The AMchip: a VLSI associative memory for track finding
An associative memory to be used for super-fast track finding in future high energy physics experiments, has been implemented on silicon as a full-custom CMOS VLSI chip (the AMchip). The first prototype has been designed and successfully tested at INFN in Pisa. It is implemented in 1.6 μm, double me...
Ausführliche Beschreibung
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E-Artikel |
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Englisch |
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1992 |
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Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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Übergeordnetes Werk: |
in: Nuclear Instruments and Methods in Physics Research Section A: - Amsterdam : Elsevier, 315(1992), 1-3, Seite 446-448 |
Übergeordnetes Werk: |
volume:315 ; year:1992 ; number:1-3 ; pages:446-448 |
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(DE-627)NLEJ180901125 (DE-599)GBVNLZ180901125 DE-627 ger DE-627 rakwb eng The AMchip: a VLSI associative memory for track finding 1992 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An associative memory to be used for super-fast track finding in future high energy physics experiments, has been implemented on silicon as a full-custom CMOS VLSI chip (the AMchip). The first prototype has been designed and successfully tested at INFN in Pisa. It is implemented in 1.6 μm, double metal, silicon gate CMOS technology and contains about 140 000 MOS transistors on a 1 x 1 cm^2 silicon chip. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Amendolia, S.R. oth Galeotti, S. oth Morsani, F. oth Passuello, D. oth Ristori, L. oth Turini, N. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 315(1992), 1-3, Seite 446-448 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:315 year:1992 number:1-3 pages:446-448 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(92)90744-O GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 315 1992 1-3 446-448 |
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(DE-627)NLEJ180901125 (DE-599)GBVNLZ180901125 DE-627 ger DE-627 rakwb eng The AMchip: a VLSI associative memory for track finding 1992 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An associative memory to be used for super-fast track finding in future high energy physics experiments, has been implemented on silicon as a full-custom CMOS VLSI chip (the AMchip). The first prototype has been designed and successfully tested at INFN in Pisa. It is implemented in 1.6 μm, double metal, silicon gate CMOS technology and contains about 140 000 MOS transistors on a 1 x 1 cm^2 silicon chip. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Amendolia, S.R. oth Galeotti, S. oth Morsani, F. oth Passuello, D. oth Ristori, L. oth Turini, N. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 315(1992), 1-3, Seite 446-448 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:315 year:1992 number:1-3 pages:446-448 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(92)90744-O GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 315 1992 1-3 446-448 |
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An associative memory to be used for super-fast track finding in future high energy physics experiments, has been implemented on silicon as a full-custom CMOS VLSI chip (the AMchip). The first prototype has been designed and successfully tested at INFN in Pisa. It is implemented in 1.6 μm, double metal, silicon gate CMOS technology and contains about 140 000 MOS transistors on a 1 x 1 cm^2 silicon chip. |
abstractGer |
An associative memory to be used for super-fast track finding in future high energy physics experiments, has been implemented on silicon as a full-custom CMOS VLSI chip (the AMchip). The first prototype has been designed and successfully tested at INFN in Pisa. It is implemented in 1.6 μm, double metal, silicon gate CMOS technology and contains about 140 000 MOS transistors on a 1 x 1 cm^2 silicon chip. |
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An associative memory to be used for super-fast track finding in future high energy physics experiments, has been implemented on silicon as a full-custom CMOS VLSI chip (the AMchip). The first prototype has been designed and successfully tested at INFN in Pisa. It is implemented in 1.6 μm, double metal, silicon gate CMOS technology and contains about 140 000 MOS transistors on a 1 x 1 cm^2 silicon chip. |
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