Semiconductor microstrip detector with a resistive layer
A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepl...
Ausführliche Beschreibung
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1990 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Nuclear Instruments and Methods in Physics Research Section A: - Amsterdam : Elsevier, 288(1990), 2-3, Seite 375-378 |
| Übergeordnetes Werk: |
volume:288 ; year:1990 ; number:2-3 ; pages:375-378 |
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NLEJ18088803X |
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| 245 | 1 | 0 | |a Semiconductor microstrip detector with a resistive layer |
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| 520 | |a A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. | ||
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| 700 | 1 | |a Barabash, L.S. |4 oth | |
| 700 | 1 | |a Belcarz, E. |4 oth | |
| 700 | 1 | |a Gurov, Y.B. |4 oth | |
| 700 | 1 | |a Maltsev, E.I. |4 oth | |
| 700 | 1 | |a Meszaros, L.P. |4 oth | |
| 700 | 1 | |a Petukhov, Y.P. |4 oth | |
| 700 | 1 | |a Pimenov, A.G. |4 oth | |
| 700 | 1 | |a Sandukovsky, V.G. |4 oth | |
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(DE-627)NLEJ18088803X (DE-599)GBVNLZ18088803X DE-627 ger DE-627 rakwb eng Semiconductor microstrip detector with a resistive layer 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Barabash, L.S. oth Belcarz, E. oth Gurov, Y.B. oth Maltsev, E.I. oth Meszaros, L.P. oth Petukhov, Y.P. oth Pimenov, A.G. oth Sandukovsky, V.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 288(1990), 2-3, Seite 375-378 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:288 year:1990 number:2-3 pages:375-378 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(90)90127-R GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 288 1990 2-3 375-378 |
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(DE-627)NLEJ18088803X (DE-599)GBVNLZ18088803X DE-627 ger DE-627 rakwb eng Semiconductor microstrip detector with a resistive layer 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Barabash, L.S. oth Belcarz, E. oth Gurov, Y.B. oth Maltsev, E.I. oth Meszaros, L.P. oth Petukhov, Y.P. oth Pimenov, A.G. oth Sandukovsky, V.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 288(1990), 2-3, Seite 375-378 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:288 year:1990 number:2-3 pages:375-378 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(90)90127-R GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 288 1990 2-3 375-378 |
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(DE-627)NLEJ18088803X (DE-599)GBVNLZ18088803X DE-627 ger DE-627 rakwb eng Semiconductor microstrip detector with a resistive layer 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Barabash, L.S. oth Belcarz, E. oth Gurov, Y.B. oth Maltsev, E.I. oth Meszaros, L.P. oth Petukhov, Y.P. oth Pimenov, A.G. oth Sandukovsky, V.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 288(1990), 2-3, Seite 375-378 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:288 year:1990 number:2-3 pages:375-378 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(90)90127-R GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 288 1990 2-3 375-378 |
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(DE-627)NLEJ18088803X (DE-599)GBVNLZ18088803X DE-627 ger DE-627 rakwb eng Semiconductor microstrip detector with a resistive layer 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Barabash, L.S. oth Belcarz, E. oth Gurov, Y.B. oth Maltsev, E.I. oth Meszaros, L.P. oth Petukhov, Y.P. oth Pimenov, A.G. oth Sandukovsky, V.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 288(1990), 2-3, Seite 375-378 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:288 year:1990 number:2-3 pages:375-378 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(90)90127-R GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 288 1990 2-3 375-378 |
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(DE-627)NLEJ18088803X (DE-599)GBVNLZ18088803X DE-627 ger DE-627 rakwb eng Semiconductor microstrip detector with a resistive layer 1990 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Barabash, L.S. oth Belcarz, E. oth Gurov, Y.B. oth Maltsev, E.I. oth Meszaros, L.P. oth Petukhov, Y.P. oth Pimenov, A.G. oth Sandukovsky, V.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 288(1990), 2-3, Seite 375-378 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:288 year:1990 number:2-3 pages:375-378 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(90)90127-R GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 288 1990 2-3 375-378 |
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Barabash, L.S. @@oth@@ Belcarz, E. @@oth@@ Gurov, Y.B. @@oth@@ Maltsev, E.I. @@oth@@ Meszaros, L.P. @@oth@@ Petukhov, Y.P. @@oth@@ Pimenov, A.G. @@oth@@ Sandukovsky, V.G. @@oth@@ |
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Semiconductor microstrip detector with a resistive layer |
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A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. |
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A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. |
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A silicon one-coordinate detector made on the basis of a continuous position-sensitive counter and an external system of readout strips is described. The resistive layer of the detector, which is necessary for obtaining the charge distribution from the incident particles, was formed by a thin undepleted region of the detector. The active area of the detector was 21 x 5 mm^2 and its thickness was 812 μm. The possibility to obtain a position precision (using centroid finding of the charge) of σ ~ 25 μm for a strip pitch of 0.5 mm is shown. |
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7.40176 |