Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation
Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a qu...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
1983 |
|---|
| Umfang: |
14 |
|---|
| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
|---|---|
| Übergeordnetes Werk: |
in: Plasma chemistry and plasma processing - 1981, 3(1983) vom: Feb., Seite 235-248 |
| Übergeordnetes Werk: |
volume:3 ; year:1983 ; month:02 ; pages:235-248 ; extent:14 |
| Links: |
|---|
| Katalog-ID: |
NLEJ198381379 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | NLEJ198381379 | ||
| 003 | DE-627 | ||
| 005 | 20230505195937.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 070527s1983 xx |||||o 00| ||eng c | ||
| 035 | |a (DE-627)NLEJ198381379 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 245 | 1 | 0 | |a Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| 264 | 1 | |c 1983 | |
| 300 | |a 14 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. | ||
| 533 | |f Springer Online Journal Archives 1860-2002 | ||
| 700 | 1 | |a Manory, R. |4 oth | |
| 700 | 1 | |a Grill, A. |4 oth | |
| 700 | 1 | |a Carmi, U. |4 oth | |
| 700 | 1 | |a Avni, R. |4 oth | |
| 773 | 0 | 8 | |i in |t Plasma chemistry and plasma processing |d 1981 |g 3(1983) vom: Feb., Seite 235-248 |w (DE-627)NLEJ188987355 |w (DE-600)2018594-7 |x 1572-8986 |7 nnns |
| 773 | 1 | 8 | |g volume:3 |g year:1983 |g month:02 |g pages:235-248 |g extent:14 |
| 856 | 4 | 0 | |u http://dx.doi.org/10.1007/BF00566022 |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a ZDB-1-SOJ | ||
| 912 | |a GBV_NL_ARTICLE | ||
| 951 | |a AR | ||
| 952 | |d 3 |j 1983 |c 2 |h 235-248 |g 14 | ||
| matchkey_str |
article:15728986:1983----::eopstoadoyeiainfiiottahoienmcoaelsams |
|---|---|
| hierarchy_sort_str |
1983 |
| publishDate |
1983 |
| allfields |
(DE-627)NLEJ198381379 DE-627 ger DE-627 rakwb eng Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation 1983 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. Springer Online Journal Archives 1860-2002 Manory, R. oth Grill, A. oth Carmi, U. oth Avni, R. oth in Plasma chemistry and plasma processing 1981 3(1983) vom: Feb., Seite 235-248 (DE-627)NLEJ188987355 (DE-600)2018594-7 1572-8986 nnns volume:3 year:1983 month:02 pages:235-248 extent:14 http://dx.doi.org/10.1007/BF00566022 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 3 1983 2 235-248 14 |
| spelling |
(DE-627)NLEJ198381379 DE-627 ger DE-627 rakwb eng Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation 1983 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. Springer Online Journal Archives 1860-2002 Manory, R. oth Grill, A. oth Carmi, U. oth Avni, R. oth in Plasma chemistry and plasma processing 1981 3(1983) vom: Feb., Seite 235-248 (DE-627)NLEJ188987355 (DE-600)2018594-7 1572-8986 nnns volume:3 year:1983 month:02 pages:235-248 extent:14 http://dx.doi.org/10.1007/BF00566022 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 3 1983 2 235-248 14 |
| allfields_unstemmed |
(DE-627)NLEJ198381379 DE-627 ger DE-627 rakwb eng Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation 1983 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. Springer Online Journal Archives 1860-2002 Manory, R. oth Grill, A. oth Carmi, U. oth Avni, R. oth in Plasma chemistry and plasma processing 1981 3(1983) vom: Feb., Seite 235-248 (DE-627)NLEJ188987355 (DE-600)2018594-7 1572-8986 nnns volume:3 year:1983 month:02 pages:235-248 extent:14 http://dx.doi.org/10.1007/BF00566022 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 3 1983 2 235-248 14 |
| allfieldsGer |
(DE-627)NLEJ198381379 DE-627 ger DE-627 rakwb eng Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation 1983 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. Springer Online Journal Archives 1860-2002 Manory, R. oth Grill, A. oth Carmi, U. oth Avni, R. oth in Plasma chemistry and plasma processing 1981 3(1983) vom: Feb., Seite 235-248 (DE-627)NLEJ188987355 (DE-600)2018594-7 1572-8986 nnns volume:3 year:1983 month:02 pages:235-248 extent:14 http://dx.doi.org/10.1007/BF00566022 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 3 1983 2 235-248 14 |
| allfieldsSound |
(DE-627)NLEJ198381379 DE-627 ger DE-627 rakwb eng Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation 1983 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. Springer Online Journal Archives 1860-2002 Manory, R. oth Grill, A. oth Carmi, U. oth Avni, R. oth in Plasma chemistry and plasma processing 1981 3(1983) vom: Feb., Seite 235-248 (DE-627)NLEJ188987355 (DE-600)2018594-7 1572-8986 nnns volume:3 year:1983 month:02 pages:235-248 extent:14 http://dx.doi.org/10.1007/BF00566022 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 3 1983 2 235-248 14 |
| language |
English |
| source |
in Plasma chemistry and plasma processing 3(1983) vom: Feb., Seite 235-248 volume:3 year:1983 month:02 pages:235-248 extent:14 |
| sourceStr |
in Plasma chemistry and plasma processing 3(1983) vom: Feb., Seite 235-248 volume:3 year:1983 month:02 pages:235-248 extent:14 |
| format_phy_str_mv |
Article |
| institution |
findex.gbv.de |
| isfreeaccess_bool |
false |
| container_title |
Plasma chemistry and plasma processing |
| authorswithroles_txt_mv |
Manory, R. @@oth@@ Grill, A. @@oth@@ Carmi, U. @@oth@@ Avni, R. @@oth@@ |
| publishDateDaySort_date |
1983-02-01T00:00:00Z |
| hierarchy_top_id |
NLEJ188987355 |
| id |
NLEJ198381379 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ198381379</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230505195937.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070527s1983 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ198381379</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1983</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">14</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Springer Online Journal Archives 1860-2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Manory, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grill, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carmi, U.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Avni, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Plasma chemistry and plasma processing</subfield><subfield code="d">1981</subfield><subfield code="g">3(1983) vom: Feb., Seite 235-248</subfield><subfield code="w">(DE-627)NLEJ188987355</subfield><subfield code="w">(DE-600)2018594-7</subfield><subfield code="x">1572-8986</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:3</subfield><subfield code="g">year:1983</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:235-248</subfield><subfield code="g">extent:14</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1007/BF00566022</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SOJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">3</subfield><subfield code="j">1983</subfield><subfield code="c">2</subfield><subfield code="h">235-248</subfield><subfield code="g">14</subfield></datafield></record></collection>
|
| series2 |
Springer Online Journal Archives 1860-2002 |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)NLEJ188987355 |
| format |
electronic Article |
| delete_txt_mv |
keep |
| collection |
NL |
| remote_str |
true |
| illustrated |
Not Illustrated |
| issn |
1572-8986 |
| topic_title |
Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
r m rm a g ag u c uc r a ra |
| hierarchy_parent_title |
Plasma chemistry and plasma processing |
| hierarchy_parent_id |
NLEJ188987355 |
| hierarchy_top_title |
Plasma chemistry and plasma processing |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)NLEJ188987355 (DE-600)2018594-7 |
| title |
Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| spellingShingle |
Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| ctrlnum |
(DE-627)NLEJ198381379 |
| title_full |
Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| journal |
Plasma chemistry and plasma processing |
| journalStr |
Plasma chemistry and plasma processing |
| lang_code |
eng |
| isOA_bool |
false |
| recordtype |
marc |
| publishDateSort |
1983 |
| contenttype_str_mv |
zzz |
| container_start_page |
235 |
| container_volume |
3 |
| physical |
14 |
| format_se |
Elektronische Aufsätze |
| title_sort |
decomposition and polymerization of silicon tetrachloride in a microwave plasma. a mass-spectrometry investigation |
| title_auth |
Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| abstract |
Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. |
| abstractGer |
Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. |
| abstract_unstemmed |
Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate. |
| collection_details |
GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE |
| title_short |
Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation |
| url |
http://dx.doi.org/10.1007/BF00566022 |
| remote_bool |
true |
| author2 |
Manory, R. Grill, A. Carmi, U. Avni, R. |
| author2Str |
Manory, R. Grill, A. Carmi, U. Avni, R. |
| ppnlink |
NLEJ188987355 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth |
| up_date |
2024-07-06T11:09:37.381Z |
| _version_ |
1803827730062508032 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">NLEJ198381379</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230505195937.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">070527s1983 xx |||||o 00| ||eng c</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)NLEJ198381379</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Decomposition and polymerization of silicon tetrachloride in a microwave plasma. A mass-spectrometry investigation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1983</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">14</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Mass spectrometry has been used to analyze microwave-induced plasmas of silicon tetrachloride diluted in mixtures of hydrogen and argon. The effects of process parameters such as pressure in the reactor, power input, and the composition of the gas mixture were investigated. Sampling by a quadrupole mass-spectrometer along the gas stream showed that the reactions were initiated upstream where the reactants enter the plasma. It was found that the input power had an optimal value for the decomposition rate of SiCl4; above that optimum, recombination occurred downstream. Upstream the concentrations of SiCl4 decrease with increasing pressure in the range 1–10 torr, independent of the input power. The effect of admixing argon to the reaction mixture is discussed, and the results obtained are correlated to experimental results reported in previous works concerning silicon deposition from SiCl4 on a grounded substrate.</subfield></datafield><datafield tag="533" ind1=" " ind2=" "><subfield code="f">Springer Online Journal Archives 1860-2002</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Manory, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Grill, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Carmi, U.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Avni, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">in</subfield><subfield code="t">Plasma chemistry and plasma processing</subfield><subfield code="d">1981</subfield><subfield code="g">3(1983) vom: Feb., Seite 235-248</subfield><subfield code="w">(DE-627)NLEJ188987355</subfield><subfield code="w">(DE-600)2018594-7</subfield><subfield code="x">1572-8986</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:3</subfield><subfield code="g">year:1983</subfield><subfield code="g">month:02</subfield><subfield code="g">pages:235-248</subfield><subfield code="g">extent:14</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://dx.doi.org/10.1007/BF00566022</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-1-SOJ</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_NL_ARTICLE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">3</subfield><subfield code="j">1983</subfield><subfield code="c">2</subfield><subfield code="h">235-248</subfield><subfield code="g">14</subfield></datafield></record></collection>
|
| score |
7.3987617 |