Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers
Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si&...
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Solid State Electronics - Amsterdam : Elsevier, 36(1993), 12, Seite 1763-1771 |
| Übergeordnetes Werk: |
volume:36 ; year:1993 ; number:12 ; pages:1763-1771 |
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| 245 | 1 | 0 | |a Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers |
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| 520 | |a Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. | ||
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| 700 | 1 | |a Jain, S.C. |4 oth | |
| 700 | 1 | |a Totterdell, D.H.J. |4 oth | |
| 700 | 1 | |a Caymax, M. |4 oth | |
| 700 | 1 | |a Nijs, J.F. |4 oth | |
| 700 | 1 | |a Mertens, R.P. |4 oth | |
| 700 | 1 | |a Van Overstraeten, R. |4 oth | |
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(DE-627)NLEJ179533916 (DE-599)GBVNLZ179533916 DE-627 ger DE-627 rakwb eng Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Poortmans, J. oth Jain, S.C. oth Totterdell, D.H.J. oth Caymax, M. oth Nijs, J.F. oth Mertens, R.P. oth Van Overstraeten, R. oth in Solid State Electronics Amsterdam : Elsevier 36(1993), 12, Seite 1763-1771 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:36 year:1993 number:12 pages:1763-1771 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(93)90224-E GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 36 1993 12 1763-1771 |
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(DE-627)NLEJ179533916 (DE-599)GBVNLZ179533916 DE-627 ger DE-627 rakwb eng Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Poortmans, J. oth Jain, S.C. oth Totterdell, D.H.J. oth Caymax, M. oth Nijs, J.F. oth Mertens, R.P. oth Van Overstraeten, R. oth in Solid State Electronics Amsterdam : Elsevier 36(1993), 12, Seite 1763-1771 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:36 year:1993 number:12 pages:1763-1771 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(93)90224-E GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 36 1993 12 1763-1771 |
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(DE-627)NLEJ179533916 (DE-599)GBVNLZ179533916 DE-627 ger DE-627 rakwb eng Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Poortmans, J. oth Jain, S.C. oth Totterdell, D.H.J. oth Caymax, M. oth Nijs, J.F. oth Mertens, R.P. oth Van Overstraeten, R. oth in Solid State Electronics Amsterdam : Elsevier 36(1993), 12, Seite 1763-1771 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:36 year:1993 number:12 pages:1763-1771 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(93)90224-E GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 36 1993 12 1763-1771 |
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(DE-627)NLEJ179533916 (DE-599)GBVNLZ179533916 DE-627 ger DE-627 rakwb eng Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Poortmans, J. oth Jain, S.C. oth Totterdell, D.H.J. oth Caymax, M. oth Nijs, J.F. oth Mertens, R.P. oth Van Overstraeten, R. oth in Solid State Electronics Amsterdam : Elsevier 36(1993), 12, Seite 1763-1771 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:36 year:1993 number:12 pages:1763-1771 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(93)90224-E GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 36 1993 12 1763-1771 |
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(DE-627)NLEJ179533916 (DE-599)GBVNLZ179533916 DE-627 ger DE-627 rakwb eng Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Poortmans, J. oth Jain, S.C. oth Totterdell, D.H.J. oth Caymax, M. oth Nijs, J.F. oth Mertens, R.P. oth Van Overstraeten, R. oth in Solid State Electronics Amsterdam : Elsevier 36(1993), 12, Seite 1763-1771 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:36 year:1993 number:12 pages:1763-1771 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(93)90224-E GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 36 1993 12 1763-1771 |
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theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type si and strained si"1"-"xge"x layers |
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Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers |
| abstract |
Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. |
| abstractGer |
Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. |
| abstract_unstemmed |
Based on an analytical approach developed by Jain and Roulston, the different contributions to the bandgap narrowing at T = 0 K due to heavy doping in highly p-type doped Si and strained Si"1"-"xGe"x-layers are calculated for x < 0.3. The valence band in Si and in strained Si"1"-"xGe"x layers is not parabolic, it is highly distorted. To take the non-parabolicity into account a dopant concentration-dependent density of states effective mass is defined. within the framework of this formalism we find that the bandgap narrowing (BGN) in Si is not appreciably affected due to the band distortion. The situation for strained Si"1"-"xGe"x layers is quite different, in that the BGN increases significantly at doping levels exceeding 10^1^9 cm^-^3. In the earlier published work, BGN of the Si"1"-"xGe"x layers was either slightly smaller or about the same as in Si. Now at high doping levels, BGN becomes considerably higher than in Si. We will show that the effect of the strain on the Fermi energy is much larger than on the BGN, which will cause a large change in the effective valence band offset. Comparison will be made then between our theoretical calculations and experimental results obtained on two different device structures. The modified effective valence band offset that we have calculated is in very good agreement with the experimental value derived from the published work on long-wavelength optical detectors. The apparent bandgap narrowing in strained p-type Si"1"-"xGe"x-layers is also calculated and compared with the experimental results on Heterojunction Bipolar Transistors fabricated in our laboratory. |
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Theoretical calculation and experimental evidence of the real and apparent bandgap narrowing due to heavy doping in p-type Si and strained Si"1"-"xGe"x layers |
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Poortmans, J. Jain, S.C. Totterdell, D.H.J. Caymax, M. Nijs, J.F. Mertens, R.P. Van Overstraeten, R. |
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Poortmans, J. Jain, S.C. Totterdell, D.H.J. Caymax, M. Nijs, J.F. Mertens, R.P. Van Overstraeten, R. |
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