Stability of the structure of dielectric films on silicon
The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of vari...
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1980 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Thin Solid Films - Amsterdam : Elsevier, 66(1980), 1, Seite 85-90 |
| Übergeordnetes Werk: |
volume:66 ; year:1980 ; number:1 ; pages:85-90 |
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| 520 | |a The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. | ||
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(DE-627)NLEJ177982543 (DE-599)GBVNLZ177982543 DE-627 ger DE-627 rakwb eng Stability of the structure of dielectric films on silicon 1980 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Aleksandrov, L.N. oth Edelman, F.L. oth in Thin Solid Films Amsterdam : Elsevier 66(1980), 1, Seite 85-90 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:66 year:1980 number:1 pages:85-90 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(80)90074-7 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 66 1980 1 85-90 |
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(DE-627)NLEJ177982543 (DE-599)GBVNLZ177982543 DE-627 ger DE-627 rakwb eng Stability of the structure of dielectric films on silicon 1980 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Aleksandrov, L.N. oth Edelman, F.L. oth in Thin Solid Films Amsterdam : Elsevier 66(1980), 1, Seite 85-90 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:66 year:1980 number:1 pages:85-90 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(80)90074-7 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 66 1980 1 85-90 |
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(DE-627)NLEJ177982543 (DE-599)GBVNLZ177982543 DE-627 ger DE-627 rakwb eng Stability of the structure of dielectric films on silicon 1980 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Aleksandrov, L.N. oth Edelman, F.L. oth in Thin Solid Films Amsterdam : Elsevier 66(1980), 1, Seite 85-90 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:66 year:1980 number:1 pages:85-90 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(80)90074-7 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 66 1980 1 85-90 |
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(DE-627)NLEJ177982543 (DE-599)GBVNLZ177982543 DE-627 ger DE-627 rakwb eng Stability of the structure of dielectric films on silicon 1980 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Aleksandrov, L.N. oth Edelman, F.L. oth in Thin Solid Films Amsterdam : Elsevier 66(1980), 1, Seite 85-90 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:66 year:1980 number:1 pages:85-90 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(80)90074-7 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 66 1980 1 85-90 |
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(DE-627)NLEJ177982543 (DE-599)GBVNLZ177982543 DE-627 ger DE-627 rakwb eng Stability of the structure of dielectric films on silicon 1980 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Aleksandrov, L.N. oth Edelman, F.L. oth in Thin Solid Films Amsterdam : Elsevier 66(1980), 1, Seite 85-90 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:66 year:1980 number:1 pages:85-90 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(80)90074-7 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 66 1980 1 85-90 |
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stability of the structure of dielectric films on silicon |
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Stability of the structure of dielectric films on silicon |
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The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. |
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The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. |
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The amorphous-to-crystalline transition of dielectric films is discussed in terms of experiments on the thermal treatment of the silicon-dielectric (silica, silicon nitride, silicon oxynitride etc.) system. Temperature-time limits for the amorphous-to-crystalline transition and the influence of various factors on the degree of transformation were determined. An orientation effect for crystallization of the dielectric films was found. The process of ''shock crystallization'', which was first found for dielectrics, is analysed. |
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