A study of two deep electron traps in ZnSe crystals
The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity.
Gespeichert in:
| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1988 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Journal of Luminescence - Amsterdam : Elsevier, 40-41(1988), Seite 333-334 |
| Übergeordnetes Werk: |
volume:40-41 ; year:1988 ; pages:333-334 |
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| 245 | 1 | 2 | |a A study of two deep electron traps in ZnSe crystals |
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| 520 | |a The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. | ||
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(DE-627)NLEJ178787507 (DE-599)GBVNLZ178787507 DE-627 ger DE-627 rakwb eng A study of two deep electron traps in ZnSe crystals 1988 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Wang, S. oth Fan (X.W. Fan), X. oth in Journal of Luminescence Amsterdam : Elsevier 40-41(1988), Seite 333-334 (DE-627)NLEJ177365013 (DE-600)1491401-3 0022-2313 nnns volume:40-41 year:1988 pages:333-334 http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90219-0 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 40-41 1988 333-334 |
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(DE-627)NLEJ178787507 (DE-599)GBVNLZ178787507 DE-627 ger DE-627 rakwb eng A study of two deep electron traps in ZnSe crystals 1988 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Wang, S. oth Fan (X.W. Fan), X. oth in Journal of Luminescence Amsterdam : Elsevier 40-41(1988), Seite 333-334 (DE-627)NLEJ177365013 (DE-600)1491401-3 0022-2313 nnns volume:40-41 year:1988 pages:333-334 http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90219-0 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 40-41 1988 333-334 |
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(DE-627)NLEJ178787507 (DE-599)GBVNLZ178787507 DE-627 ger DE-627 rakwb eng A study of two deep electron traps in ZnSe crystals 1988 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Wang, S. oth Fan (X.W. Fan), X. oth in Journal of Luminescence Amsterdam : Elsevier 40-41(1988), Seite 333-334 (DE-627)NLEJ177365013 (DE-600)1491401-3 0022-2313 nnns volume:40-41 year:1988 pages:333-334 http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90219-0 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 40-41 1988 333-334 |
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(DE-627)NLEJ178787507 (DE-599)GBVNLZ178787507 DE-627 ger DE-627 rakwb eng A study of two deep electron traps in ZnSe crystals 1988 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Wang, S. oth Fan (X.W. Fan), X. oth in Journal of Luminescence Amsterdam : Elsevier 40-41(1988), Seite 333-334 (DE-627)NLEJ177365013 (DE-600)1491401-3 0022-2313 nnns volume:40-41 year:1988 pages:333-334 http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90219-0 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 40-41 1988 333-334 |
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(DE-627)NLEJ178787507 (DE-599)GBVNLZ178787507 DE-627 ger DE-627 rakwb eng A study of two deep electron traps in ZnSe crystals 1988 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Wang, S. oth Fan (X.W. Fan), X. oth in Journal of Luminescence Amsterdam : Elsevier 40-41(1988), Seite 333-334 (DE-627)NLEJ177365013 (DE-600)1491401-3 0022-2313 nnns volume:40-41 year:1988 pages:333-334 http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90219-0 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 40-41 1988 333-334 |
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A study of two deep electron traps in ZnSe crystals |
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The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. |
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The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. |
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The properties of two deep electron traps with activation energies E"C-0.29eV and E"C-0.33eV in ZnSe crystals are studied by ODLTS and DLTS techniques. The former trap is attributed to a defect and the latter is ascribed to an impurity or a complex center associated with an impurity. |
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