Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals
Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic lumine...
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| Autor*in: |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1998 |
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| Umfang: |
4 |
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| Reproduktion: |
Springer Online Journal Archives 1860-2002 |
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| Übergeordnetes Werk: |
in: Semiconductors - 1997, 32(1998) vom: Mai, Seite 509-512 |
| Übergeordnetes Werk: |
volume:32 ; year:1998 ; month:05 ; pages:509-512 ; extent:4 |
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| 245 | 1 | 0 | |a Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals |
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| 520 | |a Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. | ||
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| 700 | 1 | |a Vorobkalo, F. M. |4 oth | |
| 700 | 1 | |a Glinchuk, K. D. |4 oth | |
| 700 | 1 | |a Prokhorovich, A. V. |4 oth | |
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(DE-627)NLEJ198783760 DE-627 ger DE-627 rakwb eng Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals 1998 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. Springer Online Journal Archives 1860-2002 Vorobkalo, F. M. oth Glinchuk, K. D. oth Prokhorovich, A. V. oth in Semiconductors 1997 32(1998) vom: Mai, Seite 509-512 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:32 year:1998 month:05 pages:509-512 extent:4 http://dx.doi.org/10.1134/1.1187429 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 32 1998 5 509-512 4 |
| spelling |
(DE-627)NLEJ198783760 DE-627 ger DE-627 rakwb eng Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals 1998 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. Springer Online Journal Archives 1860-2002 Vorobkalo, F. M. oth Glinchuk, K. D. oth Prokhorovich, A. V. oth in Semiconductors 1997 32(1998) vom: Mai, Seite 509-512 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:32 year:1998 month:05 pages:509-512 extent:4 http://dx.doi.org/10.1134/1.1187429 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 32 1998 5 509-512 4 |
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(DE-627)NLEJ198783760 DE-627 ger DE-627 rakwb eng Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals 1998 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. Springer Online Journal Archives 1860-2002 Vorobkalo, F. M. oth Glinchuk, K. D. oth Prokhorovich, A. V. oth in Semiconductors 1997 32(1998) vom: Mai, Seite 509-512 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:32 year:1998 month:05 pages:509-512 extent:4 http://dx.doi.org/10.1134/1.1187429 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 32 1998 5 509-512 4 |
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(DE-627)NLEJ198783760 DE-627 ger DE-627 rakwb eng Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals 1998 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. Springer Online Journal Archives 1860-2002 Vorobkalo, F. M. oth Glinchuk, K. D. oth Prokhorovich, A. V. oth in Semiconductors 1997 32(1998) vom: Mai, Seite 509-512 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:32 year:1998 month:05 pages:509-512 extent:4 http://dx.doi.org/10.1134/1.1187429 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 32 1998 5 509-512 4 |
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(DE-627)NLEJ198783760 DE-627 ger DE-627 rakwb eng Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals 1998 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. Springer Online Journal Archives 1860-2002 Vorobkalo, F. M. oth Glinchuk, K. D. oth Prokhorovich, A. V. oth in Semiconductors 1997 32(1998) vom: Mai, Seite 509-512 (DE-627)NLEJ188985646 (DE-600)1473824-7 1063-7826 nnns volume:32 year:1998 month:05 pages:509-512 extent:4 http://dx.doi.org/10.1134/1.1187429 GBV_USEFLAG_U ZDB-1-SOJ GBV_NL_ARTICLE AR 32 1998 5 509-512 4 |
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analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals |
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Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals |
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Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. |
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Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. |
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Abstract The effect of copper diffusion into semi-insulating undoped GaAs crystals on the intensity of intrinsic luminescence is analyzed. It is shown that diffusion of copper into semi-insulating undoped GaAs crystals can lead either to an increase or a decrease in the intensity of intrinsic luminescence. Analytic relations, which connect the magnitude and sign of the effect with recombination parameters in these crystals, and also with the intensity of the excitation luminescence, are obtained. |
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Analysis of changes in the intensity of intrinsic luminescence after diffusion of copper into semi-insulating undoped gallium arsenide crystals |
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