Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x
Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity a...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1977 |
|---|
| Umfang: |
11 |
|---|
| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
|---|---|
| Übergeordnetes Werk: |
in: Journal of materials science - 1966, 12(1977) vom: Aug., Seite 1614-1624 |
| Übergeordnetes Werk: |
volume:12 ; year:1977 ; month:08 ; pages:1614-1624 ; extent:11 |
| Links: |
|---|
| Katalog-ID: |
NLEJ194541797 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLEJ194541797 | ||
| 003 | DE-627 | ||
| 005 | 20210707232230.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 070526s1977 xx |||||o 00| ||eng c | ||
| 035 | |a (DE-627)NLEJ194541797 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| 264 | 1 | |c 1977 | |
| 300 | |a 11 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. | ||
| 533 | |f Springer Online Journal Archives 1860-2002 | ||
| 700 | 1 | |a Kshirsagar, S. T. |4 oth | |
| 700 | 1 | |a Sinha, A. P. B. |4 oth | |
| 773 | 0 | 8 | |i in |t Journal of materials science |d 1966 |g 12(1977) vom: Aug., Seite 1614-1624 |w (DE-627)NLEJ188987134 |w (DE-600)2015305-3 |x 1573-4803 |7 nnns |
| 773 | 1 | 8 | |g volume:12 |g year:1977 |g month:08 |g pages:1614-1624 |g extent:11 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1007/BF00542812 |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a ZDB-1-SOJ | ||
| 912 | |a GBV_NL_ARTICLE | ||
| 951 | |a AR | ||
| 952 | |d 12 |j 1977 |c 8 |h 1614-1624 |g 11 | ||
| matchkey_str |
article:15734803:1977----::piaasrtoeetiacnutvtadpcrlepneesrmn |
|---|---|
| hierarchy_sort_str |
1977 |
| publishDate |
1977 |
| allfields |
(DE-627)NLEJ194541797 DE-627 ger DE-627 rakwb eng Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x 1977 11 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. Springer Online Journal Archives 1860-2002 Kshirsagar, S. T. oth Sinha, A. P. B. oth in Journal of materials science 1966 12(1977) vom: Aug., Seite 1614-1624 (DE-627)NLEJ188987134 (DE-600)2015305-3 1573-4803 nnns volume:12 year:1977 month:08 pages:1614-1624 extent:11 http://dx.doi.org/10.1007/BF00542812 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 12 1977 8 1614-1624 11 |
| spelling |
(DE-627)NLEJ194541797 DE-627 ger DE-627 rakwb eng Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x 1977 11 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. Springer Online Journal Archives 1860-2002 Kshirsagar, S. T. oth Sinha, A. P. B. oth in Journal of materials science 1966 12(1977) vom: Aug., Seite 1614-1624 (DE-627)NLEJ188987134 (DE-600)2015305-3 1573-4803 nnns volume:12 year:1977 month:08 pages:1614-1624 extent:11 http://dx.doi.org/10.1007/BF00542812 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 12 1977 8 1614-1624 11 |
| allfields_unstemmed |
(DE-627)NLEJ194541797 DE-627 ger DE-627 rakwb eng Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x 1977 11 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. Springer Online Journal Archives 1860-2002 Kshirsagar, S. T. oth Sinha, A. P. B. oth in Journal of materials science 1966 12(1977) vom: Aug., Seite 1614-1624 (DE-627)NLEJ188987134 (DE-600)2015305-3 1573-4803 nnns volume:12 year:1977 month:08 pages:1614-1624 extent:11 http://dx.doi.org/10.1007/BF00542812 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 12 1977 8 1614-1624 11 |
| allfieldsGer |
(DE-627)NLEJ194541797 DE-627 ger DE-627 rakwb eng Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x 1977 11 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. Springer Online Journal Archives 1860-2002 Kshirsagar, S. T. oth Sinha, A. P. B. oth in Journal of materials science 1966 12(1977) vom: Aug., Seite 1614-1624 (DE-627)NLEJ188987134 (DE-600)2015305-3 1573-4803 nnns volume:12 year:1977 month:08 pages:1614-1624 extent:11 http://dx.doi.org/10.1007/BF00542812 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 12 1977 8 1614-1624 11 |
| allfieldsSound |
(DE-627)NLEJ194541797 DE-627 ger DE-627 rakwb eng Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x 1977 11 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. Springer Online Journal Archives 1860-2002 Kshirsagar, S. T. oth Sinha, A. P. B. oth in Journal of materials science 1966 12(1977) vom: Aug., Seite 1614-1624 (DE-627)NLEJ188987134 (DE-600)2015305-3 1573-4803 nnns volume:12 year:1977 month:08 pages:1614-1624 extent:11 http://dx.doi.org/10.1007/BF00542812 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 12 1977 8 1614-1624 11 |
| language |
English |
| source |
in Journal of materials science 12(1977) vom: Aug., Seite 1614-1624 volume:12 year:1977 month:08 pages:1614-1624 extent:11 |
| sourceStr |
in Journal of materials science 12(1977) vom: Aug., Seite 1614-1624 volume:12 year:1977 month:08 pages:1614-1624 extent:11 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| isfreeaccess_bool |
false |
| container_title |
Journal of materials science |
| authorswithroles_txt_mv |
Kshirsagar, S. T. @@oth@@ Sinha, A. P. B. @@oth@@ |
| publishDateDaySort_date |
1977-08-01T00:00:00Z |
| hierarchy_top_id |
NLEJ188987134 |
| id |
NLEJ194541797 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ194541797</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707232230.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070526s1977 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ194541797</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1977</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">11</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Springer Online Journal Archives 1860-2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kshirsagar, S. T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sinha, A. P. B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">1966</subfield><subfield code="g">12(1977) vom: Aug., Seite 1614-1624</subfield><subfield code="w">(DE-627)NLEJ188987134</subfield><subfield code="w">(DE-600)2015305-3</subfield><subfield code="x">1573-4803</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:12</subfield><subfield code="g">year:1977</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1614-1624</subfield><subfield code="g">extent:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1007/BF00542812</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SOJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">12</subfield><subfield code="j">1977</subfield><subfield code="c">8</subfield><subfield code="h">1614-1624</subfield><subfield code="g">11</subfield></datafield></record></collection>
|
| series2 |
Springer Online Journal Archives 1860-2002 |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)NLEJ188987134 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| collection |
NL |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1573-4803 |
| topic_title |
Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
s t k st stk a p b s apb apbs |
| hierarchy_parent_title |
Journal of materials science |
| hierarchy_parent_id |
NLEJ188987134 |
| hierarchy_top_title |
Journal of materials science |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)NLEJ188987134 (DE-600)2015305-3 |
| title |
Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| spellingShingle |
Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| ctrlnum |
(DE-627)NLEJ194541797 |
| title_full |
Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| journal |
Journal of materials science |
| journalStr |
Journal of materials science |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1977 |
| contenttype_str_mv |
zzz |
| container_start_page |
1614 |
| container_volume |
12 |
| physical |
11 |
| format_se |
Elektronische Aufsätze |
| title_sort |
optical absorption, electrical conductivity and spectral response measurements on the system cdga2s4(1−x)se4x |
| title_auth |
Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| abstract |
Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. |
| abstractGer |
Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. |
| abstract_unstemmed |
Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In. |
| collection_details |
GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE |
| title_short |
Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x |
| url |
http://dx.doi.org/10.1007/BF00542812 |
| remote_bool |
true |
| author2 |
Kshirsagar, S. T. Sinha, A. P. B. |
| author2Str |
Kshirsagar, S. T. Sinha, A. P. B. |
| ppnlink |
NLEJ188987134 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth |
| up_date |
2024-07-06T01:02:49.759Z |
| _version_ |
1803789553903861760 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ194541797</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210707232230.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070526s1977 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ194541797</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Optical absorption, electrical conductivity and spectral response measurements on the system CdGa2S4(1−x)Se4x</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1977</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">11</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The compounds CdGa2S4 and CdGa2Se4 belong to the defect chalcopyrite (space group 1 ¯4) family. A series of compounds CdGa2S4(1−xSe4x has been prepared and their single crystals grown by the chemical transport reaction method. Optical absorption, spectral response, electrical conductivity and thermoelectric power measurements have been made. The optical absorption spectra revealed that the fundamental absorption edge varies with composition, from 2.2 to 3.25 eV. The plots (αħw)2 versus ħw revealed that these compounds are direct band gap materials, but plots of (αħw)1/2 versus ħw did not give convincing support to the presence of indirect transitions. The values of energy gaps were also deduced from spectral response (λmax) measurements and found to be in agreement with those deduced from optical absorption measurements. D.c. resistivity versus temperature studies revealed that, in spite of their large band gaps, these compounds exhibit intrinsic semiconduction above 250° C. The energy gap values matched with those obtained from other measurements. All samples were n-type and had a constant thermoelectric power ≈ 300 μV° C−1 in the temperature range 250 to 350° C. However, the thermal dependence of electrical conductivity and thermoelectric power indicated strong irreversibility with the thermal heating and cooling cycle. Such behaviour has been attributed to the diffusion of contact materials such Ga and In.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Springer Online Journal Archives 1860-2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kshirsagar, S. T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sinha, A. P. B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">1966</subfield><subfield code="g">12(1977) vom: Aug., Seite 1614-1624</subfield><subfield code="w">(DE-627)NLEJ188987134</subfield><subfield code="w">(DE-600)2015305-3</subfield><subfield code="x">1573-4803</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:12</subfield><subfield code="g">year:1977</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:1614-1624</subfield><subfield code="g">extent:11</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1007/BF00542812</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SOJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">12</subfield><subfield code="j">1977</subfield><subfield code="c">8</subfield><subfield code="h">1614-1624</subfield><subfield code="g">11</subfield></datafield></record></collection>
|
| score |
7.399907 |