Carrier transport mechanisms in the V"2O"5-n-Si system
The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V&...
Ausführliche Beschreibung
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1977 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Thin Solid Films - Amsterdam : Elsevier, 42(1977), 1, Seite 17-32 |
| Übergeordnetes Werk: |
volume:42 ; year:1977 ; number:1 ; pages:17-32 |
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NLEJ178453390 |
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| 245 | 1 | 0 | |a Carrier transport mechanisms in the V"2O"5-n-Si system |
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| 520 | |a The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. | ||
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(DE-627)NLEJ178453390 (DE-599)GBVNLZ178453390 DE-627 ger DE-627 rakwb eng Carrier transport mechanisms in the V"2O"5-n-Si system 1977 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mackus, P. oth Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 42(1977), 1, Seite 17-32 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:42 year:1977 number:1 pages:17-32 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(77)90075-X GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 42 1977 1 17-32 |
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(DE-627)NLEJ178453390 (DE-599)GBVNLZ178453390 DE-627 ger DE-627 rakwb eng Carrier transport mechanisms in the V"2O"5-n-Si system 1977 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mackus, P. oth Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 42(1977), 1, Seite 17-32 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:42 year:1977 number:1 pages:17-32 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(77)90075-X GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 42 1977 1 17-32 |
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(DE-627)NLEJ178453390 (DE-599)GBVNLZ178453390 DE-627 ger DE-627 rakwb eng Carrier transport mechanisms in the V"2O"5-n-Si system 1977 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mackus, P. oth Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 42(1977), 1, Seite 17-32 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:42 year:1977 number:1 pages:17-32 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(77)90075-X GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 42 1977 1 17-32 |
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(DE-627)NLEJ178453390 (DE-599)GBVNLZ178453390 DE-627 ger DE-627 rakwb eng Carrier transport mechanisms in the V"2O"5-n-Si system 1977 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mackus, P. oth Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 42(1977), 1, Seite 17-32 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:42 year:1977 number:1 pages:17-32 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(77)90075-X GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 42 1977 1 17-32 |
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(DE-627)NLEJ178453390 (DE-599)GBVNLZ178453390 DE-627 ger DE-627 rakwb eng Carrier transport mechanisms in the V"2O"5-n-Si system 1977 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mackus, P. oth Suli, A. oth Torok, M.I. oth Hevesi, I. oth in Thin Solid Films Amsterdam : Elsevier 42(1977), 1, Seite 17-32 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:42 year:1977 number:1 pages:17-32 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(77)90075-X GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 42 1977 1 17-32 |
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Carrier transport mechanisms in the V"2O"5-n-Si system |
| abstract |
The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. |
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The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. |
| abstract_unstemmed |
The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ178453390</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706075143.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1977 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ178453390</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ178453390</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Carrier transport mechanisms in the V"2O"5-n-Si system</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1977</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The mechanisms of carrier transport were investigated by measuring the I-V characteristics and the capacitance in a V"2O"5-n-Si system which was produced by evaporation and oxidation of vanadium onto silicon single-crystal plates. Potential barriers of 0.52 and 0.37 eV were found at the V"2O"5-n-Si interface as well as barriers of 0.1 eV at the V"2O"5 pre-interface regions for both n-Si and the gold electrode. The dependence on voltage of the height of the barriers leads to different carrier transport processes depending upon the magnitude and the polarity of the applied voltage. The conduction mechanisms occurring in this system include high field effects such as Poole-Frenkel, Schottky and Fowler-Nordheim emission as well as space charge injection. A thin SiO"2 layer about 8 Å thick was detected between the n-Si and the V"2O"5 layer. The structure of the V"2O"5 film was found to be amorphous rather than crystalline. The parameters of this V"2O"5 layer were evaluated.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mackus, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Suli, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Torok, M.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hevesi, I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Thin Solid Films</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">42(1977), 1, Seite 17-32</subfield><subfield code="w">(DE-627)NLEJ177331380</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="x">0040-6090</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:42</subfield><subfield code="g">year:1977</subfield><subfield code="g">number:1</subfield><subfield code="g">pages:17-32</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0040-6090(77)90075-X</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">42</subfield><subfield code="j">1977</subfield><subfield code="e">1</subfield><subfield code="h">17-32</subfield></datafield></record></collection>
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7.399864 |