Recent developments in semiconductor detectors and on-chip electronics
Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1989 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Nuclear Instruments and Methods in Physics Research Section A: - Amsterdam : Elsevier, 283(1989), 3, Seite 387-398 |
| Übergeordnetes Werk: |
volume:283 ; year:1989 ; number:3 ; pages:387-398 |
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| 520 | |a Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. | ||
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(DE-627)NLEJ18092799X (DE-599)GBVNLZ18092799X DE-627 ger DE-627 rakwb eng Recent developments in semiconductor detectors and on-chip electronics 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Struder, L. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 283(1989), 3, Seite 387-398 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:283 year:1989 number:3 pages:387-398 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(89)91390-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 283 1989 3 387-398 |
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(DE-627)NLEJ18092799X (DE-599)GBVNLZ18092799X DE-627 ger DE-627 rakwb eng Recent developments in semiconductor detectors and on-chip electronics 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Struder, L. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 283(1989), 3, Seite 387-398 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:283 year:1989 number:3 pages:387-398 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(89)91390-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 283 1989 3 387-398 |
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(DE-627)NLEJ18092799X (DE-599)GBVNLZ18092799X DE-627 ger DE-627 rakwb eng Recent developments in semiconductor detectors and on-chip electronics 1989 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Struder, L. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 283(1989), 3, Seite 387-398 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:283 year:1989 number:3 pages:387-398 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(89)91390-9 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 283 1989 3 387-398 |
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Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. |
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Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. |
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Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ18092799X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210706141040.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070505s1989 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ18092799X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)GBVNLZ18092799X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Recent developments in semiconductor detectors and on-chip electronics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1989</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Various new detector types have been derived from the silicon drift chamber (SDC) principle proposed by Gatti and Rehak in 1983: -|Large-area two-dimensional silicon drift chambers (4 x 4 cm^2) with an integrated voltage divider for position measurements of minimum ionizing particles in high-energy physics experiments.-|Low capacitive drift photodiodes and spiral drift chambers for energy measurements (detection of scintillation light, direct detection of X-rays and ionizing particles).-|Fully depleted pn CCDs for position and energy measurements of ionizing radiation. Focal-plane detectors of this type are foreseen for the X-ray multimirror (XMM) satellite experiment.-|JFETs, compatible with the detector process on high-resistivity silicon. The benefit of the low readout-anode capacitance can only be fully exploited if on-chip electronics with suitable amplifying devices are integrated in the silicon detector.-|A novel pixel detector with nondestructive readout of the signal charges and internal amplification. It is introduced with the help of device simulations and first test results.Finally - as the only non-SDC type device - a double-sided silicon strip detector with capacitive readout and a new method of integrated bias coupling is presented to be used as tracking detector for minimum ionizing particles in LEP experiments.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Elsevier Journal Backfiles on ScienceDirect 1907 - 2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Struder, L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Nuclear Instruments and Methods in Physics Research Section A:</subfield><subfield code="d">Amsterdam : Elsevier</subfield><subfield code="g">283(1989), 3, Seite 387-398</subfield><subfield code="w">(DE-627)NLEJ180854372</subfield><subfield code="w">(DE-600)1466532-3</subfield><subfield code="x">0168-9002</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:283</subfield><subfield code="g">year:1989</subfield><subfield code="g">number:3</subfield><subfield code="g">pages:387-398</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://linkinghub.elsevier.com/retrieve/pii/0168-9002(89)91390-9</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_H</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SDJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">283</subfield><subfield code="j">1989</subfield><subfield code="e">3</subfield><subfield code="h">387-398</subfield></datafield></record></collection>
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