EPR centres at a gas-solid interface induced by a microwave gas plasma
Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder paramete...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1978 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Surface Science - Amsterdam : Elsevier, 75(1978), 4, Seite 681-688 |
| Übergeordnetes Werk: |
volume:75 ; year:1978 ; number:4 ; pages:681-688 |
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NLEJ178478180 |
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| 520 | |a Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. | ||
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(DE-627)NLEJ178478180 (DE-599)GBVNLZ178478180 DE-627 ger DE-627 rakwb eng EPR centres at a gas-solid interface induced by a microwave gas plasma 1978 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Lemke, B.P. oth Haneman, D. oth in Surface Science Amsterdam : Elsevier 75(1978), 4, Seite 681-688 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:75 year:1978 number:4 pages:681-688 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(78)90185-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 75 1978 4 681-688 |
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(DE-627)NLEJ178478180 (DE-599)GBVNLZ178478180 DE-627 ger DE-627 rakwb eng EPR centres at a gas-solid interface induced by a microwave gas plasma 1978 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Lemke, B.P. oth Haneman, D. oth in Surface Science Amsterdam : Elsevier 75(1978), 4, Seite 681-688 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:75 year:1978 number:4 pages:681-688 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(78)90185-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 75 1978 4 681-688 |
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(DE-627)NLEJ178478180 (DE-599)GBVNLZ178478180 DE-627 ger DE-627 rakwb eng EPR centres at a gas-solid interface induced by a microwave gas plasma 1978 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Lemke, B.P. oth Haneman, D. oth in Surface Science Amsterdam : Elsevier 75(1978), 4, Seite 681-688 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:75 year:1978 number:4 pages:681-688 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(78)90185-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 75 1978 4 681-688 |
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(DE-627)NLEJ178478180 (DE-599)GBVNLZ178478180 DE-627 ger DE-627 rakwb eng EPR centres at a gas-solid interface induced by a microwave gas plasma 1978 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Lemke, B.P. oth Haneman, D. oth in Surface Science Amsterdam : Elsevier 75(1978), 4, Seite 681-688 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:75 year:1978 number:4 pages:681-688 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(78)90185-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 75 1978 4 681-688 |
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(DE-627)NLEJ178478180 (DE-599)GBVNLZ178478180 DE-627 ger DE-627 rakwb eng EPR centres at a gas-solid interface induced by a microwave gas plasma 1978 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Lemke, B.P. oth Haneman, D. oth in Surface Science Amsterdam : Elsevier 75(1978), 4, Seite 681-688 (DE-627)NLEJ177260874 (DE-600)1479030-0 0039-6028 nnns volume:75 year:1978 number:4 pages:681-688 http://linkinghub.elsevier.com/retrieve/pii/0039-6028(78)90185-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 75 1978 4 681-688 |
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epr centres at a gas-solid interface induced by a microwave gas plasma |
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EPR centres at a gas-solid interface induced by a microwave gas plasma |
| abstract |
Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. |
| abstractGer |
Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. |
| abstract_unstemmed |
Details are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O^-"3 were induced on the surfaces at 100 K. The powder parameters were g"1 = 2.016, g"2 = 2.007 and g"3 = 2.000. For sapphire rods at 80 K, a signal was found similar to that previously observed on gamma-irradiated, oxygen exposed sapphire. The evidence enables identification as O^-"2 on Al in the surfaces, g = 2.040, g = 2.001. For quartz at 100 K, the major EPR centres were similar to those from gamma irradiated quartz and appeared to be of bulk nature, unaffected by gas pressure and ascribed to plasma activated impurity defect centres. |
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