Irradiation-induced compensation of n-type germanium: An optical study of vibrational absorption
n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the int...
Ausführliche Beschreibung
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1975 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Solid State Communications - Amsterdam : Elsevier, 17(1975), 12, Seite 1603-1607 |
| Übergeordnetes Werk: |
volume:17 ; year:1975 ; number:12 ; pages:1603-1607 |
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NLEJ179714384 |
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| 520 | |a n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. | ||
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| 700 | 1 | |a Totterdell, D.H.J. |4 oth | |
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(DE-627)NLEJ179714384 (DE-599)GBVNLZ179714384 DE-627 ger DE-627 rakwb eng Irradiation-induced compensation of n-type germanium: An optical study of vibrational absorption 1975 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Brozel, M.R. oth Laithwaite, K. oth Newman, R.C. oth Totterdell, D.H.J. oth in Solid State Communications Amsterdam : Elsevier 17(1975), 12, Seite 1603-1607 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:17 year:1975 number:12 pages:1603-1607 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(75)91005-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 17 1975 12 1603-1607 |
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(DE-627)NLEJ179714384 (DE-599)GBVNLZ179714384 DE-627 ger DE-627 rakwb eng Irradiation-induced compensation of n-type germanium: An optical study of vibrational absorption 1975 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Brozel, M.R. oth Laithwaite, K. oth Newman, R.C. oth Totterdell, D.H.J. oth in Solid State Communications Amsterdam : Elsevier 17(1975), 12, Seite 1603-1607 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:17 year:1975 number:12 pages:1603-1607 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(75)91005-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 17 1975 12 1603-1607 |
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(DE-627)NLEJ179714384 (DE-599)GBVNLZ179714384 DE-627 ger DE-627 rakwb eng Irradiation-induced compensation of n-type germanium: An optical study of vibrational absorption 1975 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Brozel, M.R. oth Laithwaite, K. oth Newman, R.C. oth Totterdell, D.H.J. oth in Solid State Communications Amsterdam : Elsevier 17(1975), 12, Seite 1603-1607 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:17 year:1975 number:12 pages:1603-1607 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(75)91005-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 17 1975 12 1603-1607 |
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(DE-627)NLEJ179714384 (DE-599)GBVNLZ179714384 DE-627 ger DE-627 rakwb eng Irradiation-induced compensation of n-type germanium: An optical study of vibrational absorption 1975 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Brozel, M.R. oth Laithwaite, K. oth Newman, R.C. oth Totterdell, D.H.J. oth in Solid State Communications Amsterdam : Elsevier 17(1975), 12, Seite 1603-1607 (DE-627)NLEJ176858040 (DE-600)1467698-9 0038-1098 nnns volume:17 year:1975 number:12 pages:1603-1607 http://linkinghub.elsevier.com/retrieve/pii/0038-1098(75)91005-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 17 1975 12 1603-1607 |
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irradiation-induced compensation of n-type germanium: an optical study of vibrational absorption |
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Irradiation-induced compensation of n-type germanium: An optical study of vibrational absorption |
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n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. |
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n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. |
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n-type germanium crystals doped with As, Sb, P, P + In, P + Ga or As + B have been rendered transparent by high energy e^- or n^0 irradiation. Localized vibrations of P, [P-In], [P-Ga], B and [B-As] have been observed. It is concluded that the compensation process must occur predominantly by the introduction of defects which act as acceptors and which do not involve the shallow donor impurity atom. |
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