1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy
For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range...
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1994 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Journal of Crystal Growth - Amsterdam : Elsevier, 145(1994), 1-4, Seite 249-255 |
| Übergeordnetes Werk: |
volume:145 ; year:1994 ; number:1-4 ; pages:249-255 |
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| 245 | 1 | 0 | |a 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy |
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| 520 | |a For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. | ||
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(DE-627)NLEJ177764015 (DE-599)GBVNLZ177764015 DE-627 ger DE-627 rakwb eng 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy 1994 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suzuki, M. oth Aoki, M. oth Tsuchiya, T. oth Taniwatari, T. oth in Journal of Crystal Growth Amsterdam : Elsevier 145(1994), 1-4, Seite 249-255 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:145 year:1994 number:1-4 pages:249-255 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91059-6 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 145 1994 1-4 249-255 |
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(DE-627)NLEJ177764015 (DE-599)GBVNLZ177764015 DE-627 ger DE-627 rakwb eng 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy 1994 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suzuki, M. oth Aoki, M. oth Tsuchiya, T. oth Taniwatari, T. oth in Journal of Crystal Growth Amsterdam : Elsevier 145(1994), 1-4, Seite 249-255 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:145 year:1994 number:1-4 pages:249-255 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91059-6 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 145 1994 1-4 249-255 |
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(DE-627)NLEJ177764015 (DE-599)GBVNLZ177764015 DE-627 ger DE-627 rakwb eng 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy 1994 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suzuki, M. oth Aoki, M. oth Tsuchiya, T. oth Taniwatari, T. oth in Journal of Crystal Growth Amsterdam : Elsevier 145(1994), 1-4, Seite 249-255 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:145 year:1994 number:1-4 pages:249-255 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91059-6 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 145 1994 1-4 249-255 |
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(DE-627)NLEJ177764015 (DE-599)GBVNLZ177764015 DE-627 ger DE-627 rakwb eng 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy 1994 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suzuki, M. oth Aoki, M. oth Tsuchiya, T. oth Taniwatari, T. oth in Journal of Crystal Growth Amsterdam : Elsevier 145(1994), 1-4, Seite 249-255 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:145 year:1994 number:1-4 pages:249-255 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91059-6 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 145 1994 1-4 249-255 |
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(DE-627)NLEJ177764015 (DE-599)GBVNLZ177764015 DE-627 ger DE-627 rakwb eng 1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy 1994 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Suzuki, M. oth Aoki, M. oth Tsuchiya, T. oth Taniwatari, T. oth in Journal of Crystal Growth Amsterdam : Elsevier 145(1994), 1-4, Seite 249-255 (DE-627)NLEJ177047224 (DE-600)1466514-1 0022-0248 nnns volume:145 year:1994 number:1-4 pages:249-255 http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91059-6 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 145 1994 1-4 249-255 |
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1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy |
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For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. |
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For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. |
| abstract_unstemmed |
For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ177764015</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706060821.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1994 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ177764015</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ177764015</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">1.24-1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1994</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">For the purpose of achieving a wide variety of photonic integrated circuits application, optimum selective mask design in selective-area metalorganic vapor phase epitaxy (MOVPE) is experimentally investigated in order to obtain multiple quantum well (MQW) layers with wide bandgap controllable range and with high optical crystal quality. Dependence of compositional change and layer flatness on mask size was systematically examined for selectively grown InGaAs/InP layers. We found that the open space width between SiO"2 stripes is a key design parameter for obtaining uniform distribution of thickness and good characteristics in photoluminescence. The open space width was therefore optimized to be 10μm or more in our growth conditions, which is much larger than the effective surface migration length and smaller than the vapor phase diffusion length of group III species. Based on this mask design, we demonstrated an extremely wide quantum energy tuning range of 253 meV for simultaneously grown InGaAs/InP MQW structures. High luminescence efficiency was maintained throughout the tuning range.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suzuki, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Aoki, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Tsuchiya, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Taniwatari, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of Crystal Growth</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">145(1994), 1-4, Seite 249-255</subfield><subfield code="w">(DE-627)NLEJ177047224</subfield><subfield code="w">(DE-600)1466514-1</subfield><subfield code="x">0022-0248</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:145</subfield><subfield code="g">year:1994</subfield><subfield code="g">number:1-4</subfield><subfield code="g">pages:249-255</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0022-0248(94)91059-6</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">145</subfield><subfield code="j">1994</subfield><subfield code="e">1-4</subfield><subfield code="h">249-255</subfield></datafield></record></collection>
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