Stimulated recombination from the defect level in doped lead telluride
The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexc...
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Infrared Physics - Amsterdam : Elsevier, 34(1993), 6, Seite 655-659 |
| Übergeordnetes Werk: |
volume:34 ; year:1993 ; number:6 ; pages:655-659 |
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| 520 | |a The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. | ||
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(DE-627)NLEJ179922106 (DE-599)GBVNLZ179922106 DE-627 ger DE-627 rakwb eng Stimulated recombination from the defect level in doped lead telluride 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Darchuk, S.D. oth Sizov, F.F. oth Korovina, L.A. oth in Infrared Physics Amsterdam : Elsevier 34(1993), 6, Seite 655-659 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:34 year:1993 number:6 pages:655-659 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(93)90125-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 34 1993 6 655-659 |
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(DE-627)NLEJ179922106 (DE-599)GBVNLZ179922106 DE-627 ger DE-627 rakwb eng Stimulated recombination from the defect level in doped lead telluride 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Darchuk, S.D. oth Sizov, F.F. oth Korovina, L.A. oth in Infrared Physics Amsterdam : Elsevier 34(1993), 6, Seite 655-659 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:34 year:1993 number:6 pages:655-659 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(93)90125-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 34 1993 6 655-659 |
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(DE-627)NLEJ179922106 (DE-599)GBVNLZ179922106 DE-627 ger DE-627 rakwb eng Stimulated recombination from the defect level in doped lead telluride 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Darchuk, S.D. oth Sizov, F.F. oth Korovina, L.A. oth in Infrared Physics Amsterdam : Elsevier 34(1993), 6, Seite 655-659 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:34 year:1993 number:6 pages:655-659 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(93)90125-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 34 1993 6 655-659 |
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(DE-627)NLEJ179922106 (DE-599)GBVNLZ179922106 DE-627 ger DE-627 rakwb eng Stimulated recombination from the defect level in doped lead telluride 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Darchuk, S.D. oth Sizov, F.F. oth Korovina, L.A. oth in Infrared Physics Amsterdam : Elsevier 34(1993), 6, Seite 655-659 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:34 year:1993 number:6 pages:655-659 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(93)90125-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 34 1993 6 655-659 |
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(DE-627)NLEJ179922106 (DE-599)GBVNLZ179922106 DE-627 ger DE-627 rakwb eng Stimulated recombination from the defect level in doped lead telluride 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Darchuk, S.D. oth Sizov, F.F. oth Korovina, L.A. oth in Infrared Physics Amsterdam : Elsevier 34(1993), 6, Seite 655-659 (DE-627)NLEJ17762003X (DE-600)2139338-2 0020-0891 nnns volume:34 year:1993 number:6 pages:655-659 http://linkinghub.elsevier.com/retrieve/pii/0020-0891(93)90125-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 34 1993 6 655-659 |
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stimulated recombination from the defect level in doped lead telluride |
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Stimulated recombination from the defect level in doped lead telluride |
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The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. |
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The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. |
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The relaxation processes of the photoexcited carriers from the defect level in the band gap to the valence band states were investigated in Na and Tl doped p-type PbTe single crystals at T = 77 K. The observed photosignal oscillations were proved to be induced by stimulated recombination of photoexcited carriers from the defect level E"d ~ 50 meV above the top of the valence band. Non-equilibrium carrier inversion population was produced by impulses of a TEA CO"2-laser. The observed stimulated recombination may presumably be used for designing IR semiconductor lasers operating in the wavelength range of λ ~ 25 μm at T = 77 K. |
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