Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures
The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (...
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1983 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Thin Solid Films - Amsterdam : Elsevier, 107(1983), 3, Seite 235-244 |
| Übergeordnetes Werk: |
volume:107 ; year:1983 ; number:3 ; pages:235-244 |
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| 245 | 1 | 0 | |a Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
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| 520 | |a The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. | ||
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(DE-627)NLEJ178469343 (DE-599)GBVNLZ178469343 DE-627 ger DE-627 rakwb eng Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Avni, R. oth Carmi, U. oth Rosenthal, I. oth Manory, R. oth Grill, A. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 3, Seite 235-244 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:3 pages:235-244 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90402-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 3 235-244 |
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(DE-627)NLEJ178469343 (DE-599)GBVNLZ178469343 DE-627 ger DE-627 rakwb eng Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Avni, R. oth Carmi, U. oth Rosenthal, I. oth Manory, R. oth Grill, A. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 3, Seite 235-244 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:3 pages:235-244 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90402-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 3 235-244 |
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(DE-627)NLEJ178469343 (DE-599)GBVNLZ178469343 DE-627 ger DE-627 rakwb eng Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Avni, R. oth Carmi, U. oth Rosenthal, I. oth Manory, R. oth Grill, A. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 3, Seite 235-244 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:3 pages:235-244 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90402-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 3 235-244 |
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(DE-627)NLEJ178469343 (DE-599)GBVNLZ178469343 DE-627 ger DE-627 rakwb eng Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Avni, R. oth Carmi, U. oth Rosenthal, I. oth Manory, R. oth Grill, A. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 3, Seite 235-244 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:3 pages:235-244 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90402-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 3 235-244 |
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(DE-627)NLEJ178469343 (DE-599)GBVNLZ178469343 DE-627 ger DE-627 rakwb eng Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures 1983 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Avni, R. oth Carmi, U. oth Rosenthal, I. oth Manory, R. oth Grill, A. oth in Thin Solid Films Amsterdam : Elsevier 107(1983), 3, Seite 235-244 (DE-627)NLEJ177331380 (DE-600)1482896-0 0040-6090 nnns volume:107 year:1983 number:3 pages:235-244 http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90402-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 107 1983 3 235-244 |
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Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
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Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
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Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
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Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
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dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
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Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures |
| abstract |
The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. |
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The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. |
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The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ178469343</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706075351.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1983 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ178469343</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ178469343</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1983</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The dissociation mechanism of SiCl"4 to silicon by plasmas with argon or in mixtures of argon and H"2 was investigated by sampling the microwave-induced plasma and its chemical components by using (i) an electrostatic double-floating-probe system (DFPS), (ii) quadrupole mass spectrometry (QMS) and (iii) electron spin resonance (ESR). Plasma diagnostics, i.e. measurements of the mean electron energy and the density of positive ions, were performed using DFPS. The reaction rates for chlorosilane fragmentation, polymerization and silicon formation in the plasma state were evaluated by QMS sampling of the plasma along the gas flow. ESR was used to investigate the amounts of free radicals adsorbed on solid alumina from different regions of the plasmas.From a comparison of the two plasmas (SiCl"4Ar with SiCl"4ArH"2), it was found that the dissociation of SiCl"4 to silicon in the argon plasma is mainly controlled by an ion-molecule mechanism, whereas the dissociation in the presence of H"2 is mainly controlled by a radical mechanism. The suggested deposition mechanisms are supported by deposition rates measured for grounded or electrically floating stainless steel substrates in the two plasmas.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Avni, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carmi, U.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rosenthal, I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Manory, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grill, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Thin Solid Films</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">107(1983), 3, Seite 235-244</subfield><subfield code="w">(DE-627)NLEJ177331380</subfield><subfield code="w">(DE-600)1482896-0</subfield><subfield code="x">0040-6090</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:107</subfield><subfield code="g">year:1983</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:235-244</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0040-6090(83)90402-9</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">107</subfield><subfield code="j">1983</subfield><subfield code="e">3</subfield><subfield code="h">235-244</subfield></datafield></record></collection>
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