Au/Be ohmic contacts to p-type indium phosphide
The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1982 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Solid State Electronics - Amsterdam : Elsevier, 25(1982), 10, Seite 973-977 |
| Übergeordnetes Werk: |
volume:25 ; year:1982 ; number:10 ; pages:973-977 |
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| 520 | |a The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. | ||
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(DE-627)NLEJ179699725 (DE-599)GBVNLZ179699725 DE-627 ger DE-627 rakwb eng Au/Be ohmic contacts to p-type indium phosphide 1982 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Valois, A.J. oth Robinson, G.Y. oth in Solid State Electronics Amsterdam : Elsevier 25(1982), 10, Seite 973-977 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:25 year:1982 number:10 pages:973-977 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(82)90018-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 25 1982 10 973-977 |
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(DE-627)NLEJ179699725 (DE-599)GBVNLZ179699725 DE-627 ger DE-627 rakwb eng Au/Be ohmic contacts to p-type indium phosphide 1982 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Valois, A.J. oth Robinson, G.Y. oth in Solid State Electronics Amsterdam : Elsevier 25(1982), 10, Seite 973-977 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:25 year:1982 number:10 pages:973-977 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(82)90018-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 25 1982 10 973-977 |
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(DE-627)NLEJ179699725 (DE-599)GBVNLZ179699725 DE-627 ger DE-627 rakwb eng Au/Be ohmic contacts to p-type indium phosphide 1982 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Valois, A.J. oth Robinson, G.Y. oth in Solid State Electronics Amsterdam : Elsevier 25(1982), 10, Seite 973-977 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:25 year:1982 number:10 pages:973-977 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(82)90018-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 25 1982 10 973-977 |
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(DE-627)NLEJ179699725 (DE-599)GBVNLZ179699725 DE-627 ger DE-627 rakwb eng Au/Be ohmic contacts to p-type indium phosphide 1982 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Valois, A.J. oth Robinson, G.Y. oth in Solid State Electronics Amsterdam : Elsevier 25(1982), 10, Seite 973-977 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:25 year:1982 number:10 pages:973-977 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(82)90018-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 25 1982 10 973-977 |
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(DE-627)NLEJ179699725 (DE-599)GBVNLZ179699725 DE-627 ger DE-627 rakwb eng Au/Be ohmic contacts to p-type indium phosphide 1982 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Valois, A.J. oth Robinson, G.Y. oth in Solid State Electronics Amsterdam : Elsevier 25(1982), 10, Seite 973-977 (DE-627)NLEJ178958514 (DE-600)2012825-3 0038-1101 nnns volume:25 year:1982 number:10 pages:973-977 http://linkinghub.elsevier.com/retrieve/pii/0038-1101(82)90018-1 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 25 1982 10 973-977 |
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au/be ohmic contacts to p-type indium phosphide |
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The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. |
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The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. |
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The use of evaporated layers of Au and Be for alloyed ohmic contacts to p-type InP with 10^1^7-10^1^8 cm^-^3 doping has been examined. It was found that the Au/Be ratio influences the optimum heat-treatment time and temperature but not the value of the specific contact resistance. The minimum value of the contact resistance for the Au/Be contact, as well as other Au-based alloy contacts to p-type InP, was found to be inversely proportional to substrate doping. A possible explanation for this result is the formation of small, localized p^+ regions during the Au/InP alloying process. |
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