Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique
Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is sho...
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1989 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Solid State Communications - Amsterdam : Elsevier, 72(1989), 8, Seite 795-798 |
| Übergeordnetes Werk: |
volume:72 ; year:1989 ; number:8 ; pages:795-798 |
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| 245 | 1 | 0 | |a Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique |
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| 520 | |a Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. | ||
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(DE-627)NLEJ179193953 (DE-599)GBVNLZ179193953 DE-627 ger DE-627 rakwb eng Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mebarki, M. oth Kadri, A. oth Mani, H. oth in Solid State Communications Amsterdam : Elsevier 72(1989), 8, Seite 795-798 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:72 year:1989 number:8 pages:795-798 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(89)90911-3 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 72 1989 8 795-798 |
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(DE-627)NLEJ179193953 (DE-599)GBVNLZ179193953 DE-627 ger DE-627 rakwb eng Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mebarki, M. oth Kadri, A. oth Mani, H. oth in Solid State Communications Amsterdam : Elsevier 72(1989), 8, Seite 795-798 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:72 year:1989 number:8 pages:795-798 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(89)90911-3 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 72 1989 8 795-798 |
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(DE-627)NLEJ179193953 (DE-599)GBVNLZ179193953 DE-627 ger DE-627 rakwb eng Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mebarki, M. oth Kadri, A. oth Mani, H. oth in Solid State Communications Amsterdam : Elsevier 72(1989), 8, Seite 795-798 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:72 year:1989 number:8 pages:795-798 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(89)90911-3 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 72 1989 8 795-798 |
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(DE-627)NLEJ179193953 (DE-599)GBVNLZ179193953 DE-627 ger DE-627 rakwb eng Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mebarki, M. oth Kadri, A. oth Mani, H. oth in Solid State Communications Amsterdam : Elsevier 72(1989), 8, Seite 795-798 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:72 year:1989 number:8 pages:795-798 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(89)90911-3 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 72 1989 8 795-798 |
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(DE-627)NLEJ179193953 (DE-599)GBVNLZ179193953 DE-627 ger DE-627 rakwb eng Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Mebarki, M. oth Kadri, A. oth Mani, H. oth in Solid State Communications Amsterdam : Elsevier 72(1989), 8, Seite 795-798 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:72 year:1989 number:8 pages:795-798 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(89)90911-3 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 72 1989 8 795-798 |
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Electrical characteristics and energy-band offsets in n-InAs"0"."8"9Sb"0"."1"1/n-GaSb heterojunctions grown by the liquid phase epitaxy technique |
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Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. |
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Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. |
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Liquid-Phase-Epitaxy (L.P.E.) grown heterojunctions of n-type InAs"0"."8"9Sb"0"."1"1 lattice-matched to n-type Te-doped GaSb(100) substrates, were studied by capacitance-voltage measurements at T = 77 K. By using the electric displacement continuity, it is shown that the band-lineup of this material is of the broken type with conduction-band and valence-band offsets ΔE"c = 0.82eV and ΔE"v = 0.36. The electron affinity of InAs"0"."8"9Sb"0"."1"1 alloy is also determined to be X = 4.87 eV. |
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