A silicon composite thermal and ionization X-ray detector
Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon...
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1993 |
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| Umfang: |
6 |
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| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
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| Übergeordnetes Werk: |
in: Journal of low temperature physics - 1969, 93(1993) vom: März/Apr., Seite 411-416 |
| Übergeordnetes Werk: |
volume:93 ; year:1993 ; month:03/04 ; pages:411-416 ; extent:6 |
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NLEJ197752624 |
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| 520 | |a Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. | ||
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| 700 | 1 | |a Stahle, C. K. |4 oth | |
| 700 | 1 | |a Wouters, J. |4 oth | |
| 700 | 1 | |a Kelley, R. L. |4 oth | |
| 700 | 1 | |a Moseley, S. H. |4 oth | |
| 700 | 1 | |a Szymkowiak, A. E. |4 oth | |
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(DE-627)NLEJ197752624 DE-627 ger DE-627 rakwb eng A silicon composite thermal and ionization X-ray detector 1993 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Springer Online Journal Archives 1860-2002 Stahle, C. K. oth Wouters, J. oth Kelley, R. L. oth Moseley, S. H. oth Szymkowiak, A. E. oth in Journal of low temperature physics 1969 93(1993) vom: März/Apr., Seite 411-416 (DE-627)NLEJ188996001 (DE-600)2016984-X 1573-7357 nnns volume:93 year:1993 month:03/04 pages:411-416 extent:6 http://dx.doi.org/10.1007/BF00693453 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 93 1993 3/4 411-416 6 |
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(DE-627)NLEJ197752624 DE-627 ger DE-627 rakwb eng A silicon composite thermal and ionization X-ray detector 1993 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Springer Online Journal Archives 1860-2002 Stahle, C. K. oth Wouters, J. oth Kelley, R. L. oth Moseley, S. H. oth Szymkowiak, A. E. oth in Journal of low temperature physics 1969 93(1993) vom: März/Apr., Seite 411-416 (DE-627)NLEJ188996001 (DE-600)2016984-X 1573-7357 nnns volume:93 year:1993 month:03/04 pages:411-416 extent:6 http://dx.doi.org/10.1007/BF00693453 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 93 1993 3/4 411-416 6 |
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(DE-627)NLEJ197752624 DE-627 ger DE-627 rakwb eng A silicon composite thermal and ionization X-ray detector 1993 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Springer Online Journal Archives 1860-2002 Stahle, C. K. oth Wouters, J. oth Kelley, R. L. oth Moseley, S. H. oth Szymkowiak, A. E. oth in Journal of low temperature physics 1969 93(1993) vom: März/Apr., Seite 411-416 (DE-627)NLEJ188996001 (DE-600)2016984-X 1573-7357 nnns volume:93 year:1993 month:03/04 pages:411-416 extent:6 http://dx.doi.org/10.1007/BF00693453 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 93 1993 3/4 411-416 6 |
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(DE-627)NLEJ197752624 DE-627 ger DE-627 rakwb eng A silicon composite thermal and ionization X-ray detector 1993 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Springer Online Journal Archives 1860-2002 Stahle, C. K. oth Wouters, J. oth Kelley, R. L. oth Moseley, S. H. oth Szymkowiak, A. E. oth in Journal of low temperature physics 1969 93(1993) vom: März/Apr., Seite 411-416 (DE-627)NLEJ188996001 (DE-600)2016984-X 1573-7357 nnns volume:93 year:1993 month:03/04 pages:411-416 extent:6 http://dx.doi.org/10.1007/BF00693453 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 93 1993 3/4 411-416 6 |
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(DE-627)NLEJ197752624 DE-627 ger DE-627 rakwb eng A silicon composite thermal and ionization X-ray detector 1993 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. Springer Online Journal Archives 1860-2002 Stahle, C. K. oth Wouters, J. oth Kelley, R. L. oth Moseley, S. H. oth Szymkowiak, A. E. oth in Journal of low temperature physics 1969 93(1993) vom: März/Apr., Seite 411-416 (DE-627)NLEJ188996001 (DE-600)2016984-X 1573-7357 nnns volume:93 year:1993 month:03/04 pages:411-416 extent:6 http://dx.doi.org/10.1007/BF00693453 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 93 1993 3/4 411-416 6 |
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A silicon composite thermal and ionization X-ray detector |
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Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. |
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Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. |
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Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ197752624</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20210705223756.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070527s1993 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ197752624</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">A silicon composite thermal and ionization X-ray detector</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">6</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have made a combination calorimetric and ionization X-ray detector by attaching a silicon p-i-n diode to a monolithic silicon microcalorimeter. Applying a bias to the diode enhanced the thermal signal, and with a reverse bias of 25 V we achieved a detection threshold of 8 eV, based upon energy scaling of the standard deviation of the baseline noise. We were able to measure a charge signal in the absence of applied bias on the diode, demonstrating that the junction potential is sufficient to drift the ionized charges to the contacts. A fraction of the electron-hole pairs created became trapped, manifested by excess broadening in the measured thermal signal and by using the variation of the thermal signal magnitude with reverse bias to fit for the fraction of charge that is trapped. The ability to collect charge without an applied bias is necessary to produce high resolution combination thermal and ionization detectors.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Springer Online Journal Archives 1860-2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stahle, C. K.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wouters, J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kelley, R. L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Moseley, S. H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Szymkowiak, A. E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Journal of low temperature physics</subfield><subfield code="d">1969</subfield><subfield code="g">93(1993) vom: März/Apr., Seite 411-416</subfield><subfield code="w">(DE-627)NLEJ188996001</subfield><subfield code="w">(DE-600)2016984-X</subfield><subfield code="x">1573-7357</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:93</subfield><subfield code="g">year:1993</subfield><subfield code="g">month:03/04</subfield><subfield code="g">pages:411-416</subfield><subfield code="g">extent:6</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1007/BF00693453</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SOJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">93</subfield><subfield code="j">1993</subfield><subfield code="c">3/4</subfield><subfield code="h">411-416</subfield><subfield code="g">6</subfield></datafield></record></collection>
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