Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors
An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model th...
Ausführliche Beschreibung
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1987 |
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| Reproduktion: |
Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 |
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| Übergeordnetes Werk: |
in: Nuclear Instruments and Methods in Physics Research Section A: - Amsterdam : Elsevier, 262(1987), 2-3, Seite 353-358 |
| Übergeordnetes Werk: |
volume:262 ; year:1987 ; number:2-3 ; pages:353-358 |
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| 520 | |a An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. | ||
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| 700 | 1 | |a Huxtable, G. |4 oth | |
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(DE-627)NLEJ180939858 (DE-599)GBVNLZ180939858 DE-627 ger DE-627 rakwb eng Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Yorkston, J. oth Shotter, A.C. oth Syme, D.B. oth Huxtable, G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 262(1987), 2-3, Seite 353-358 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:262 year:1987 number:2-3 pages:353-358 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(87)90873-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 262 1987 2-3 353-358 |
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(DE-627)NLEJ180939858 (DE-599)GBVNLZ180939858 DE-627 ger DE-627 rakwb eng Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Yorkston, J. oth Shotter, A.C. oth Syme, D.B. oth Huxtable, G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 262(1987), 2-3, Seite 353-358 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:262 year:1987 number:2-3 pages:353-358 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(87)90873-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 262 1987 2-3 353-358 |
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(DE-627)NLEJ180939858 (DE-599)GBVNLZ180939858 DE-627 ger DE-627 rakwb eng Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Yorkston, J. oth Shotter, A.C. oth Syme, D.B. oth Huxtable, G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 262(1987), 2-3, Seite 353-358 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:262 year:1987 number:2-3 pages:353-358 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(87)90873-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 262 1987 2-3 353-358 |
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(DE-627)NLEJ180939858 (DE-599)GBVNLZ180939858 DE-627 ger DE-627 rakwb eng Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Yorkston, J. oth Shotter, A.C. oth Syme, D.B. oth Huxtable, G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 262(1987), 2-3, Seite 353-358 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:262 year:1987 number:2-3 pages:353-358 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(87)90873-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 262 1987 2-3 353-358 |
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(DE-627)NLEJ180939858 (DE-599)GBVNLZ180939858 DE-627 ger DE-627 rakwb eng Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors 1987 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. Elsevier Journal Backfiles on ScienceDirect 1907 - 2002 Yorkston, J. oth Shotter, A.C. oth Syme, D.B. oth Huxtable, G. oth in Nuclear Instruments and Methods in Physics Research Section A: Amsterdam : Elsevier 262(1987), 2-3, Seite 353-358 (DE-627)NLEJ180854372 (DE-600)1466532-3 0168-9002 nnns volume:262 year:1987 number:2-3 pages:353-358 http://linkinghub.elsevier.com/retrieve/pii/0168-9002(87)90873-4 GBV_USEFLAG_H ZDB-1-SDJ GBV_NL_ARTICLE AR 262 1987 2-3 353-358 |
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interstrip surface effects in oxide passivated ion-implanted silicon strip detectors |
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Interstrip surface effects in oxide passivated ion-implanted silicon strip detectors |
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An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. |
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An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. |
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An investigation is reported into charge sharing effects for highly ionising particles penetrating the interstrip gap for ion-implanted silicon strip detectors. It is found that under certain conditions anomalous polarity pulses are induced on adjacent strips. This effect is analysed with a model that takes account of the surface charge trapped on the SiSiO"2 interface between the adjacent strips. |
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