by a diffusion of the irradiation-displaced mercury atoms (I^2/DMD), and a classical technique of ion implantation followed by the electrical activation of the implanted species. The activation process could be of a diffused species from the implanted source, or of the as-implanted species (I^2/AD or I^2/D, respectively). A variety of junction different in nature and electrical profile have been demonstrated. The best quality devices obtained so far in Hg"1"-"xCd"xTe material with x = 0.2 from either technique are implanted-dif fused in nature, i.e., n-on-p of I^2/DMD type (residual impurity in n-side and Hg vacancy in p-side) and p-on-n of I^2/AD type (implanted As in p-side and In in the background for n-side). Examples of the best data obtained are as follows: n-on-p devices formed by the I^2/DMD technique in a planar structure with a cutoff wavelength of λ"c/77 K = 9.37 μm had a zero bias resistance-area product of R"0A/40 K = 4.9x10^6 Ω cm^2; and p-on-n devices formed by I^2/AD with As implants in a mesa structure with λ"c/77 K = 9.0 μm had "0A/40 K = 3.7x10^6 Ω cm^2.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bubulac, L.O.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of Crystal Growth</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">86(1990), 1-4, Seite 723-734</subfield><subfield code="w">(DE-627)NLEJ177047224</subfield><subfield code="w">(DE-600)1466514-1</subfield><subfield code="x">0022-0248</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:86</subfield><subfield code="g">year:1990</subfield><subfield code="g">number:1-4</subfield><subfield code="g">pages:723-734</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0022-0248(90)90799-Q</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">86</subfield><subfield code="j">1990</subfield><subfield code="e">1-4</subfield><subfield code="h">723-734</subfield></datafield></record></collection>
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