The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B
Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For sing...
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1965 |
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Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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in: Journal of Physics and Chemistry of Solids - Amsterdam : Elsevier, 26(1965), 1, Seite 163-171 |
| Übergeordnetes Werk: |
volume:26 ; year:1965 ; number:1 ; pages:163-171 |
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| 245 | 1 | 4 | |a The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B |
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| 520 | |a Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. | ||
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(DE-627)NLEJ178390658 (DE-599)GBVNLZ178390658 DE-627 ger DE-627 rakwb eng The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B 1965 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Masumoto, K. oth Isomura, S. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 26(1965), 1, Seite 163-171 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:26 year:1965 number:1 pages:163-171 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(65)90083-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 26 1965 1 163-171 |
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(DE-627)NLEJ178390658 (DE-599)GBVNLZ178390658 DE-627 ger DE-627 rakwb eng The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B 1965 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Masumoto, K. oth Isomura, S. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 26(1965), 1, Seite 163-171 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:26 year:1965 number:1 pages:163-171 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(65)90083-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 26 1965 1 163-171 |
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(DE-627)NLEJ178390658 (DE-599)GBVNLZ178390658 DE-627 ger DE-627 rakwb eng The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B 1965 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Masumoto, K. oth Isomura, S. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 26(1965), 1, Seite 163-171 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:26 year:1965 number:1 pages:163-171 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(65)90083-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 26 1965 1 163-171 |
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(DE-627)NLEJ178390658 (DE-599)GBVNLZ178390658 DE-627 ger DE-627 rakwb eng The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B 1965 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Masumoto, K. oth Isomura, S. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 26(1965), 1, Seite 163-171 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:26 year:1965 number:1 pages:163-171 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(65)90083-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 26 1965 1 163-171 |
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(DE-627)NLEJ178390658 (DE-599)GBVNLZ178390658 DE-627 ger DE-627 rakwb eng The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B 1965 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Masumoto, K. oth Isomura, S. oth in Journal of Physics and Chemistry of Solids Amsterdam : Elsevier 26(1965), 1, Seite 163-171 (DE-627)NLEJ177273895 (DE-600)1491914-X 0022-3697 nnns volume:26 year:1965 number:1 pages:163-171 http://linkinghub.elsevier.com/retrieve/pii/0022-3697(65)90083-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 26 1965 1 163-171 |
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The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B |
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Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. |
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Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. |
| abstract_unstemmed |
Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ178390658</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230506165558.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1965 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ178390658</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ178390658</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The preparation and semiconducting properties of single crystals of ZnSnAs"2 compound B</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1965</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Large single crystals of a semiconducting inter-metallic compound ZnSnAs"2 have been grown by Bridgman method. Their electrical and optical properties have been studied as a function of temperature.Single crystals of ZnSnAs"2 show p-type conductivity and cleave on the (110) plane. For single crystals having the chalcopyrite structure, a hole mobility of 130 cm^2/V-sec and a carrier concentration of 1.2 x 10^1^8/cm^3 are observed at room temperature. From the slope of the intrinsic resistivity, the width of the forbidden energy gap is estimated to be 0.59 eV at 0^oK. The mobility ratios found by the usual procedure from the Hall coefficient maximum and determined from the resistivity data by the method derived by Hunter are 9 and 12, respectively. From the Seebeck coefficient data for 296^oK and 557^oK, the effective mass of holes is calculated to be 0.43m"0 and 0.59m"0 respectively, and the relaxation time is found to be 2.6 x 10^-^1^4 sec at 296^oK. The infrared absorption edge gives an estimate of 0.66 eV for the energy gap for direct transitions at room temperature, and extrapolation of the results for the temperature range from 88^oK to 296^oK gives a value of 0.74 eV at 0^oK. For the disordered zinc-blende structure, a resistivity of the order of 10^-^3 Ω-cm and a carrier concentration of the order of 10^1^9/cm^3 are obtained at room temperature.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Masumoto, K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Isomura, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of Physics and Chemistry of Solids</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">26(1965), 1, Seite 163-171</subfield><subfield code="w">(DE-627)NLEJ177273895</subfield><subfield code="w">(DE-600)1491914-X</subfield><subfield code="x">0022-3697</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:26</subfield><subfield code="g">year:1965</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:163-171</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0022-3697(65)90083-1</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">26</subfield><subfield code="j">1965</subfield><subfield code="e">1</subfield><subfield code="h">163-171</subfield></datafield></record></collection>
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