Radiation damage in detector-amplifier structures capable of signal storage
Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required fo...
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| Autor*in: |
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| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
|---|---|
| Übergeordnetes Werk: |
in: Nuclear Instruments and Methods in Physics Research Section A: - Amsterdam : Elsevier, 326(1993), 1-2, Seite 386-389 |
| Übergeordnetes Werk: |
volume:326 ; year:1993 ; number:1-2 ; pages:386-389 |
| Links: |
|---|
| Katalog-ID: |
NLEJ180875760 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLEJ180875760 | ||
| 003 | DE-627 | ||
| 005 | 20210706140232.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 070505s1993 xx |||||o 00| ||eng c | ||
| 035 | |a (DE-627)NLEJ180875760 | ||
| 035 | |a (DE-599)GBVNLZ180875760 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Radiation damage in detector-amplifier structures capable of signal storage |
| 264 | 1 | |c 1993 | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. | ||
| 533 | |f Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 | ||
| 700 | 1 | |a Beha, T. |4 oth | |
| 700 | 1 | |a Dunnweber, W. |4 oth | |
| 700 | 1 | |a Klein, P. |4 oth | |
| 773 | 0 | 8 | |i in |t Nuclear Instruments and Methods in Physics Research Section A: |d Amsterdam : Elsevier |g 326(1993), 1-2, Seite 386-389 |w (DE-627)NLEJ180854372 |w (DE-600)1466532-3 |x 0168-9002 |7 nnns |
| 773 | 1 | 8 | |g volume:326 |g year:1993 |g number:1-2 |g pages:386-389 |
| 856 | 4 | 0 | |u http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q |
| 912 | |a GBV_USEFLAG_H | ||
| 912 | |a ZDB-1-SDJ | ||
| 912 | |a GBV_NL_ARTICLE | ||
| 951 | |a AR | ||
| 952 | |d 326 |j 1993 |e 1-2 |h 386-389 | ||
| matchkey_str |
article:01689002:1993----::aitodmgidtcoapiirtutrsaa |
|---|---|
| hierarchy_sort_str |
1993 |
| publishDate |
1993 |
| allfields |
(DE-627)NLEJ180875760 (DE-599)GBVNLZ180875760 DE-627 ger DE-627 rakwb eng Radiation damage in detector-amplifier structures capable of signal storage 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Beha, T. oth Dunnweber, W. oth Klein, P. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 326(1993), 1-2, Seite 386-389 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:326 year:1993 number:1-2 pages:386-389 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 326 1993 1-2 386-389 |
| spelling |
(DE-627)NLEJ180875760 (DE-599)GBVNLZ180875760 DE-627 ger DE-627 rakwb eng Radiation damage in detector-amplifier structures capable of signal storage 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Beha, T. oth Dunnweber, W. oth Klein, P. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 326(1993), 1-2, Seite 386-389 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:326 year:1993 number:1-2 pages:386-389 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 326 1993 1-2 386-389 |
| allfields_unstemmed |
(DE-627)NLEJ180875760 (DE-599)GBVNLZ180875760 DE-627 ger DE-627 rakwb eng Radiation damage in detector-amplifier structures capable of signal storage 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Beha, T. oth Dunnweber, W. oth Klein, P. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 326(1993), 1-2, Seite 386-389 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:326 year:1993 number:1-2 pages:386-389 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 326 1993 1-2 386-389 |
| allfieldsGer |
(DE-627)NLEJ180875760 (DE-599)GBVNLZ180875760 DE-627 ger DE-627 rakwb eng Radiation damage in detector-amplifier structures capable of signal storage 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Beha, T. oth Dunnweber, W. oth Klein, P. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 326(1993), 1-2, Seite 386-389 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:326 year:1993 number:1-2 pages:386-389 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 326 1993 1-2 386-389 |
| allfieldsSound |
(DE-627)NLEJ180875760 (DE-599)GBVNLZ180875760 DE-627 ger DE-627 rakwb eng Radiation damage in detector-amplifier structures capable of signal storage 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Beha, T. oth Dunnweber, W. oth Klein, P. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 326(1993), 1-2, Seite 386-389 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:326 year:1993 number:1-2 pages:386-389 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 326 1993 1-2 386-389 |
| language |
English |
| source |
in Nuclear Instruments and Methods in Physics Research Section A: 326(1993), 1-2, Seite 386-389 volume:326 year:1993 number:1-2 pages:386-389 |
| sourceStr |
in Nuclear Instruments and Methods in Physics Research Section A: 326(1993), 1-2, Seite 386-389 volume:326 year:1993 number:1-2 pages:386-389 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| isfreeaccess_bool |
false |
| container_title |
Nuclear Instruments and Methods in Physics Research Section A: |
| authorswithroles_txt_mv |
Beha, T. @@oth@@ Dunnweber, W. @@oth@@ Klein, P. @@oth@@ |
| publishDateDaySort_date |
1993-01-01T00:00:00Z |
| hierarchy_top_id |
NLEJ180854372 |
| id |
NLEJ180875760 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ180875760</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706140232.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ180875760</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ180875760</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Radiation damage in detector-amplifier structures capable of signal storage</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Beha, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dunnweber, W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Klein, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Nuclear Instruments and Methods in Physics Research Section A:</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">326(1993), 1-2, Seite 386-389</subfield><subfield code="w">(DE-627)NLEJ180854372</subfield><subfield code="w">(DE-600)1466532-3</subfield><subfield code="x">0168-9002</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:326</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1-2</subfield><subfield code="g">pages:386-389</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">326</subfield><subfield code="j">1993</subfield><subfield code="e">1-2</subfield><subfield code="h">386-389</subfield></datafield></record></collection>
|
| series2 |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)NLEJ180854372 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| collection |
NL |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
0168-9002 |
| topic_title |
Radiation damage in detector-amplifier structures capable of signal storage |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
t b tb w d wd p k pk |
| hierarchy_parent_title |
Nuclear Instruments and Methods in Physics Research Section A: |
| hierarchy_parent_id |
NLEJ180854372 |
| hierarchy_top_title |
Nuclear Instruments and Methods in Physics Research Section A: |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)NLEJ180854372 (DE-600)1466532-3 |
| title |
Radiation damage in detector-amplifier structures capable of signal storage |
| spellingShingle |
Radiation damage in detector-amplifier structures capable of signal storage |
| ctrlnum |
(DE-627)NLEJ180875760 (DE-599)GBVNLZ180875760 |
| title_full |
Radiation damage in detector-amplifier structures capable of signal storage |
| journal |
Nuclear Instruments and Methods in Physics Research Section A: |
| journalStr |
Nuclear Instruments and Methods in Physics Research Section A: |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1993 |
| contenttype_str_mv |
zzz |
| container_start_page |
386 |
| container_volume |
326 |
| format_se |
Elektronische Aufsätze |
| title_sort |
radiation damage in detector-amplifier structures capable of signal storage |
| title_auth |
Radiation damage in detector-amplifier structures capable of signal storage |
| abstract |
Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. |
| abstractGer |
Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. |
| abstract_unstemmed |
Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K. |
| collection_details |
GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE |
| container_issue |
1-2 |
| title_short |
Radiation damage in detector-amplifier structures capable of signal storage |
| url |
http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q |
| remote_bool |
true |
| author2 |
Beha, T. Dunnweber, W. Klein, P. |
| author2Str |
Beha, T. Dunnweber, W. Klein, P. |
| ppnlink |
NLEJ180854372 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth |
| up_date |
2024-07-06T04:46:28.915Z |
| _version_ |
1803803624906686464 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ180875760</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706140232.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ180875760</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ180875760</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Radiation damage in detector-amplifier structures capable of signal storage</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Detectors with integrated amplification and memory (DEPMOS counters) were irradiated by 10 MeV protons with doses up to 8 kGy. While the device remains fully operational, radiation damage is found to reduce the period τ for thermal filling-up of the internal storage gate, i.e. the period required for reset, and to shift the transmission characteristics of the MOS transistor component. The exponential temperature dependence of τ enables extensions to several min (s) before (after) irradiation by cooling to 220 K.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Beha, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Dunnweber, W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Klein, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Nuclear Instruments and Methods in Physics Research Section A:</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">326(1993), 1-2, Seite 386-389</subfield><subfield code="w">(DE-627)NLEJ180854372</subfield><subfield code="w">(DE-600)1466532-3</subfield><subfield code="x">0168-9002</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:326</subfield><subfield code="g">year:1993</subfield><subfield code="g">number:1-2</subfield><subfield code="g">pages:386-389</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0168-9002(93)90381-Q</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">326</subfield><subfield code="j">1993</subfield><subfield code="e">1-2</subfield><subfield code="h">386-389</subfield></datafield></record></collection>
|
| score |
7.4014015 |