Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures
Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are re...
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1987 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Journal of Physics and Chemistry of Solids - Amsterdam : Elsevier, 48(1987), 12, Seite 1173-1184 |
| Übergeordnetes Werk: |
volume:48 ; year:1987 ; number:12 ; pages:1173-1184 |
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| 245 | 1 | 0 | |a Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures |
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| 520 | |a Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. | ||
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(DE-627)NLEJ178241598 (DE-599)GBVNLZ178241598 DE-627 ger DE-627 rakwb eng Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Shen, Y.-T. oth Myles, C.W. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 48(1987), 12, Seite 1173-1184 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:48 year:1987 number:12 pages:1173-1184 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(87)90003-5 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 48 1987 12 1173-1184 |
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(DE-627)NLEJ178241598 (DE-599)GBVNLZ178241598 DE-627 ger DE-627 rakwb eng Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Shen, Y.-T. oth Myles, C.W. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 48(1987), 12, Seite 1173-1184 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:48 year:1987 number:12 pages:1173-1184 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(87)90003-5 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 48 1987 12 1173-1184 |
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(DE-627)NLEJ178241598 (DE-599)GBVNLZ178241598 DE-627 ger DE-627 rakwb eng Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Shen, Y.-T. oth Myles, C.W. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 48(1987), 12, Seite 1173-1184 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:48 year:1987 number:12 pages:1173-1184 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(87)90003-5 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 48 1987 12 1173-1184 |
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(DE-627)NLEJ178241598 (DE-599)GBVNLZ178241598 DE-627 ger DE-627 rakwb eng Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Shen, Y.-T. oth Myles, C.W. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 48(1987), 12, Seite 1173-1184 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:48 year:1987 number:12 pages:1173-1184 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(87)90003-5 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 48 1987 12 1173-1184 |
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(DE-627)NLEJ178241598 (DE-599)GBVNLZ178241598 DE-627 ger DE-627 rakwb eng Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Shen, Y.-T. oth Myles, C.W. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 48(1987), 12, Seite 1173-1184 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:48 year:1987 number:12 pages:1173-1184 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(87)90003-5 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 48 1987 12 1173-1184 |
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Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures |
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Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. |
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Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. |
| abstract_unstemmed |
Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ178241598</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230506153533.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1987 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ178241598</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ178241598</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electronic structure of ternary semiconductor alloys: CPA calculations using sp^3s^* bandstructures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1987</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Coherent potential approximation (CPA) calculations of the electronic structure of the III-V ternary alloys GaAs"1"-"x P"x, Ga"x In"1"-"x As, Ga"x Al"1"-"xAs, Ga"x In"1"-"x P, and GaSb"1"-"xP"x are reported. Results are presented for the CPA self-energies, state densities, and band-bowing functions for these materials. The calculations utilize the sp^3s^* bandstructures as input into the Chen and Sher CPA formalism. The present work is the first utilization of these bandstructures in CPA calculations for ternary alloys and the first CPA treatment ofGaSb"1"-"xP"x. In qualitative agreement with previous studies, the results of these calculations show that alloy disorder effects are small for GaAs"1"-"xP"x, of moderate importance for Ga"xIn"1"-"xAs and Ga"xAl"1"-"xAs, and relatively large for Ga"xIn"1"-"xP. However, such effects are found to be significant for GaSb"1"-"xP"x, with this alloy predicted to be in the strong scattering regime.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shen, Y.-T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Myles, C.W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of Physics and Chemistry of Solids</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">48(1987), 12, Seite 1173-1184</subfield><subfield code="w">(DE-627)NLEJ177273895</subfield><subfield code="w">(DE-600)1491914-X</subfield><subfield code="x">0022-3697</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:48</subfield><subfield code="g">year:1987</subfield><subfield code="g">number:12</subfield><subfield code="g">pages:1173-1184</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0022-3697(87)90003-5</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">48</subfield><subfield code="j">1987</subfield><subfield code="e">12</subfield><subfield code="h">1173-1184</subfield></datafield></record></collection>
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