Charge-carrier collection by superconducting transition-edge sensors deposited on silicon
Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons an...
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Nuclear Instruments and Methods in Physics Research Section A: - Amsterdam : Elsevier, 333(1993), 2-3, Seite 464-468 |
| Übergeordnetes Werk: |
volume:333 ; year:1993 ; number:2-3 ; pages:464-468 |
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| 520 | |a Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. | ||
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| 700 | 1 | |a Penn, M.J. |4 oth | |
| 700 | 1 | |a Young, B.A. |4 oth | |
| 700 | 1 | |a Pronko, J.G. |4 oth | |
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(DE-627)NLEJ180922432 (DE-599)GBVNLZ180922432 DE-627 ger DE-627 rakwb eng Charge-carrier collection by superconducting transition-edge sensors deposited on silicon 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Dougherty, B.L. oth Cabrera, B. oth Lee, A.T. oth Penn, M.J. oth Young, B.A. oth Pronko, J.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 333(1993), 2-3, Seite 464-468 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:333 year:1993 number:2-3 pages:464-468 http://dx.doi.org/10.1016/0168-9002(93)91193-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 333 1993 2-3 464-468 |
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(DE-627)NLEJ180922432 (DE-599)GBVNLZ180922432 DE-627 ger DE-627 rakwb eng Charge-carrier collection by superconducting transition-edge sensors deposited on silicon 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Dougherty, B.L. oth Cabrera, B. oth Lee, A.T. oth Penn, M.J. oth Young, B.A. oth Pronko, J.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 333(1993), 2-3, Seite 464-468 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:333 year:1993 number:2-3 pages:464-468 http://dx.doi.org/10.1016/0168-9002(93)91193-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 333 1993 2-3 464-468 |
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(DE-627)NLEJ180922432 (DE-599)GBVNLZ180922432 DE-627 ger DE-627 rakwb eng Charge-carrier collection by superconducting transition-edge sensors deposited on silicon 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Dougherty, B.L. oth Cabrera, B. oth Lee, A.T. oth Penn, M.J. oth Young, B.A. oth Pronko, J.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 333(1993), 2-3, Seite 464-468 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:333 year:1993 number:2-3 pages:464-468 http://dx.doi.org/10.1016/0168-9002(93)91193-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 333 1993 2-3 464-468 |
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(DE-627)NLEJ180922432 (DE-599)GBVNLZ180922432 DE-627 ger DE-627 rakwb eng Charge-carrier collection by superconducting transition-edge sensors deposited on silicon 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Dougherty, B.L. oth Cabrera, B. oth Lee, A.T. oth Penn, M.J. oth Young, B.A. oth Pronko, J.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 333(1993), 2-3, Seite 464-468 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:333 year:1993 number:2-3 pages:464-468 http://dx.doi.org/10.1016/0168-9002(93)91193-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 333 1993 2-3 464-468 |
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(DE-627)NLEJ180922432 (DE-599)GBVNLZ180922432 DE-627 ger DE-627 rakwb eng Charge-carrier collection by superconducting transition-edge sensors deposited on silicon 1993 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Dougherty, B.L. oth Cabrera, B. oth Lee, A.T. oth Penn, M.J. oth Young, B.A. oth Pronko, J.G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 333(1993), 2-3, Seite 464-468 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:333 year:1993 number:2-3 pages:464-468 http://dx.doi.org/10.1016/0168-9002(93)91193-Q GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 333 1993 2-3 464-468 |
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charge-carrier collection by superconducting transition-edge sensors deposited on silicon |
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Charge-carrier collection by superconducting transition-edge sensors deposited on silicon |
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Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. |
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Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. |
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Superconducting transition-edge sensors deposited on high-purity silicon have been found to operate in two distinct ''modes'', distinguished by different intrinsic gains. We propose that this gain-shift is due to a change in the prompt collection of energy carried by electrons and holes. |
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