The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe
Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mob...
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Gespeichert in:
| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1987 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Infrared Physics - Amsterdam : Elsevier, 27(1987), 4, Seite 249-252 |
| Übergeordnetes Werk: |
volume:27 ; year:1987 ; number:4 ; pages:249-252 |
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| 245 | 1 | 4 | |a The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe |
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| 520 | |a Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. | ||
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(DE-627)NLEJ179226215 (DE-599)GBVNLZ179226215 DE-627 ger DE-627 rakwb eng The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Sizov, F.F. oth Plyatsko, S.V. oth Darchuk, S.D. oth in Infrared Physics Amsterdam : Elsevier 27(1987), 4, Seite 249-252 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:27 year:1987 number:4 pages:249-252 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(87)90060-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 27 1987 4 249-252 |
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(DE-627)NLEJ179226215 (DE-599)GBVNLZ179226215 DE-627 ger DE-627 rakwb eng The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Sizov, F.F. oth Plyatsko, S.V. oth Darchuk, S.D. oth in Infrared Physics Amsterdam : Elsevier 27(1987), 4, Seite 249-252 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:27 year:1987 number:4 pages:249-252 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(87)90060-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 27 1987 4 249-252 |
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(DE-627)NLEJ179226215 (DE-599)GBVNLZ179226215 DE-627 ger DE-627 rakwb eng The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Sizov, F.F. oth Plyatsko, S.V. oth Darchuk, S.D. oth in Infrared Physics Amsterdam : Elsevier 27(1987), 4, Seite 249-252 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:27 year:1987 number:4 pages:249-252 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(87)90060-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 27 1987 4 249-252 |
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(DE-627)NLEJ179226215 (DE-599)GBVNLZ179226215 DE-627 ger DE-627 rakwb eng The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Sizov, F.F. oth Plyatsko, S.V. oth Darchuk, S.D. oth in Infrared Physics Amsterdam : Elsevier 27(1987), 4, Seite 249-252 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:27 year:1987 number:4 pages:249-252 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(87)90060-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 27 1987 4 249-252 |
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(DE-627)NLEJ179226215 (DE-599)GBVNLZ179226215 DE-627 ger DE-627 rakwb eng The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Sizov, F.F. oth Plyatsko, S.V. oth Darchuk, S.D. oth in Infrared Physics Amsterdam : Elsevier 27(1987), 4, Seite 249-252 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:27 year:1987 number:4 pages:249-252 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(87)90060-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 27 1987 4 249-252 |
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The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe |
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Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. |
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Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. |
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Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ179226215</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706094345.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1987 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ179226215</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ179226215</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="4"><subfield code="a">The laser-irradiated transformation of intrinsic and impurity defects in narrow-gap Pb"1" "-" "xSn"xTe</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1987</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Changes in the electrical and optical properties of the narrow-gap solid solution Pb"1" "-" "xSn"xTe (0 =<x=< 0.20) after IR laser radiation treatment were investigated. The considerable reduction (by a factor of ~10^2) of hole concentration and a gain in hole mobility was established. Transformation of the EPR spectra of Mn doped PbTe was also observed.The observed changes in the properties of Pb"1" "-" "xSn"xTe single crystals are connected with the transformation of the intrinsic and impurity defect states of Pb"1" "-" "xSn"xTe and with the drop in the microinclusions enriched with metal components of Pb"1" "-" "xSn"xTe or metal impurities. The resulting thermodiffusion of the metallic atoms to the electrically active vacancies of Pb(Sn) in the Pb"1" "-" "xSn"xTe lattice explains the reduction of hole concentration and gain in mobility.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sizov, F.F.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Plyatsko, S.V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Darchuk, S.D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Infrared Physics</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">27(1987), 4, Seite 249-252</subfield><subfield code="w">(DE-627)NLEJ17762003X</subfield><subfield code="w">(DE-600)2139338-2</subfield><subfield code="x">0020-0891</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:27</subfield><subfield code="g">year:1987</subfield><subfield code="g">number:4</subfield><subfield code="g">pages:249-252</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0020-0891(87)90060-1</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">27</subfield><subfield code="j">1987</subfield><subfield code="e">4</subfield><subfield code="h">249-252</subfield></datafield></record></collection>
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